Vishay IRFI740G, SiHFI740G Data Sheet

Power MOSFET

IRFI740G, SiHFI740G

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 400

R

(Ω)V

DS(on)

Q

(Max.) (nC) 66

g

Q

(nC) 10

gs

Q

(nC) 33

gd

Configuration Single

= 10 V 0.55

GS

FEATURES

• Isolated Package

• High Voltage Isolation = 2.5 kV
f = 60 Hz)

• Sink to Lead Creepage Distance = 4.8 mm

• Dynamic dV/dt Rating

• Low Thermal Resistance

• Compliant to RoHS Directive 2002/95/EC

TO-220 FULLPAK

D

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,

G

ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional
insulating hardware in commercial-industrial applications.

S

D

G

N-Channel MOSFET

S

The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. The isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
FULLPAK is mounted to a heatsink using a single clip or by
a single screw fixing.

ORDERING INFORMATION

Package TO-220 FULLPAK

Lead (Pb)-free

SnPb

IRFI740GPbF
SiHFI740G-E3
IRFI740G
SiHFI740G

(t = 60 s;

RMS

Available

RoHS*

COMPLIANT

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V
Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

a

at 10 V

GS

C

= 100 °C 3.4

C

DS

± 20

GS

I

D

IDM 22
Linear Derating Factor 0.32 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt

b

a

a

= 25 °C P

c

C

Operating Junction and Storage Temperature Range T

E

AS

I

AR

E

AR

D

dV/dt 4.0 V/ns

, T

J

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

= 50 V, starting TJ = 25 °C, L = 23 mH, Rg = 25 Ω, IAS = 5.4 A (see fig. 12).

b. V

DD

c. I

≤ 10 A, dI/dt ≤ 120 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.

SD

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91156 www.vishay.com
S09-2397-Rev. B, 23-Nov-09 1

400

5.4

390 mJ

5.4 A

4.0 mJ
40 W

- 55 to + 150

d

10 lbf · in

1.1 N · m

V

AT

°C

IRFI740G, SiHFI740G

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thJC

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.49 - V/°C

V

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Drain to Sink Capacitance C f = 1.0 MHz - 12 -

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

Internal Source Inductance L

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.

DS

GS(th)

V

GSS

DSS

VGS = 10 V ID = 3.2 A

DS(on)

fs

iss

- 380 -

oss

- 140 -

rss

g

--10

gs

--33

gd

d(on)

r

-54-

d(off)

-24-

f

D

V

V

GS

Between lead,
6 mm (0.25") from
package and center of

S

S

I

SM

SD

rr

rr

on

die contact

MOSFET symbol
showing the

integral reverse
p - n junction diode

TJ = 25 °C, IF = 10 A, dI/dt = 100 A/µs

-65

-3.1

°C/W

VGS = 0 V, ID = 250 µA 400 - - V

VDS = VGS, ID = 250 µA 2.0 - 4.0 V

= ± 20 V - - ± 100 nA

GS

VDS = 400 V, VGS = 0 V - - 25

= 320 V, VGS = 0 V, TJ = 125 °C - - 250

DS

VDS = 50 V, ID = 3.2 A

VGS = 0 V,

V

= 25 V,

DS

f = 1.0 MHz, see fig. 5

b

b

- - 0.55 Ω

3.6 - - S

- 1370 -

--66

= 10 A, VDS = 320 V,

I

= 10 V

D

see fig. 6 and 13

b

-14-

V

= 200 V, ID = 10 A,

DD

R

= 9.1 Ω, RD= 20 Ω,

g

see fig. 10

b

G

G

TJ = 25 °C, IS = 5.4 A, VGS = 0 V

D

S

D

S

b

-25-

-4.5-

-7.5-

--5.4

--22

--2.0V

- 330 730 ns

b

-2.86.6µC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

µA

pF

nC Gate-Source Charge Q

ns

nH

A

www.vishay.com Document Number: 91156
2 S09-2397-Rev. B, 23-Nov-09

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

IRFI740G, SiHFI740G

Vishay Siliconix

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 - Typical Output Characteristics, T

= 150 °C

C

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91156 www.vishay.com
S09-2397-Rev. B, 23-Nov-09 3