Vishay IRFP450LC, SiHFP450LC Data Sheet
Power MOSFET
IRFP450LC, SiHFP450LC
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 500
R
(Ω)V
DS(on)
Q
(Max.) (nC) 74
g
Q
(nC) 19
gs
Q
(nC) 35
gd
Configuration Single
TO-247
= 10 V 0.40
GS
D
FEATURES
• Ultra Low Gate Charge
• Reduced Gate Drive Requirement
• Enhanced 30 V V
• Reduced C
• Isolated Central Mounting Hole
• Dynamic dV/dt Rated
• Repetitive Avalanche Rated
• Lead (Pb)-free Available
DESCRIPTION
This new series of low charge Power MOSFETs achieve
significantly lower gate charge over conventional MOSFETs.
G
Utilizing advanced Power MOSFET technology the device
improvements allow for reduced gate drive requirements,
faster switching speeds and increased total system savings.
S
D
G
N-Channel MOSFET
S
These device improvements combined with the proven
ruggedness and reliability of Power MOSFETs offer the
designer a new standard in power transistors for switching
applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mounting
hole.
ORDERING INFORMATION
Package TO-247
Lead (Pb)-free
SnPb
IRFP450LCPbF
SiHFP450LC-E3
IRFP450LC
SiHFP450LC
iss
, C
GS
oss
Rating
, C
rss
Available
RoHS*
COMPLIANT
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
a
at 10 V
GS
C
= 100 °C 8.6
C
DS
± 30
GS
I
D
IDM 56
Linear Derating Factor 1.5 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
b
a
a
= 25 °C P
c
C
Operating Junction and Storage Temperature Range T
E
AS
I
AR
E
AR
D
dV/dt 3.5 V/ns
, T
J
stg
Soldering Recommendations (Peak Temperature) for 10 s 300
Mounting Torque 6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
= 25 V, starting TJ = 25 °C, L = 7.0 mH, RG = 25 Ω, IAS = 14 A (see fig. 12).
b. V
DD
≤ 14 A, dI/dt ≤ 130 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
c. I
SD
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91231 www.vishay.com
S-81271-Rev. A, 16-Jun-08 1
500
14
760 mJ
14 A
19 mJ
190 W
- 55 to + 150
d
10 lbf · in
1.1 N · m
V
AT
°C
IRFP450LC, SiHFP450LC
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Maximum Junction-to-Case (Drain) R
thJA
thCS
thJC
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.59 -
V
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
Internal Source Inductance L
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
DS
GS(th)
V
GSS
DSS
V
DS(on)
fs
iss
- 320 -
oss
-28-
rss
g
--19
gs
--35
gd
d(on)
r
-30-
d(off)
-30-
f
D
V
V
R
Between lead,
6 mm (0.25") from
package and center of
S
S
die contact
MOSFET symbol
showing the
integral reverse
I
SM
SD
rr
rr
on
p - n junction diode
TJ = 25 °C, IF = 14 A, dI/dt = 100 A/µs
-40
0.24 -
°C/WCase-to-Sink, Flat, Greased Surface R
-0.65
VGS = 0 V, ID = 250 µA 500 - -
VDS = VGS, ID = 250 µA 2.0 - 4.0
= ± 20 V - - ± 100
GS
VDS = 500 V, VGS = 0 V - - 25
= 400 V, VGS = 0 V, TJ = 125 °C - - 250
DS
= 10 V ID = 8.4 A
GS
VDS = 50 V, ID = 8.4 A
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
b
b
--0.40
8.7 - -
- 2200 -
--74
= 14 A, VDS = 400 V,
I
= 10 V
GS
D
see fig. 6 and 13
b
-14-
V
= 250 V, ID = 14 A,
DD
= 6.2 Ω, RD = 17 Ω, see fig. 10
G
G
G
TJ = 25 °C, IS = 14 A, VGS = 0 V
b
D
S
D
S
b
-49-
-5.0-
-13-
--14
--56
--1.4V
- 580 870 ns
b
-5.17.7µC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
V
V/°C
V
nA
µA
Ω
S
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
nH
A
www.vishay.com Document Number: 91231
2 S-81271-Rev. A, 16-Jun-08
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
IRFP450LC, SiHFP450LC
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 2 - Typical Output Characteristics, T
= 150 °C
C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91231 www.vishay.com
S-81271-Rev. A, 16-Jun-08 3
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