Vishay IRFL210, SiHFL210 Data Sheet

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IRFL210, SiHFL210

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V) 200

R

()V

DS(on)

Q

(Max.) (nC) 8.2

g

Q

(nC) 1.8

gs

Q

(nC) 4.5

gd

Configuration Single

= 10 V 1.5

GS

D

FEATURES

• Surface mount

• Available in tape and reel

• Dynamic dV/dt rating

• Repetitive avalanche rated

• Fast switching

• Ease of paralleling

• Simple drive requirements

• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

DESCRIPTION

SOT-223

D

Marking code: FC

G

S

D

G

S

N-Channel MOSFET

Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The SOT-223 package is designed for surface-mounting
using vapor phase, infrared, or wave soldering techniques.
Its unique package design allows for easy automatic
pick-and-place as with other SOT or SOIC packages but
has the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation of
greater than 1.25 W is possible in a typical surface mount
application.

ORDERING INFORMATION

Package SOT-223 SOT-223

Lead (Pb)-free and Halogen-free SiHFL210-GE3 SiHFL210TR-GE3

Lead (Pb)-free

Note

a. See device orientation.

IRFL210PbF IRFL210TRPbF

SiHFL210-E3 SiHFL210T-E3

Available

a

a

a

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

a

at 10 V

GS

C

= 100 °C 0.6

C

DS

± 20

GS

I

D

IDM 7.7

Linear Derating Factor 0.025

Linear Derating Factor (PCB Mount)

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation T

Maximum Power Dissipation (PCB Mount)

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range T

Soldering Recommendations (Peak Temperature)

e

b

a

a

= 25 °C

e

c

d

C

TA = 25 °C 2.0

for 10 s 300

E

AS

I

AR

E

AR

P

D

dV/dt 5.0 V/ns

, T

J

stg

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

= 50 V, starting TJ = 25 °C, L = 81 mH, RG = 25 , IAS = 0.96 A (see fig. 12).

b. V

DD

c. I

 3.3 A, dI/dt  70 A/μs, VDD  VDS, TJ  150 °C.

SD

d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).

S14-1685-Rev. E, 18-Aug-14

1

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

200

0.96

0.017

50 mJ

0.96 A

0.31 mJ

3.1

-55 to +150

Document Number: 91193

V

AT

W/°C

W

°C

IRFL210, SiHFL210

D

S

G

www.vishay.com

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL MIN. TYP. MAX. UNIT

Maximum Junction-to-Ambient 
(PCB Mount)

a

Maximum Junction-to-Case (Drain) R

R

thJA

thJC

--40

--60

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.30 - V/°C

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

DS

GS(th)

V

GSS

DSS

VGS = 10 V ID = 0.58 A

DS(on)

fs

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

Internal Source Inductance L

iss

-53-

oss

-15-

rss

g

--1.8

gs

--4.5

gd

d(on)

r

-14-

d(off)

-8.9-

f

D

V

Between lead,
6 mm (0.25") from
package and center of

S

die contact

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

S

I

SM

SD

rr

rr

on

MOSFET symbol
showing the 
integral reverse
p - n junction diode

TJ = 25 °C, IF = 3.3 A, dI/dt = 100 A/μs

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.

VGS = 0 V, ID = 250 μA 200 - - V

VDS = VGS, ID = 250 μA 2.0 - 4.0 V

= ± 20 V - - ± 100 nA

GS

VDS = 200 V, VGS = 0 V - - 25

= 160 V, VGS = 0 V, TJ = 125 °C - - 250

V

DS

b

VDS = 50 V, ID = 0.58 A 0.51 - - S

VGS = 0 V,

V

= 25 V,

DS

f = 1.0 MHz, see fig. 5

= 3.3 A, VDS = 160 V,

I

= 10 V

GS

V

R

= 24 , RD = 30 , see fig. 10

g

TJ = 25 °C, IS = 0.96 A, VGS = 0 V

D

see fig. 6 and 13

= 100 V, ID = 3.3 A,

DD

b

b

D

G

S

b

b

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Vishay Siliconix

°C/W

--1.5

- 140 -

--8.2

-8.2-

-17-

-4.0-

-6.0-

- - 0.96

--7.7

--2.0V

- 150 310 ns

-0.601.4μC

μA

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

A

S14-1685-Rev. E, 18-Aug-14

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: [e-mail]

2

Document Number: 91193

www.vishay.com

91193_01

20 µs Pulse Width
T

C

= 25 °C

4.5 V

10

1

10

0

10

-1

10

0

10

1

VDS, Drain-to-Source Voltage (V)

I

D

, Drain Current (A)

10

-1

Bottom

To p

V

GS

15 V

10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

91193_03

25 °C

150 °C

20 µs Pulse Width
V

DS

= 50 V

10

-1

10

0

I

D

, Drain Current (A)

V

GS

,

Gate-to-Source Voltage (V)

5678910

4

10

-2

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics, TC = 25 °C

IRFL210, SiHFL210

Vishay Siliconix

3.5
I

= 3.3 A

D

= 10 V

V

GS

3.0

2.5

2.0

1.5

(Normalized)

1.0

, Drain-to-Source On Resistance

0.5

DS(on)

0.0

R

- 60 - 40 - 20 0 20 40 60 80 100 120 140 160

91193_04

Fig. 4 - Normalized On-Resistance vs. Temperature

T

Junction Temperature (°C)

,

J

V

15 V

GS

To p

10 V

8.0 V

0

10

7.0 V

6.0 V

5.5 V

5.0 V

Bottom

4.5 V

, Drain Current (A)

-1

10

D

I

-1

10

V

Drain-to-Source Voltage (V)

91193_02

DS

,

Fig. 2 - Typical Output Characteristics, T

Fig. 3 - Typical Transfer Characteristics

S14-1685-Rev. E, 18-Aug-14

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

300

250

V

= 0 V, f = 1 MHz

GS

= Cgs + Cgd, Cds Shorted

C

iss

= C

C

rss

gd

C

= Cds + C

oss

gd

200

C

iss

4.5 V

20 µs Pulse Width

= 150 °C

T

C

0

10

10

1

= 150 °C

C

150

C

100

Capacitance (pF)

50

0

0

10

91193_05

V

Drain-to-Source Voltage (V)

,

DS

oss

C

rss

1

10

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

20

ID = 3.3 A

V

= 160 V

16

V

DS

V

= 40 V

12

DS

DS

= 100 V

8

4

, Gate-to-Source Voltage (V)

GS

V

91193_06

0

02 864

QG, Total Gate Charge (nC)

For test circuit
see figure 13

10

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

3

Document Number: 91193

For technical questions, contact: [e-mail]