Vishay IRFI510G, SiHFI510G Data Sheet

Power MOSFET

S

D

G

TO-220 FULLPAK

IRFI510G, SiHFI510G

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 100

R

()V

DS(on)

Q

(Max.) (nC) 8.3

g

Q

(nC) 2.3

gs

Q

(nC) 3.8

gd

Configuration Single

= 10 V 0.54

GS

D

FEATURES

• Isolated Package

• High Voltage Isolation = 2.5 kV
f = 60 Hz)

• Sink to Lead Creepage Distance = 4.8 mm

• 175 °C Operating Temperature

• Dynamic dV/dt Rating

• Low Thermal Resistance

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third Generation Power MOSFETs from Vishay provides the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost

G

effectiveness.
The TO-220 FULLPAK eliminates the need for additional
insulating hardware in commercial-industrial applications.

S

N-Channel MOSFET

The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
FULLPAK is mounted to a heatsink using a single clip or by
a single screw fixing.

ORDERING INFORMATION

Package TO-220 FULLPAK

Lead (Pb)-free

SnPb

IRFI510GPbF

SiHFI510G-E3
IRFI510G

SiHFI510G

(t = 60 s;

RMS

Available

RoHS*

COMPLIANT

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage

Gate-Source Voltage V

Continuous Drain Current

Pulsed Drain Current

a

VGS at 10 V

TC = 25 °C

T

= 100 °C 3.2

C

Linear Derating Factor 0.18 W/°C

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation T

Peak Diode Recovery dV/dt

b

a

a

= 25 °C P

c

C

Operating Junction and Storage Temperature Range T

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V

= 25 V, starting TJ = 25 °C, L = 4.4 mH, Rg = 25 , IAS = 4.5 A (see fig. 12).

DD

c. I

5.6 A, dI/dt 75 A/s, VDD VDS, TJ 175 °C.

SD

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 90178 www.vishay.com
S10-2325-Rev. B, 11-Oct-10 1

V

100

DS

± 20

GS

I

D

4.5

V

A

IDM 18

E

AS

I

AR

E

AR

D

60 mJ

4.5 A

2.7 mJ

27 W

dV/dt 4.5 V/ns

, T

J

stg

- 55 to + 175

d

°C

10 lbf · in

1.1 N · m

IRFI510G, SiHFI510G

S

D

G

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thJC

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.63 -

V

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Drain to Sink Capacitance C f = 1.0 MHz - 12 -

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

Internal Source Inductance L

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.

DS

GS(th)

V

GSS

DSS

V

DS(on)

fs

iss

-81-

oss

-15-

rss

g

--2.3

gs

--3.8

gd

d(on)

r

-15-

d(off)

-9.4-

f

D

Between lead,
6 mm (0.25") from
package and center of

S

S

die contact

MOSFET symbol
showing the
integral reverse

I

SM

SD

rr

rr

on

p - n junction diode

TJ = 25 °C, IF = 5.6 A, di/dt = 100 A/μs

-65

-5.5

°C/W

VGS = 0 V, ID = 250 μA 100 - -

VDS = VGS, ID = 250 μA 2.0 -

= 20 - -

GS

VDS = 100 V, VGS = 0 V - -

V

= 80 V, VGS = 0 V, TJ = 150 °C - -

DS

= 10 V ID = 2.7 A

GS

VDS = 50 V, ID = 2.7 A

VGS = 0 V

= 25 V

V

DS

b

b

--0.54

1.2 - -

- 180 -

4.0 V

100 nA

25

250

f = 1.0 MHz, see fig. 5

--8.3

V

GS

= 10 V

ID = 5.6 A, VDS = 80 V,

see fig. 6 and 13

b

-6.9-

V

= 50 V, ID = 5.6 A

DD

R

= 24 , RD = 8.4, see fig. 10

g

G

b

D

S

-16-

-4.5-

-7.5-

--4.5

--18

TJ = 25 °C, IS = 4.5 A, VGS = 0 V

b

--

-

b

-

2.5 V

100 200 ns

0.44 0.88 μC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

V

V/°C

μA



S

pF

nC Gate-Source Charge Q

ns

nH

A

www.vishay.com Document Number: 90178
2 S10-2325-Rev. B, 11-Oct-10

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

IRFI510G, SiHFI510G

Vishay Siliconix

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 - Typical Output Characteristics, T

= 175 °C

C

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 90178 www.vishay.com
S10-2325-Rev. B, 11-Oct-10 3