Vishay IRFL9110, SiHFL9110 Data Sheet
www.vishay.com
S
G
D
P-Channel MOSFET
IRFL9110, SiHFL9110
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) -100
R
()V
DS(on)
Q
(Max.) (nC) 8.7
g
Q
(nC) 2.2
gs
Q
(nC) 4.1
gd
Configuration Single
= -10 V 1.2
GS
FEATURES
• Surface mount
• Available in tape and reel
• Dynamic dV/dt rating
• Repetitive avalanche rated
•P-channel
• Fast switching
• Ease of paralleling
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
SOT-223
D
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The SOT-223 package is designed for surface-mount using
S
D
G
vapor phase, infrared, or wave soldering techniques. Its
unique package design allows for easy automatic
pick-and-place as with other SOT or SOIC packages but
Marking code: FF
has the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation of
greater than 1.25 W is possible in a typical surface mount
application.
ORDERING INFORMATION
Package SOT-223 SOT-223
Lead (Pb)-free and Halogen-free SiHFL9110-GE3 SiHFL9110TR-GE3
Lead (Pb)-free
Note
a. See device orientation.
IRFL9110PbF IRFL9110TRPbF
SiHFL9110-E3 SiHFL9110T-E3
Available
a
a
a
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
a
at - 10 V
GS
C
= 100 °C -0.69
C
DS
± 20
GS
I
D
IDM -8.8
Linear Derating Factor 0.025
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Avalanche Current
a
Repetitive Avalanche Energy
Maximum Power Dissipation T
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak Temperature)
e
b
a
= 25 °C
e
c
d
C
TA = 25 °C 2.0
for 10 s 300
E
AS
I
AR
E
AR
P
D
dV/dt -5.5 V/ns
, T
J
stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
= -25 V, starting TJ = 25 °C, L = 7.7 mH, Rg = 25 , IAS = -4.4 A (see fig. 12).
b. V
DD
c. I
-4.4 A, dI/dt -75 A/μs, VDD VDS, TJ 150 °C.
SD
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
S14-1686-Rev. F, 18-Aug-14
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
-100
-1.1
0.017
100 mJ
-1.1 A
0.31 mJ
3.1
-55 to +150
Document Number: 91196
V
AT
W/°C
W
°C
IRFL9110, SiHFL9110
D
S
G
www.vishay.com
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL MIN. TYP. MAX. UNIT
Maximum Junction-to-Ambient
(PCB Mount)
a
Maximum Junction-to-Case (Drain) R
R
thJA
thJC
--60
--40
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
V
Temperature Coefficient VDS/TJ Reference to 25 °C, ID = -1 mA - -0.091 - V/°C
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
DS
GS(th)
V
GSS
DSS
VGS = -10 V ID = -0.66 A
DS(on)
fs
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
Internal Source Inductance L
iss
-94-
oss
-18-
rss
g
--2.2
gs
--4.1
gd
d(on)
r
-15-
d(off)
-17-
f
D
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
S
I
SM
SD
rr
rr
on
TJ = 25 °C, IF = -4.0 A, dI/dt = 100 A/μs
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
VGS = 0 V, ID = -250 μA -100 - - V
VDS = VGS, ID = -250 μA -2.0 - -4.0 V
= ± 20 V - - ± 100 nA
GS
VDS = -100 V, VGS = 0 V - - -100
= -80 V, VGS = 0 V, TJ = 125 °C - - - 500
V
DS
b
VDS = -50 V, ID = -0.66 A 0.82 - - S
VGS = 0 V,
V
= - 25 V,
DS
f = 1.0 MHz, see fig. 5
= -4.0 A, VDS = -80 V,
I
V
= -10 V
GS
V
R
= 24 , RD = 11 , see fig. 10
G
D
see fig. 6 and 13
= -50 V, ID = -4.0 A,
DD
b
b
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IS = -1.1 A, VGS = 0 V
D
G
S
b
b
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Vishay Siliconix
°C/W
--1.2
- 200 -
--8.7
-10-
-27-
-4.0-
-6.0-
---1.1
---8.8
---5.5V
- 80 160 ns
-0.150.30μC
μA
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
nH
A
S14-1686-Rev. F, 18-Aug-14
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: hvm@vishay.com
2
Document Number: 91196
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRFL9110, SiHFL9110
Vishay Siliconix
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
S14-1686-Rev. F, 18-Aug-14
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3
Document Number: 91196
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