Vishay IRFP22N60K, SiHFP22N60K Data Sheet
IRFP22N60K, SiHFP22N60K
TO-247AC
G
D
S
Power MOSFET
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 600
R
()V
DS(on)
Q
(Max.) (nC) 150
g
Q
(nC) 45
gs
Q
(nC) 76
gd
Configuration Single
= 10 V 0.24
GS
D
FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Enhanced Body Diode dV/dt Capability
• Compliant to RoHS Directive 2002/95/EC
BENEFITS
G
S
N-Channel MOSFET
• Hard Switching Primary or PFS Switch
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
• Motor Drive
ORDERING INFORMATION
Package TO-247AC
Lead (Pb)-free
SnPb
IRFP22N60KPbF
SiHFP22N60K-E3
IRFP22N60K
SiHFP22N60K
Available
RoHS*
COMPLIANT
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
= 25 °C
T
Continuous Drain Current V
Pulsed Drain Current
a
at 10 V
GS
C
= 100 °C 14
C
DS
± 30
GS
I
D
IDM 88
Linear Derating Factor 2.9 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
b
a
a
= 25 °C P
C
c
E
AS
I
AR
E
AR
D
dV/dt 15 V/ns
, T
J
stg
Soldering Recommendations (Peak Temperature) for 10 s 300
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
SD
= 25 °C, L = 1.5 mH, Rg = 25 , IAS = 22 A (see fig. 12).
J
22 A, dI/dt 360 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
600
22
380 mJ
22 A
37 mJ
370 W
- 55 to + 150
d
V
AT
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91208 www.vishay.com
S11-0445-Rev. B, 21-Mar-11 1
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
www.vishay.com/doc?91000
IRFP22N60K, SiHFP22N60K
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
thJA
R
thCS
R
thJC
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
Temperature Coefficient
V
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
Dynamic
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Output Capacitance C
Effective Output Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Reverse Recovery Current I
Forward Turn-On Time t
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. C
eff. is a fixed capacitance that gives the same charging time as C
oss
www.vishay.com Document Number: 91208
2 S11-0445-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
DS
V
DS/TJ
GS(th)
V
GSS
DSS
VGS = 10 V ID = 13 A
DS(on)
fs
iss
- 350 -
oss
-36-
rss
oss
eff. VDS = 0 V to 480 V - 180 -
oss
g
--45
gs
--76
gd
d(on)
r
-48-
d(off)
-37-
f
S
V
V
GS
V
GS
MOSFET symbol
showing the
integral reverse
I
SM
SD
p - n junction diode
TJ = 25 °C
rr
T
= 125 °C - 670 1010
J
TJ = 25 °C - 7.2 11
rr
RRM
on
T
=1 25 °C - 8.5 13
J
This datasheet is subject to change without notice.
-40
0.24 -
°C/W
-0.34
VGS = 0 V, ID = 250 μA 600 - - V
Reference to 25 °C, I
= 1 mA
D
d
-0.30-
VDS = VGS, ID = 250 μA 3.0 - 5.0 V
= ± 30 V - - ± 100 nA
GS
VDS = 600 V, VGS = 0 V - - 50
= 480 V, VGS = 0 V, TJ = 125 °C - - 250
DS
VDS = 50 V, ID = 13 A
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
V
DS
= 0 V
V
DS
= 1.0 V , f = 1.0 MHz - 4710 -
= 480 V , f = 1.0 MHz - 92 -
b
b
- 0.240 0.280
11 - - S
- 3570 -
- - 150
= 22 A, VDS = 480 V
I
= 10 V
D
see fig. 6 and 13
b
-26-
= 300 V, ID = 22 A,
V
DD
R
= 6.2, V
g
see fig. 10
GS
= 10 V,
b
G
TJ = 25 °C, IS = 22 A, VGS = 0 V
D
S
b
-99-
--22
--88
--1.5V
- 590 890
I
= 22 A,
F
dI/dt = 100 A/μs
b
TJ = 25 °C - 26 39
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
while VDS is rising from 0 % to 80 % VDS.
oss
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V/°C
μA
pF
nC Gate-Source Charge Q
ns
A
ns
μC
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
5.0V
20µs PULSE WIDTH
Tj = 25°C
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
0. 1 1 10 100
VDS, Drai n-to-Sourc e Voltage (V )
0. 1
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
5.0V
20µs PULSE WIDTH
Tj = 150° C
VGS
TOP 15 V
12 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
BOTTOM 5.0V
5. 0 6. 0 7.0 8. 0 9. 0 10. 0
VGS, Gate-to-Source Voltage (V)
0.01
0.10
1.00
10. 00
100. 00
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
TJ= 25°C
TJ= 150°C
V
DS
= 50V
20µs PULSE WIDTH
IRFP22N60K, SiHFP22N60K
Vishay Siliconix
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Document Number: 91208 www.vishay.com
S11-0445-Rev. B, 21-Mar-11 3
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 3 - Typical Transfer Characteristics
3.0
I =
D
2.5
2.0
1.5
(Normalized)
1.0
, Drain-to-S ource On Resistance
DS(on)
0.5
r
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
Fig. 4 - Normalized On-Resistance vs. Temperature
This datasheet is subject to change without notice.
22A
TJ, Juncti on Temperature ( ° C)
V =
10V
GS
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