Vishay IRFPS40N50L, SiHFPS40N50L Data Sheet
IRFPS40N50L, SiHFPS40N50L
Available
RoHS*
COMPLIANT
Power MOSFET
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 500
R
()V
DS(on)
Q
(Max.) (nC) 380
g
Q
(nC) 80
gs
Q
(nC) 190
gd
= 10 V 0.087
GS
Configuration Single
Super-247
G
S
D
G
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Superfast Body Diode Eliminates the Need for
External Diodes in ZVS Applications
• Lower Gate Charge Results in Simpler Drive
Requirements
• Enhanced dV/dt Capabilities Offer Improved Ruggedness
• Higher Gate Voltage Threshold Offers Improved Noise
D
Immunity
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Zero Voltage Switching SMPS
• Telecom and Server Power Supplies
S
• Uninterruptible Power Supplies
• Motor Control Applications
Super-247
IRFPS40N50LPbF
SiHFPS40N50L-E3
IRFPS40N50L
SiHFPS40N50L
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
a
at 10 V
GS
C
= 100 °C 29
C
DS
± 30
GS
I
D
IDM 180
Linear Derating Factor 4.3 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
b
a
a
= 25 °C P
c
C
Operating Junction and Storage Temperature Range T
E
AS
I
AR
E
AR
D
dV/dt 34 V/ns
, T
J
stg
Soldering Recommendations (Peak Temperature) for 10 s 300
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
SD
d. 1.6 mm from case.
= 25 °C, L = 0.86 mH, Rg = 25 , IAS = 46 A (see fig. 12).
J
46 A, dI/dt 550 A/μs, VDD VDS, TJ 150 °C.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91260 www.vishay.com
S11-0111-Rev. C, 07-Feb-11 1
500
46
920 mJ
46 A
54 mJ
540 W
- 55 to + 150
d
V
AT
°C
IRFPS40N50L, SiHFPS40N50L
S
D
G
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
Note
a. Rth is measured at TJ approximately 90 °C.
a
a
R
R
R
thJA
thCS
thJC
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
V
Temperature Coefficient
DS
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Effective Output Capacitance
(Energy Related)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Internal Gate Resistance R
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Reverse Recovery Current I
Forward Turn-On Time t
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 400 μs; duty cycle 2 %.
c. C
eff. is a fixed capacitance that gives the same charging time as C
oss
C
eff. (ER) is a fixed capacitance that stores the same energy as C
oss
www.vishay.com Document Number: 91260
2 S11-0111-Rev. C, 07-Feb-11
V
DS
V
DS/TJ
V
GS(th)
V
I
GSS
I
C
oss eff.
DSS
VGS = 10 V ID = 28 A
R
DS(on)
g
fs
C
iss
C
oss
C
rss
C
oss
C
eff.
oss
(ER)
Q
g
Q
gs
Q
gd
G
t
d(on)
t
r
t
d(off)
t
f
S
I
SM
SD
rr
rr
RRM
on
V
V
GS
V
GS
MOSFET symbol
showing the
integral reverse
p - n junction diode
-40
0.24 -
°C/W
-0.23
VGS = 0 V, ID = 250 μA
Reference to 25 °C, I
= 1 mA
D
VDS = VGS, ID = 250 μA
= ± 30 V - - ± 100 nA
GS
VDS = 500 V, VGS = 0 V
= 400 V, VGS = 0 V, TJ = 125 °C
DS
b
500 - -
-0.60-
3.0 -
--
--
- 0.087 0.100
VDS = 50 V, ID = 46 A 21 - - S
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
= 1.0 V , f = 1.0 MHz
V
DS
V
= 400 V , f = 1.0 MHz
DS
= 0 V
V
= 0 V to 400 V
DS
c
- 8110 -
- 960 -
- 130 -
- 11200 -
- 240 -
- 440 -
- 310 -
--
= 10 V
D
see fig. 7 and 15
b
--
--
= 46 A, VDS = 400 V,
I
f = 1 MHz, open drain - 0.90 -
-27-
V
= 250 V, ID = 46 A,
DD
R
= 0.85 , VGS = 10 V,
G
see fig. 14a and 14b
b
- 170 -
-50-
-69-
--46
- - 180
TJ = 25 °C, IS = 46 A, VGS = 0 V
b
--1.5V
TJ = 25 °C, IF = 46 A - 170 250
= 125 °C, dI/dt = 100 A/μs
T
J
TJ = 25 °C, IS = 46 A, VGS = 0 V
= 125 °C, dI/dt = 100 A/μs
T
J
b
b
b
- 220 330
- 705 1060
-1.32.0
TJ = 25 °C - 9.0 - A
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
while VDS is rising from 0 % to 80 % VDS.
oss
while VDS is rising from 0 % to 80 % VDS.
oss
V/°C
5.0
50
μA
2.0 mA
pF
380
80
nC
190
nC
V
V
ns
A
ns
IRFPS40N50L, SiHFPS40N50L
0.01
0.1
1
10
100
1000
0.1 1 10 100
20μs PULSE W IDTH
T = 25 C
J
°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
0.1
1
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 150 C
J
°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
0.1
1
10
100
1000
4 5 6 7 8 9 10 11
V = 50V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
°
T = 150 C
J
°
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
47A
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Document Number: 91260 www.vishay.com
S11-0111-Rev. C, 07-Feb-11 3
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
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