Vishay IRFP460A, SiHFP460A Data Sheet

Power MOSFET

IRFP460A, SiHFP460A

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 500

R

(Ω)V

DS(on)

Q

(Max.) (nC) 105

g

Q

(nC) 26

gs

Q

(nC) 42

gd

Configuration Single

TO-247

= 10 V 0.27

GS

D

FEATURES

• Low Gate Charge Qg Results in Simple Drive
Requirement

• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness

• Fully Characterized Capacitance and Avalanche Voltage
and Current

• Effective C

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptable Power Supply

G

S

D

G

N-Channel MOSFET

S

• High Speed Power Switching

TYPICAL SMPS TOPOLOGIES

• Full Bridge

• PFC Boost

ORDERING INFORMATION

Package TO-247

Lead (Pb)-free

SnPb

IRFP460APbF
SiHFP460A-E3
IRFP460A
SiHFP460A

Specified

oss

Available

RoHS*

COMPLIANT

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

a

at 10 V

GS

C

= 100 °C 13

C

DS

± 30

GS

I

D

IDM 80

Linear Derating Factor 2.2 W/°C

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation T

Peak Diode Recovery dV/dt

b

a

a

= 25 °C P

c

C

Operating Junction and Storage Temperature Range T

E

AS

I

AR

E

AR

D

dV/dt 3.8 V/ns

, T

J

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I

SD

= 25 °C, L = 4.3 mH, Rg = 25 Ω, IAS = 20 A (see fig. 12).

J

≤ 20 A, dI/dt ≤ 125 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91234 www.vishay.com
S09-1284-Rev. B, 13-Jul-09 1

500

20

960 mJ

20 A

28 mJ

280 W

- 55 to + 150

d

10 lbf · in

1.1 N · m

V

AT

°C

IRFP460A, SiHFP460A

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.61 -

V

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Output Capacitance C

Effective Output Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. C

eff. is a fixed capacitance that gives the same charging time as C

oss

DS

GS(th)

V

GSS

DSS

VGS = 10 V ID = 12 A

DS(on)

fs

iss

- 480 -

oss

-18-

rss

oss

eff. VDS = 0 V to 400 V

oss

g

--26

gs

--42

gd

d(on)

r

-45-

d(off)

-39-

f

S

I

SM

SD

rr

rr

on

V

V

GS

V

GS

R

MOSFET symbol
showing the

integral reverse
p - n junction diode

TJ = 25 °C, IF = 20 A, dI/dt = 100 A/µs

-40

0.24 -

°C/WCase-to-Sink, Flat, Greased Surface R

-0.45

VGS = 0 V, ID = 250 µA 500 - -

VDS = VGS, ID = 250 µA 2.0 - 4.0 V

= ± 30 V - - ± 100 nA

GS

VDS = 500 V, VGS = 0 V - - 25

= 400 V, VGS = 0 V, TJ = 125 °C - - 250

DS

VDS = 50 V, ID = 12 A

VGS = 0 V,

V

= 25 V,

DS

f = 1.0 MHz, see fig. 5

= 1.0 V, f = 1.0 MHz 4430

V

DS

= 0 V

V

= 400 V, f = 1.0 MHz 130

DS

b

b

c

--0.27Ω

11 - -

- 3100 -

140

- - 105

= 20 A, VDS = 400 V,

I

= 10 V

D

see fig. 6 and 13

b

-18-

V

= 250 V, ID = 20 A,

DD

= 4.3 Ω, RD = 13 Ω, see fig. 10

G

G

TJ = 25 °C, IS = 20A, VGS = 0 V

b

D

S

b

-55-

--20

--80

--1.8V

- 480 710 ns

b

-5.07.5µC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

while VDS is rising from 0 % to 80 % VDS.

oss

V

V/°C

µA

S

pF

nC Gate-Source Charge Q

ns

A

www.vishay.com Document Number: 91234
2 S09-1284-Rev. B, 13-Jul-09

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

IRFP460A, SiHFP460A

Vishay Siliconix

, Drain-to-Source Current (A)

D

I

91234_01

2

10

10

To p

Bottom

V

15 V

10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

GS

1

0.1

0.1

1

VDS, Drain-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics

2

10

10

To p

Bottom

V

15 V

10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

GS

4.5 V

20 µs Pulse Width
T

= 25 °C

C

10

2

10

150 °C

10

25 °C

1

, Drain-to-Source Current (A)

D

I

91234_03

0.1

5.0 6.0 7.0 8.0 9.04.0

V

Gate-to-Source Voltage (V)

,

GS

2

10

20 µs Pulse Width

= 50 V

V

DS

Fig. 3 - Typical Transfer Characteristics

3.0
I

= 20 A

D

V

= 10 V

GS

2.5

2.0

1.5

(Normalized)

1.0

0.5

, Drain-to-Source On Resistance

DS(on)

0.0

R

91234_04

- 60 - 40 - 20 0 20 40

T

Junction Temperature (°C)

,

J

60

80 100

120

Fig. 4 - Normalized On-Resistance vs. Temperature

140 160

, Drain-to-Source Current (A)

D

I

91234_02

20 µs Pulse Width

= 150 °C

T

1

1

V

Drain-to-Source Voltage (V)

,

DS

C

10 10

Fig. 2 - Typical Output Characteristics

4.5 V

2

Document Number: 91234 www.vishay.com
S09-1284-Rev. B, 13-Jul-09 3