Vishay IRFPS37N50A, SiHFPS37N50A Data Sheet

IRFPS37N50A, SiHFPS37N50A

S

D

G

Super-247

Available

RoHS*

COMPLIANT

Power MOSFET

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 500

R

(Max.) ()V

DS(on)

Q

(Max.) (nC) 180

g

Q

(nC) 46

gs

Q

(nC) 71

gd

= 10 V 0.13

GS

Configuration Single

G

N-Channel MOSFET

ORDERING INFORMATION

Package

Lead (Pb)-free

SnPb

FEATURES

• Low Gate Charge Qg Results in Simple Drive Requirement

• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

• Fully Characterized Capacitance and Avalanche Voltage and Current

D

• Effective C

Specified

oss

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supply

• High Speed Power Switching

S

TYPICAL SMPS TOPOLOGIES

• Full Bridge Converters

• Power Factor Correction Boost

Super-247 IRFPS37N50APbF SiHFPS37N50A-E3 IRFPS37N50A SiHFPS37N50A

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

= 25 °C

T

Continuous Drain Current V

Pulsed Drain Current

a

at 10 V

GS

C

= 100 °C 23

T

C

DS

± 30

GS

I

D

IDM 144

Linear Derating Factor 3.6 W/°C

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation T

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range T

b

a

= 25 °C P

c

C

E

AS

I

AR

E

AR

D

dV/dt 3.5 V/ns

, T

J

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting T c. I

SD

= 25 °C, L = 1.94 mH, Rg = 25 , IAS = 36 A (see fig. 12).

J

 36 A, dI/dt  145 A/μs, VDD  VDS, TJ  150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91258 www.vishay.com S11-0111-Rev. C, 07-Feb-11 1

500

36

1260 mJ

36 A

44 mJ

446 W

- 55 to + 150

d

V

A

°C

IRFPS37N50A, SiHFPS37N50A

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Output Capacitance C

Effective Output Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %. c. C

eff. is a fixed capacitance that gives the same charging time as C

oss

DS

GS(th)

V

GSS

DSS

VGS = 10 V ID = 22 A

DS(on)

fs

iss

- 810 -

oss

-36-

rss

oss

eff. VDS = 0 V to 400 V - 400 -

oss

g

--46

gs

--71

gd

d(on)

r

-52-

d(off)

-80-

f

S

I

SM

SD

rr

on

V

GS

V

GS

MOSFET symbol showing the

integral reverse p - n junction diode

TJ = 25 °C, IF = 36 A, dI/dt = 100 A/μs

-40

0.24 -

°C/WCase-to-Sink, Flat, Greased Surface R

-0.28

VGS = 0 V, ID = 250 μA 500 - - V

VDS = VGS, ID = 250 μA 2.0 - 4.0 V

= ± 30 V - - ± 100 nA

GS

VDS = 500 V, VGS = 0 V - - 25

= 400 V, VGS = 0 V, TJ = 150 °C - - 250

DS

VDS = 50 V, ID = 22 A

VGS = 0 V,

V

= 25 V,

DS

f = 1.0 MHz, see fig. 5

= 1.0 V , f = 1.0 MHz - 7905 -

V

DS

= 0 V

V

= 400 V , f = 1.0 MHz - 221 -

DS

b

- - 0.13 

20 - - S

- 5579 -

- - 180

= 36 A, VDS = 400 V,

I

= 10 V

D

see fig. 6 and 13

b

-23-

V

= 250 V, ID = 36 A,

DD

R

= 2.15 , RD = 7.0

G

see fig. 10

b

G

TJ = 25 °C, IS = 36 A, VGS = 0 V

D

S

b

-98-

--36

- - 144

--1.5V

- 570 860 ns

b

- 8.6 13 μC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

while VDS is rising from 0 % to 80 % VDS.

oss

μA

pF

nC Gate-Source Charge Q

ns

A

www.vishay.com Document Number: 91258 2 S11-0111-Rev. C, 07-Feb-11

IRFPS37N50A, SiHFPS37N50A

0.1

1

10

100

1000

0.1 1 10 100

20µs PULSE WIDTH T = 25 C

J

°

TOP

BOTTOM

VGS 15V 10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

DS

D

4.5V

1

10

100

0.1 1 10 100

20µs PULSE WIDTH T = 150 C

J

°

TOP

BOTTOM

VGS 15V 10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

DS

D

4.5V

1

10

100

1000

4.0 5.0 6.0 7.0 8.0 9.0

V = 50V 20µs PULSE WIDT H

DS

V , Gate-to-Source Voltage (V)

I , Drain-to-Source Current (A)

GS

D

T = 25 C

J

°

T = 150 C

J

°

-60 -40 -20 0 20 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

3.0

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

J

DS(on)

°

V =

I =

GS

D

10V

36A

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Vishay Siliconix

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Output Characteristics

Document Number: 91258 www.vishay.com S11-0111-Rev. C, 07-Feb-11 3

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature