Vishay IRFI820G, SiHFI820G Data Sheet

Power MOSFET

IRFI820G, SiHFI820G

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 500

R

(Ω)V

DS(on)

Q

(Max.) (nC) 24

g

Q

(nC) 3.3

gs

Q

(nC) 13

gd

Configuration Single

TO-220 FULLPAK

= 10 V 3.0

GS

D

FEATURES

• Isolated Package

• High Voltage Isolation = 2.5 kV
f = 60 Hz)

• Sink to Lead Creepage Distance = 4.8 mm

• Dynamic dV/dt Rating

• Low Thermal Resistance

• Lead (Pb)-free Available

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and

G

cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional
insulating hardware in commercial-industrial applications.

S

D

G

N-Channel MOSFET

S

The molding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. The isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
FULLPAK is mounted to a heatsink using a single clip or by
a single screw fixing.

ORDERING INFORMATION

Package TO-220 FULLPAK

Lead (Pb)-free

SnPb

IRFI820GPbF
SiHFI820G-E3
IRFI820G
SiHFI820G

(t = 60 s,

RMS

Available

RoHS*

COMPLIANT

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V
Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

a

at 10 V

GS

C

= 100 °C 1.3

C

DS

± 20

GS

I

D

IDM 8.4
Linear Derating Factor 0.24 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt

b

a

a

= 25 °C P

c

C

Operating Junction and Storage Temperature Range T

E

AS

I

AR

E

AR

D

dV/dt 3.5 V/ns

, T

J

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V

= 50 V, starting TJ = 25 °C, L = 44 mH, RG = 25 Ω, IAS = 2.1 A (see fig. 12).

DD

≤ 2.1 A, dI/dt ≤ 50 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.

c. I

SD

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91158 www.vishay.com
S-81290-Rev. A, 16-Jun-08 1

500

2.1

110 mJ

2.1 A

3.0 mJ
30 W

- 55 to + 150

d

10 lbf · in

1.1 N · m

V

AT

°C

IRFI820G, SiHFI820G

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thJC

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.59 -

V

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Drain to Sink Capacitance C f = 1.0 MHz - 12 -

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

Internal Source Inductance L

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.

DS

GS(th)

V

GSS

DSS

V

DS(on)

fs

iss

-92-

oss

-37-

rss

g

--3.3

gs

--13

gd

d(on)

r

-33-

d(off)

-16-

f

D

V

V

R

Between lead,
6 mm (0.25") from
package and center of

S

S

die contact

MOSFET symbol
showing the

integral reverse

I

SM

SD

rr

rr

on

p - n junction diode

TJ = 25 °C, IF = 2.1 A, dI/dt = 100 A/µs

-65

-4.1

°C/W

VGS = 0 V, ID = 250 µA 500 - -

VDS = VGS, ID = 250 µA 2.0 - 4.0

= ± 20 V - - ± 100 nA

GS

VDS = 500 V, VGS = 0 V - - 25

= 400 V, VGS = 0 V, TJ = 125 °C - - 250

DS

= 10 V ID = 1.3 A

GS

VDS = 50 V, ID = 1.3 A

VGS = 0 V,

V

= 25 V,

DS

f = 1.0 MHz, see fig. 5

b

b

--3.0

1.5 - -

- 360 -

--24

= 2.1 A, VDS = 400 V,

I

= 10 V

GS

D

see fig. 6 and 13

b

-8.0-

V

= 250 V, ID = 2.1 A ,

DD

= 18 Ω, RD = 120 Ω, see fig. 10

G

G

G

TJ = 25 °C, IS = 2.1 A, VGS = 0 V

b

D

S

D

S

b

-8.6-

-4.5-

-7.5-

--2.1

--8.0

--1.6V

- 260 520 ns

b

-0.701.4µC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

V

V/°C

V

µA

Ω

S

pF

nC Gate-Source Charge Q

ns

nH

A

www.vishay.com Document Number: 91158
2 S-81290-Rev. A, 16-Jun-08

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

IRFI820G, SiHFI820G

Vishay Siliconix

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 - Typical Output Characteristics, T

= 150 °C

C

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91158 www.vishay.com
S-81290-Rev. A, 16-Jun-08 3