Vishay IRFP250, SiHFP250 Data Sheet
Power MOSFET
TO-247AC
G
D
S
Available
RoHS*
COMPLIANT
IRFP250, SiHFP250
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 200
R
(Ω)V
DS(on)
Q
(Max.) (nC) 140
g
Q
(nC) 28
gs
Q
(nC) 74
gd
Configuration Single
= 10 V 0.085
GS
D
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
•Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
G
ruggedized device design, low on-resistance and
cost-effictiveness.
The TO-220AB package is universially preferred for
commercial-industrial applications where higher power
S
N-Channel MOSFET
levels preclude the use of TO-220AB devices. The
TO-247AC is similar but superior to the earlier TO-218
package because of its isolated mounting hole. It also
provides greater creepage distance between pins to meet
the requirements of most safety specifications.
ORDERING INFORMATION
Package TO-247AC
Lead (Pb)-free
SnPb
IRFP250PbF
SiHFP250-E3
IRFP250
SiHFP250
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
a
at 10 V
GS
C
T
= 100 °C 19
C
DS
± 20
GS
I
D
IDM 120
Linear Derating Factor 1.5
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
b
a
a
= 25 °C P
c
C
E
AS
I
AR
E
AR
D
dV/dt 5.0
, T
J
stg
Soldering Recommendations (Peak Temperature) for 10 s 300
Mounting Torque 6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
= 50 V, starting TJ = 25 °C, L = 683 μH, Rg = 25 Ω, IAS = 30 A (see fig. 12).
b. V
DD
≤ 30 A, dI/dt ≤ 190 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
c. I
SD
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91212 www.vishay.com
S11-0445-Rev. B, 21-Mar-11 1
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
200
30
410
30
19
190
- 55 to + 150
d
10
1.1
www.vishay.com/doc?91000
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N · m
IRFP250, SiHFP250
S
D
G
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Maximum Junction-to-Case (Drain) R
thJA
thCS
thJC
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.27 - V/°C
V
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
Internal Source Inductance L
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
DS
GS(th)
V
GSS
DSS
VGS = 10 V ID = 18 A
DS(on)
fs
iss
- 780 -
oss
- 250 -
rss
g
--28
gs
--
gd
d(on)
r
-70-
d(off)
-62-
f
D
V
V
GS
R
Between lead,
6 mm (0.25") from
package and center of
S
S
die contact
MOSFET symbol
showing the
integral reverse
I
SM
SD
rr
rr
on
p - n junction diode
TJ = 25 °C, IF = 30 A, dI/dt = 100 A/μs
-40
0.24 -
°C/WCase-to-Sink, Flat, Greased Surface R
-0.65
VGS = 0 V, ID = 250 μA 200 - - V
VDS = VGS, ID = 250 μA 2.0 - 4.0 V
= ± 20 V - - ± 100 nA
GS
VDS = 200 V, VGS = 0 V - - 25
= 160 V, VGS = 0 V, TJ = 125 °C - - 250
DS
b
- - 0.085 Ω
VDS = 50 V, ID = 18 A 12 - - S
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
- 2800 -
- - 140
= 30 A, VDS = 160 V,
I
= 10 V
D
see fig. 6 and 13
b
74
-16-
V
= 100 V, ID = 30 A,
DD
= 6.2 Ω, RD = 3.2 Ω, see fig. 10
g
G
b
D
S
-86-
-5.0-
-13-
--30
- - 120
TJ = 25 °C, IS = 30 A, VGS = 0 V
b
--2.0V
- 360 540 ns
-4.66.9μC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
μA
pFOutput Capacitance C
nC
ns
nH
A
www.vishay.com Document Number: 91212
2 S11-0445-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRFP250, SiHFP250
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 2 -Typical Output Characteristics, T
= 150 °C
C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91212 www.vishay.com
S11-0445-Rev. B, 21-Mar-11 3
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
www.vishay.com/doc?91000
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