Vishay IRFP21N60L, SiHFP21N60L Data Sheet

IRFP21N60L, SiHFP21N60L

TO-247AC

G

D

S

Available

RoHS*

COMPLIANT

Power MOSFET

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 600

R

()V

DS(on)

Q

(Max.) (nC) 150

g

Q

(nC) 46

gs

Q

(nC) 64

gd

Configuration Single

= 10 V 0.27

GS

D

FEATURES

• Superfast Body Diode Eliminates the Need for
External Diodes in ZVS Applications

• Lower Gate Charge Results in Simple Drive
Requirements

• Enhanced dV/dt Capabilities Offer Improved Ruggedness

• Higher Gate Voltage Threshold Offers Improved Noise
Immunity

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Zero Voltage Switching SMPS

G

• Telecom and Server Power Supplies

• Uninterruptible Power Supplies

• Motor Control Applications

S

N-Channel MOSFET

ORDERING INFORMATION

Package TO-247AC

Lead (Pb)-free

SnPb

IRFP21N60LPbF
SiHFP21N60L-E3
IRFP21N60L
SiHFP21N60L

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

a

at 10 V

GS

C

= 100 °C 13

T

C

DS

± 30

GS

I

D

IDM 84

Linear Derating Factor 2.6 W/°C

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation T

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range T

b

a

a

= 25 °C P

c

C

E

AS

I

AR

E

AR

D

dV/dt 16 V/ns

, T

J

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I

SD

d. 1.6 mm from case.

= 25 °C, L = 1.9 mH, Rg = 25 , IAS = 21 A, dV/dt = 11 V/ns (see fig. 12a).

J

 21 A, dI/dt  530 A/μs, VDD  VDS, TJ  150 °C.

600

21

420 mJ

21 A

33 mJ

330 W

- 55 to + 150

d

10 lbf · in

1.1 N · m

V

A

°C

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91206 www.vishay.com
S11-0446-Rev. C, 14-Mar-11 1

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

IRFP21N60L, SiHFP21N60L

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 420 - mV/°C

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Effective Output Capacitance C

Effective Output Capacitance
(Energy Related)

Total Gate Charge Q

Gate-Drain Charge Q

Gate Resistance R

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Reverse Recovery Time I

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. C

eff. is a fixed capacitance that gives the same charging time as C

oss

C

eff. (ER) is a fixed capacitance that stores the same energy as C

oss

www.vishay.com Document Number: 91206
2 S11-0446-Rev. C, 14-Mar-11

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

DS

GS(th)

V

GSS

DSS

VGS = 10 V ID = 13 A

DS(on)

fs

iss

- 340 -

oss

-29-

rss

eff.

oss

C

eff. (ER) - 130 -

oss

g

--46

gs

--64

gd

g

d(on)

r

-33-

d(off)

-10-

f

S

I

SM

SD

rr

rr

RRM

on

V

V

GS

MOSFET symbol
showing the

integral reverse
p - n junction diode

This datasheet is subject to change without notice.

-40

0.24 -

°C/WCase-to-Sink, Flat, Greased Surface R

-0.38

VGS = 0 V, ID = 250 μA 600 - - V

VDS = VGS, ID = 250 μA 3.0 - 5.0 V

= ± 30 V - - ± 100 nA

GS

VDS = 600 V, VGS = 0 V - - 50 μA

= 480 V, VGS = 0 V, TJ = 125 °C - - 2.0 mA

DS

b

- 0.27 0.32 

VDS = 50 V, ID = 13 A 11 - - S

VGS = 0 V,

= 25 V,

V

DS

- 4000 -

f = 1.0 MHz, see fig. 5

V

= 0 V,

GS

V

= 0 V to 480 V

DS

c

- 170 -

- - 150

= 21 A, VDS = 480 V

I

= 10 V

D

see fig. 7 and 15

b

f = 1 MHz, open drain - 0.63 - 

-20-

= 300 V, ID = 21 A,

V

DD

= 1.3 , VGS = 10 V,

R

g

see fig. 11a and 11b

b

G

TJ = 25 °C, IS = 21 A, VGS = 0 V

TJ = 25 °C, IF = 21 A

T

= 125 °C, dI/dt = 100 A/μs

J

TJ = 25 °C, IF = 21 A, VGS = 0 V

T

= 125 °C, dI/dt = 100 A/μs

J

D

S

b

b

b

b

-58-

--21

--84

--1.5V

- 160 240

- 400 610

- 480 730

- 1540 2310

TJ = 25 °C - 5.3 7.9 A

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

while VDS is rising form 0 % to 80 % VDS.

oss

while VDS is rising from 0 % to 80 % VDS.

oss

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pF

nC Gate-Source Charge Q

ns

A

ns

nC

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

0.01

0.1

1

10

100

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

r

e

n

t

(

A

)

5.5V

20µs PULSE WIDTH
Tj = 150°C

VGS

TOP 15V

12V
10V

8.0V

7.0V

6.5V

6.0V

BOTTOM 5.5V

4 6 8 10 12 14 16

VGS, Gate-to-Source Voltage (V)

0.01

0.1

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

r

e

n

t

(

Α

)

TJ= 25°C

TJ= 150°C

VDS= 50V

20µs PULSE WIDTH

IRFP21N60L, SiHFP21N60L

Vishay Siliconix

1000

TOP 15V

100

)
A

(
t
n
e

r

10

r
u

C
e

c

r
u
o
S

­o

t

­n

i
a

r
D

,

D

I

BOTTOM 5.5V

1

0.1

0.01

VGS

12V
10V

8.0V

7.0V

6.5V

6.0V

5.5V

20µs PULSE WIDTH
Tj = 25°C

0.001

0.1 1 10 100 1000

VDS, Drain-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

3.0

e
c
n
a

t
s

i
s
e

R
n
O
e

c

r
u
o
S

­o

t

­n

i
a

r
D

,

)
n
o

(
S
D

R

ID= 21A

V

= 10V

GS

2.5

2.0

)
d
e
z

i

l

1.5

a
m

r
o

N

(

1.0

0.5

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ, Junction Temperature (°C)

Fig. 2 - Typical Output Characteristics

Document Number: 91206 www.vishay.com
S11-0446-Rev. C, 14-Mar-11 3

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 4 - Normalized On-Resistance vs. Temperature

This datasheet is subject to change without notice.

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