Vishay IRFIBC40G, SiHFIBC40G Data Sheet

Power MOSFET

IRFIBC40G, SiHFIBC40G

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 600

R

(Ω)V

DS(on)

Q

(Max.) (nC) 60

g

Q

(nC) 8.3

gs

Q

(nC) 30

gd

Configuration Single

TO-220 FULLPAK

= 10 V 1.2

GS

D

FEATURES

• Isolated Package

• Low Thermal Resistance

• Sink to Lead Creepage Dist. = 4.8 mm

• High Voltage Isolation = 2.5 kV
f = 60 Hz)

• Dynamic dV/dt Rating

• Lead (Pb)-free Available

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,

G

ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional
insulating hardware in commercial-industrial applications.

S

D

G

N-Channel MOSFET

S

The molding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
FULLPAK is mounted to a heatsink using a single clip or by
a single screw fixing.

ORDERING INFORMATION

Package TO-220 FULLPAK

Lead (Pb)-free

SnPb

IRFIBC40GPbF
SiHFIBC40G-E3
IRFIBC40G
SiHFIBC40G

RMS

(t = 60 s,

Available

RoHS*

COMPLIANT

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V
Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

a

at 10 V

GS

C

= 100 °C 2.2

C

DS

± 20

GS

I

D

IDM 14
Linear Derating Factor 0.32 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt

b

a

a

= 25 °C P

c

C

Operating Junction and Storage Temperature Range T

E

AS

I

AR

E

AR

D

dV/dt 3.0 V/ns

, T

J

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V

= 50 V, starting TJ = 25 °C, L = 74 mH, RG = 25 Ω, IAS = 3.5 A (see fig. 12).

DD

c. I

≤ 6.2 A, dI/dt ≤ 80 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.

SD

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91182 www.vishay.com
S-81273-Rev. A, 16-Jun-08 1

600

3.5

500 mJ

3.5 A

4.0 mJ
40 W

- 55 to + 150

d

10 lbf · in

1.1 N · m

V

AT

°C

IRFIBC40G, SiHFIBC40G

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thJC

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

V

Temperature Coefficient

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Drain to Sink Capacitance C f = 1.0 MHz - 12 -

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Drain-Source Body Diode Characteristics

DS

ΔV

DS/TJ

GS(th)

V

GSS

DSS

VGS = 10 V ID = 2.1 A

DS(on)

fs

iss

- 160 -

oss

-30-

rss

g

--8.3

gs

--30

gd

d(on)

r

-55-

d(off)

-20-

f

V

V

GS

-65

-3.1

°C/W

VGS = 0 V, ID = 250 µA 600 - - V

Reference to 25 °C, I

= 1 mA

D

-0.70-

VDS = VGS, ID = 250 µA 2.0 - 4.0 V

= ± 20 V - - ± 100 nA

GS

VDS = 600 V, VGS = 0 V - - 100

= 480 V, VGS = 0 V, TJ = 125 °C - - 500

DS

b

--1.2Ω

VDS = 50 V, ID = 2.1 A 4.9 - - S

VGS = 0 V,

V

= 25 V,

DS

f = 1.0 MHz, see fig. 5

- 1300 -

--60

= 6.2 A, VDS = 360 V,

I

= 10 V

D

see fig. 6 and 13

b

-13-

V

= 300 V, ID = 6.2 A,

DD

R

= 9.1 Ω, RD = 47 Ω,

G

see fig. 10

b

-18-

V/°C

µA

pF

nC Gate-Source Charge Q

ns

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

S

I

SM

SD

rr

rr

on

MOSFET symbol
showing the
integral reverse
p - n junction diode

TJ = 25 °C, IS = 3.5 A, VGS = 0 V

D

G

S

b

TJ = 25 °C, IF = 6.2 A, dI/dt = 100 A/µs

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

--3.5

--14

--1.5V

- 470 940 ns

b

-4.07.9µC

A

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.

www.vishay.com Document Number: 91182
2 S-81273-Rev. A, 16-Jun-08

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

IRFIBC40G, SiHFIBC40G

Vishay Siliconix

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 - Typical Output Characteristics, T

= 150 °C

C

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91182 www.vishay.com
S-81273-Rev. A, 16-Jun-08 3