Vishay IRFP22N50A, SiHFP22N50A Data Sheet
IRFP22N50A, SiHFP22N50A
N-Channel MOSFET
G
D
S
TO-247AC
G
D
S
Available
RoHS*
COMPLIANT
Power MOSFET
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 500
R
()V
DS(on)
Q
(Max.) (nC) 120
g
Q
(nC) 32
gs
Q
(nC) 52
gd
Configuration Single
= 10 V 0.23
GS
FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptable Power Supply
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Full Bridge Converters
• Power Factor Correction Boost
ORDERING INFORMATION
Package TO-247AC
Lead (Pb)-free
SnPb
IRFP22N50APbF
SiHFP22N50A-E3
IRFP22N50A
SiHFP22N50A
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
a
at 10 V
GS
C
= 100 °C 14
T
C
DS
± 30
GS
I
D
IDM 88
Linear Derating Factor 2.2 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
b
a
a
= 25 °C P
c
C
E
AS
I
AR
E
AR
D
dV/dt 4.8 V/ns
, T
J
stg
Soldering Recommendations (Peak Temperature) for 10 s 300
Mounting Torque 6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
SD
= 25 °C, L = 4.87 mH, Rg = 25 , IAS = 22 A (see fig. 12).
J
22 A, dI/dt 190 A/µs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91207 www.vishay.com
S11-0446-Rev. C, 14-Mar-11 1
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
500
22
1180 mJ
22 A
28 mJ
277 W
- 55 to + 150
d
10 lbf · in
1.1 N · m
V
A
°C
IRFP22N50A, SiHFP22N50A
S
D
G
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Maximum Junction-to-Case (Drain) R
thJA
thCS
thJC
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.55 -
V
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
Dynamic
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Output Capacitance C
Effective Output Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 µs; duty cycle 2 %.
c. C
eff. is a fixed capacitance that gives the same charging time as C
oss
DS
GS(th)
V
GSS
DSS
VGS = 10 V ID = 13 A
DS(on)
fs
iss
- 513 -
oss
-27-
rss
oss
eff. VDS = 0 V to 400 V
oss
g
--32
gs
--52
gd
d(on)
r
-47-
d(off)
-47-
f
S
V
V
V
GS
R
MOSFET symbol
showing the
integral reverse
I
SM
SD
rr
rr
on
p - n junction diode
TJ = 25 °C, IF = 22 A, dI/dt = 100 A/µs
-40
0.24 -
°C/WCase-to-Sink, Flat, Greased Surface R
-0.45
VGS = 0 V, ID = 250 µA 500 - -
VDS = VGS, ID = 250 µA 2.0 -
= ± 30 V - - ± 100 nA
GS
4.0
VDS = 500 V, VGS = 0 V - - 25
= 400 V, VGS = 0 V, TJ = 125 °C - - 250
DS
VDS = 50 V, ID = 13 A
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
V
DS
GS
= 0 V
V
DS
b
b
= 1.0 V, f = 1.0 MHz 4935
= 400 V, f = 1.0 MHz 137
c
--0.23
12 - - S
- 3450 -
264
- - 120
= 22 A, VDS = 400 V,
I
= 10 V
D
see fig. 6 and 13
b
-26-
V
= 250 V, ID = 22 A,
DD
= 4.3 , RD = 11, see fig. 10
G
b
-94-
--22
--88
TJ = 25 °C, IS = 22A, VGS = 0 V
b
--1.5V
- 570 850 ns
b
-6.19.2µC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
while VDS is rising from 0 % to 80 % VDS.
oss
V
V/°C
V
µA
pF
nC Gate-Source Charge Q
ns
A
www.vishay.com Document Number: 91207
2 S11-0446-Rev. C, 14-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
IRFP22N50A, SiHFP22N50A
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91207 www.vishay.com
S11-0446-Rev. C, 14-Mar-11 3
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
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