Vishay IRFI9610G, SiHFI9610G Data Sheet

Power MOSFET

IRFI9610G, SiHFI9610G

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) - 200

(Ω)V

R

DS(on)

Q

(Max.) (nC) 13

g

Q

(nC) 3.2

gs

Q

(nC) 7.3

gd

Configuration Single

= - 10 V 3.0

GS

FEATURES

• Isolated Package

• High Voltage Isolation = 2.5 kV
f = 60 Hz)

• Sink to Lead Creepage Distance = 4.8 mm

• P-Channel

• Dynamic dV/dt Rating

• Low Thermal Resistance

• Lead (Pb)-free Available

TO-220 FULLPAK

S

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

G

designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation

S

D

G

D

P-Channel MOSFET

capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
FULLPAK is mounted to a heatsink using a single clip or by
a single screw fixing.

ORDERING INFORMATION

Package TO-220 FULLPAK

Lead (Pb)-free

SnPb

IRFI9640GPbF
SiHFI9640G-E3
IRFI9640G
SiHFI9640G

(t = 60 s;

RMS

Available

RoHS*

COMPLIANT

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V
Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

a

at - 10 V

GS

C

= 100 °C - 1.3

C

DS

± 20

GS

I

D

IDM - 8.0
Linear Derating Factor 0.22 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt

b

a

a

= 25 °C P

c

C

Operating Junction and Storage Temperature Range T

E

AS

I

AR

E

AR

D

dV/dt - 11 V/ns

, T

J

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I

SD

d. 1.6 mm from case.

= 25 °C, L = 51 mH, RG = 25 Ω, IAS = - 2.0 A (see fig. 12).

J

≤ - 2.0 A, dI/dt ≤ - 250 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91165 www.vishay.com
S09-0011-Rev. A, 19-Jan-09 1

- 200

- 2.0

100 mJ

- 2.0 A

2.7 mJ
27 W

- 55 to + 150

d

10 lbf · in

1.1 N · m

V

AT

°C

IRFI9610G, SiHFI9610G

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thJC

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = - 1 mA - - 0.22 - V/°C

V

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

Internal Source Inductance L

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.

DS

GS(th)

V

GSS

DSS

DS(on)

fs

iss

-66-

oss

-12-

rss

g

--3.2

gs

--7.3

gd

d(on)

r

-19-

d(off)

-15-

f

D

V

DS

VGS = - 10 V ID = - 1.2 A

V

GS

Between lead,
6 mm (0.25") from
package and center of

S

S

I

SM

SD

rr

rr

on

die contact

MOSFET symbol
showing the
integral reverse
p - n junction diode

TJ = 25 °C, IS = - 2.0 A, VGS = 0 V

TJ = 25 °C, IF = - 2.0 A, dI/dt = 100 A/µs

-65

-4.6

°C/W

VGS = 0 V, ID = - 250 µA - 200 - - V

VDS = VGS, ID = - 250 µA - 2.0 - - 4.0 V

= ± 20 V - - ± 100 nA

GS

VDS = - 200 V, VGS = 0 V - - - 100

= - 160 V, VGS = 0 V, TJ = 125 °C - - - 500

VDS = - 50 V, ID = - 1.2 A

VGS = 0 V,

V

= - 25 V,

DS

f = 1.0 MHz, see fig. 5

b

b

--3.0Ω

0.7 - - S

- 180 -

--13

= - 2.0 A, VDS = - 160 V,

I

= - 10 V

D

see fig. 6 and 13

b

-12-

V

= - 100 V, ID = - 2.0 A,

DD

R

= 24 Ω, VGS = - 10 V,

G

see fig. 10

b

D

G

S

D

G

S

b

-17-

-4.5-

-7.5-

--- 2.0

--- 8.0

--- 5.8V

- 130 200 ns

b

- 700 1050 µC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

µA

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

A

www.vishay.com Document Number: 91165
2 S09-0011-Rev. A, 19-Jan-09

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

10

)
A

(
t
n
e

r

r

1

u

C
e

c

r

u

o
S

­o

t

­n

0.1

i
a

r
D

,

D

I

-

0.01

0.1 1 10 100

Fig. 1 - Typical Output Characteristics, TC = 25 °C

VGS

TOP -15V

-10V

-8.0V

-7.0V

-6.0V

-5.5V

-5.0V
BOTTOM -4.5V

20µs PULSE WIDTH
Tj = 25°C

-VDS, Drain-to-Source Voltage (V)

-4.5V

IRFI9610G, SiHFI9610G

Vishay Siliconix

10

)

Α

(

t
n
e

r

r

u

C
e

c

r

u

1

o
S

­o

t

­n

i
a

r
D

,

D

I

-

0

4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0

-VGS, Gate-to-Source Voltage (V)

Fig. 3 - Typical Transfer Characteristics

TJ= 25°C

TJ= 150°C

VDS= -50V

20µs PULSE WIDTH

10

)
A

(
t
n
e

r

r

1

u

C
e

c

r

u

o
S

­o

t

­n

0.1

i
a

r
D

,

D

I

-

VGS

TOP -15V

-10V

-8.0V

-7.0V

-6.0V

-5.5V

-5.0V
BOTTOM -4.5V

-4.5V

20µs PULSE WIDTH

0.01

0.1 1 10 100

Tj = 150°C

-VDS, Drain-to-Source Voltage (V)

Fig. 2 - Typical Output Characteristics, T

= 150 °C

C

2.5

e
c
n
a

t
s

i
s
e

R
n
O
e

c

r

u

o
S

­o

t

­n

i
a

r
D

,

)
n
o

(
S
D

R

ID= -2.0A

V

= -10V

GS

2.0

)
d
e
z

i

1.5

l
a

m

r
o

N

(

1.0

0.5

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ, Junction Temperature (°C)

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91165 www.vishay.com
S09-0011-Rev. A, 19-Jan-09 3