Vishay IRFP31N50L, SiHFP31N50L Data Sheet

IRFP31N50L, SiHFP31N50L

N-Channel MOSFET

G

D

S

TO-247AC

G

D

S

Available

RoHS*

COMPLIANT

Power MOSFET

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 500

R

()V

DS(on)

Q

(Max.) (nC) 210

g

Q

(nC) 58

gs

Q

(nC) 100

gd

Configuration Single

= 10 V 0.15

GS

FEATURES

• Super Fast Body Diode Eliminates the Need for
External Diodes in ZVS Applications

• Lower Gate Charge Results in Simpler Drive
Requirements

• Enhanced dV/dt Capabilities Offer Improved Ruggedness

• Higher Gate Voltage Threshold Offers Improved Noise
Immunity

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Zero Voltage Switching SMPS

• Telecom and Server Power Supplies

• Uninterruptible Power Supplies

• Motor Control Applications

ORDERING INFORMATION

Package TO-247AC

Lead (Pb)-free

SnPb

IRFP31N50LPbF
SiHFP31N50L-E3
IRFP31N50L
SiHFP31N50L

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

= 25 °C

T

Continuous Drain Current V

Pulsed Drain Current

a

at 10 V

GS

C

= 100 °C 20

C

DS

± 30

GS

I

D

IDM 124

Linear Derating Factor 3.7 W/°C

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation T

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range T

b

a

a

= 25 °C P

c

C

E

AS

I

AR

E

AR

D

dV/dt 19 V/ns

, T

J

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I

SD

= 25 °C, L = 1 mH, Rg = 25 , IAS = 31 A (see fig. 12).

J

 31 A, dI/dt  422 A/μs, VDD  VDS, TJ  150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91220 www.vishay.com
S11-0488-Rev. C, 21-Mar-11 1

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

500

31

460 mJ

31 A

46 mJ

460 W

- 55 to + 150

d

10 lbf · in

1.1 N · m

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V

AT

°C

IRFP31N50L, SiHFP31N50L

S

D

G

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R
Case-to-Sink, Flat, Greased Surface R
Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.28 -

V

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Output Capacitance C

Effective Output Capacitance C

Effective Output Capacitance

Total Gate Charge Q

Gate-Source Charge Q

Gate-Drain Charge Q

Internal Gate Resistance R

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Reverse Recovery Current I

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. C

eff. is a fixed capacitance that gives the same charging time as C

oss

eff. (ER) is a fixed capacitance that stores the same energy as C

C

oss

www.vishay.com Document Number: 91220
2 S11-0488-Rev. C, 21-Mar-11

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

DS

GS(th)

V

GSS

DSS

VGS = 10 V ID = 19 A

DS(on)

fs

iss

- 553 -

oss

-59-

rss

oss

eff.

oss

C

oss eff. (ER)

g

gs

gd

g

d(on)

r

-54-

d(off)

-53-

f

S

V

V

GS

- 200 -

V

GS

MOSFET symbol
showing the
integral reverse

I

SM

SD

rr

RRM

on

rr

p - n junction diode

This datasheet is subject to change without notice.

-40

0.24 -

°C/W

-0.26

VGS = 0 V, ID = 250 μA 500 - -

VDS = VGS, ID = 250 μA 3.0 -

= ± 30 V - -

GS

VDS = 500 V, VGS = 0 V - -

= 400 V, VGS = 0 V, TJ = 125 °C - -

DS

VDS = 50 V, ID = 19 A

VGS = 0 V,

V

= 25 V,

DS

f = 1.0 MHz, see fig. 5

V

DS

V

= 0 V

DS

= 1.0 V , f = 1.0 MHz - 6630 -

= 400 V , f = 1.0 MHz - 155 -

= 0 V to 400 V

V

DS

b

b

-0.15

15 - -

- 5000 -

c

- 276 -

5.0 V

± 100 nA

50 μA

2.0 mA

0.18 

- - 210

= 31 A, VDS = 400 V,

I

= 10 V

D

see fig. 7 and 13

b

--58

- - 100

f = 1 MHz, open drain - 1.1 - 

-28-

V

= 250 V, ID = 31 A,

DD

R

= 4.3 , see fig. 10

g

b

- 115 -

--31

- - 124

TJ = 25 °C, IS = 31 A, VGS = 0 V

b

--1.5V

TJ = 25 °C, IF = 31 A - 170 250

= 125 °C, dI/dt = 100 A/μs

T

J

TJ = 25 °C, IS = 31 A, VGS = 0 V

= 125 °C, dI/dt = 100 A/μs

T

J

b

b

b

- 220 330

- 570 860

-1.21.8

TJ = 25 °C - 7.9 12 A

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

while VDS is rising from 0 % to 80 % VDS.

oss

while VDS is rising from 0 % to 80 % VDS.

oss

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V

V/°C

S

pF

nC

ns

A

ns

nC

μC

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

VDS, Drain-to-Source Voltage (V)

I

D

, Drain-to-Source Current (A)

0.1

1

10

100

0.01

0.1

1

10

100

100

VGS
15 V
12 V
10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

Top

Bottom

5.0 V

20 μs PULSE WIDTH
TJ = 25 °C

VDS, Drain-to-Source Voltage (V)

I

D

, Drain-to-Source Current (A)

0.1

1

10

100

0.01

0.1

1

10

100

VGS
15 V
12 V
10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

Top

Bottom

5.0 V

20 μs PULSE WIDTH
TJ = 150 °C

TJ, Junction Temperature

R

DS(on)

, Drain-to-Source On Resistance (Normalized)

- 60

- 20

- 40

0

20

40

60

80

100

120

140

160

0.0

0.5

1.0

1.5

2.0

2.5

3.0
ID = 31 A

VGS = 10 V

Fig. 1 - Typical Output Characteristics

IRFP31N50L, SiHFP31N50L

Vishay Siliconix

1000

100

TJ = 150 °C

10

TJ = 25 °C

, Drain-to-Source Current (A)

1

D

I

VDS = 50 V

0.1
54

6810

VGS, Gate-to-Source Voltage (V)

Fig. 3 - Typical Transfer Characteristics

20 μs PULSE WIDTH

7

911

Document Number: 91220 www.vishay.com
S11-0488-Rev. C, 21-Mar-11 3

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 2 - Typical Output Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

This datasheet is subject to change without notice.

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