Vishay IRFP27N60K, SiHFP27N60K Data Sheet
IRFP27N60K, SiHFP27N60K
TO-247AC
G
D
S
Power MOSFET
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 600
R
()V
DS(on)
Q
(Max.) (nC) 180
g
Q
(nC) 56
gs
Q
(nC) 86
gd
Configuration Single
= 10 V 0.18
GS
D
FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Enhanced Body Diode dV/dt Capability
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Hard Switching Primary or PFC Switch
G
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
S
N-Channel MOSFET
• High Speed Power Switching
• Motor Drive
ORDERING INFORMATION
Package TO-247AC
Lead (Pb)-free
SnPb
IRFP27N60KPbF
SiHFP27N60K-E3
IRFP27N60K
SiHFP27N60K
Available
RoHS*
COMPLIANT
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
= 25 °C
T
Continuous Drain Current V
Pulsed Drain Current
a
at 10 V
GS
C
= 100 °C 18
C
DS
± 30
GS
I
D
IDM 110
Linear Derating Factor 4.0 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
b
a
a
= 25 °C P
C
c
E
AS
I
AR
E
AR
D
dV/dt 13 V/ns
, T
J
stg
Soldering Recommendations (Peak Temperature) for 10 s 300
Mounting Torque 6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
SD
d. 1.6 mm from case.
= 25 °C, L = 1.4 mH, Rg = 25 , IAS = 27 A, dV/dt = 13 V/ns (see fig. 12).
J
27 A, dI/dt 390 A/μs, VDD VDS, TJ 150 °C.
600
27
530 mJ
27 A
50 mJ
500 W
- 55 to + 150
d
10 lbf · in
1.1 N · m
V
AT
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91219 www.vishay.com
S11-0487-Rev. C, 21-Mar-11 1
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
www.vishay.com/doc?91000
IRFP27N60K, SiHFP27N60K
S
D
G
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Maximum Junction-to-Case (Drain) R
thJA
thCS
thJC
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
V
Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 640 - mV/°C
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
Dynamic
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Output Capacitance C
Effective Output Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Reverse Recovery Current I
Forward Turn-On Time t
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. C
eff. is a fixed capacitance that gives the same charging time as C
oss
www.vishay.com Document Number: 91219
2 S11-0487-Rev. C, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
DS
GS(th)
V
GSS
DSS
VGS = 10 V ID = 16 A
DS(on)
fs
iss
- 460 -
oss
-41-
rss
oss
eff. VGS = 0 V VDS = 0 V to 480 V - 250 -
oss
g
--56
gs
--86
gd
d(on)
r
-43-
d(off)
-38-
f
S
I
SM
SD
rr
rr
RRM
on
V
V
GS
V
GS
V
GS
Rg = 4.3 , VGS = 10 V, see fig. 10
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IF = 27 A, dI/dt = 100 A/μs
This datasheet is subject to change without notice.
-40
0.24 -
°C/WCase-to-Sink, Flat, Greased Surface R
-0.29
VGS = 0 V, ID = 250 μA 600 - - V
VDS = VGS, ID = 250 μA 3.0 - 5.0 V
= ± 30 V - - ± 100 nA
GS
VDS = 600 V, VGS = 0 V - - 50
= 480 V, VGS = 0 V, TJ = 125 °C - - 250
DS
b
- 0.18 0.22
VDS = 50 V, ID = 16 A 14 - - S
VGS = 0 V
= 25 V
V
DS
- 4660 -
f = 1.0 MHz, see fig. 5
= 0 V VDS = 1.0 V , f = 1.0 MHz - 5490 -
= 0 V VDS = 480 V , f = 1.0 MHz - 120 -
- - 180
= 27 A, VDS = 480 V
I
= 10 V
D
see fig. 6 and 13
b
-27-
V
= 300 V, ID = 27 A
DD
b
- 110 -
--27
- - 110
TJ = 25 °C, IS = 27 A, VGS = 0 V
b
--1.5V
- 620 920 ns
b
-1116μC
-3653A
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
while VDS is rising from 0 % to 80% VDS.
oss
www.vishay.com/doc?91000
μA
pF
nC Gate-Source Charge Q
ns
A
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
5.0V
20µs PULSE WIDTH
Tj = 25°C
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
5.0V
20µs PULSE WIDTH
Tj = 150°C
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
28A
IRFP27N60K, SiHFP27N60K
Vishay Siliconix
1000.00
Fig. 1 - Typical Output Characteristics
)
Α
100.00
(
t
n
e
r
r
u
C
10.00
e
c
r
u
o
S
-
1.00
o
t
n
i
a
r
D
,
0.10
D
I
0.01
TJ= 25°C
VDS= 100V
20µs PULSE WIDTH
5.0 7.0 9.0 11.0 13.0 15.0
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
TJ= 150°C
Fig. 2 - Typical Output Characteristics
Document Number: 91219 www.vishay.com
S11-0487-Rev. C, 21-Mar-11 3
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 4 - Normalized On-Resistance vs. Temperature
This datasheet is subject to change without notice.
www.vishay.com/doc?91000
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