Vishay IRFP23N50L, SiHFP23N50L Data Sheet

IRFP23N50L, SiHFP23N50L

N-Channel MOSFET

TO-247AC

Available

RoHS*

COMPLIANT

Power MOSFET

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 500

()V

DS(on)

(Max.) (nC) 150

(nC) 44

(nC) 72

Configuration Single

= 10 V 0.190

FEATURES

• Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications

• Lower Gate Charge Results in Simpler Drive Requirements

• Enhanced dV/dt Capabilities Offer Improved Ruggedness

• Higher Gate Voltage Threshold Offers Improved Noise Immunity

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Zero Voltage Switching SMPS

• Telecom and Server Power Supplies

• Uninterruptible Power Supplies

• Motor Control Applications

ORDERING INFORMATION

Package TO-247AC

Lead (Pb)-free

SnPb

IRFP23N50LPbF

SiHFP23N50L-E3

IRFP23N50L

SiHFP23N50L

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

at 10 V

= 100 °C 15

± 30

IDM 92

Linear Derating Factor 2.9 W/°C

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation T

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range T

= 25 °C P

dV/dt 21 V/ns

, T

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting T c. I

d. 1.6 mm from case.

= 25 °C, L = 1.5 mH, Rg = 25 , IAS = 23 A (see fig. 12).

 23 A, dI/dt  650 A/μs, VDD  VDS, TJ  150 °C.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91209 www.vishay.com S11-0445-Rev. B, 21-Mar-11 1

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

500

410 mJ

23 A

37 mJ

370 W

- 55 to + 150

10 lbf · in

1.1 N · m

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°C

IRFP23N50L, SiHFP23N50L

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Output Capacitance C

Effective Output Capacitance C Effective Output Capacitance

(Energy Related) Internal Gate Resistance R

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Reverse Recovery Current I

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %.

eff. is a fixed capacitance that gives the same charging time as C

c. C

oss

eff. (ER) is a fixed capacitance that stores the same energy time as C

d. C

oss

GS(th)

GSS

DSS

VGS = 10 V ID = 14 A

DS(on)

iss

- 380 -

oss

-37-

rss

oss

eff. VDS = 0 V to 400 V

oss

eff. (ER) VDS = 0 V to 400 V

oss

f = 1 MHz, open drain - 1.2 - 

--44

--72

d(on)

-53-

d(off)

-45-

RRM

MOSFET symbol showing the integral reverse

p - n junction diode

TJ = 25 °C

= 125 °C - 220 330

TJ = 25 °C - 560 840

=1 25 °C - 980 1500

-40

0.24 -

°C/WCase-to-Sink, Flat, Greased Surface R

-0.34

VGS = 0 V, ID = 250 μA 500 - - V

-0.27-V/°C

VDS = VGS, ID = 250 μA 3.0 - 5.0 V

= ± 30 V - - ± 100 nA

VDS = 500 V, VGS = 0 V - - 50 μA

= 400 V, VGS = 0 V, TJ = 125 °C - - 2.0 mA

VDS = 50 V, ID = 14 A

VGS = 0 V,

= 25 V,

- 0.190 0.235 

12 - - S

- 3600 -

f = 1.0 MHz, see fig. 5

= 1.0 V , f = 1.0 MHz - 4800 -

= 400 V , f = 1.0 MHz - 100 -

= 0 V

= 10 V

TJ = 25 °C, IS = 14 A, VGS = 0 V

= 23 A, VDS = 400 V

see fig. 6 and 13

= 250 V, ID = 23 A

Rg = 6.0, V

see fig. 10

= 10 V

- 220 -

- 160 -

- - 150

-26-

-94-

--23

--92

--1.5V

- 170 250

= 23 A,

dI/dt = 100 A/μs

TJ = 25 °C - 7.6 11 A

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

while VDS is rising fom 0 % to 80 % VDS.

oss

while VDS is rising fom 0 % to 80 % VDS.

oss

nC Gate-Source Charge Q

μC

www.vishay.com Document Number: 91209 2 S11-0445-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

0.1 1 10 100

0.001

0.01

0.1

100

Drain-to-Source Current (A)

4.5 V

20µs PULSE WIDTH Tj = 25 °C

VDS, Drain-to-Source Voltage (V)

TOP 15V

VGS

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

10 100

0.1

100

20µs PULSE WIDTH Tj = 150 °C

VDS, Drain-to-Source Voltage (V)

, Drain-to-Source Current (A)

4,5 V

TOP 15V

VGS

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

1.0 6.0 11.0 16.0

VGS, Gate-to-Source Voltage (V)

1.00

10.00

100.00

1000.00

, Drain-to Source Current (A)

TJ = 25 °C

= 150 °C

20 µs PULSE WIDTH

= 150°C

-60 -40 -20 0 20 40 60 80 100 140 160

0.0

0.5

1.0

1.5

2.0

2.5

3.0

ID = 23 A

= 10 V

120

Junction Temperature (°C)

DS(ON)

, Drain-to-Source On Resistance

(Normalized)

IRFP23N50L, SiHFP23N50L

Vishay Siliconix

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91209 www.vishay.com S11-0445-Rev. B, 21-Mar-11 3

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

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