Vishay IRFD9220, SiHFD9220 Data Sheet
www.vishay.com
S
G
D
P-Channel MOSFET
HVMDIP
D
S
G
IRFD9220, SiHFD9220
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) - 200
R
()V
DS(on)
Q
(Max.) (nC) 15
g
(nC) 3.2
Q
gs
Q
(nC) 8.4
gd
Configuration Single
= - 10 V 1.5
GS
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
Available
RoHS*
COMPLIANT
•End Stackable
•P-Channel
• Fast Switching
• Ease of Paralleling
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
Note
* Lead (Pb)-containing terminations are not RoHS-compliant.
Exemptions may apply.
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable
case style which can be stacked in multiple combinations on
standard 0.1" pin centers. The dual drain serves as a thermal
link to the mounting surface for power dissipation levels up
to 1 W.
ORDERING INFORMATION
Package HVMDIP
Lead (Pb)-free
SnPb
IRFD9220PbF
SiHFD9220-E3
IRFD9220
SiHFD9220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
= 25 °C
T
Continuous Drain Current V
Pulsed Drain Current
a
at - 10 V
GS
A
= 100 °C - 0.36
A
DS
± 20
GS
I
D
IDM - 4.5
Linear Derating Factor 0.0083 W/°C
Single Pulse Avalanche Energy
Avalanche Current
a
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
b
a
= 25 °C P
c
A
E
AS
I
AR
E
AR
D
dV/dt - 5.0 V/ns
, T
J
stg
Soldering Recommendations (Peak Temperature) for 10 s 300
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= - 50 V, starting TJ = 25 °C, L = 17.8 mH, Rg = 25 , IAS = - 3 A (see fig. 12).
DD
c. I
- 3.9 A, dI/dt 95 A/μs, VDD VDS, TJ 150 °C.
SD
S12-0617-Rev. D, 26-Mar-12
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
- 200
- 0.56
80 mJ
- 0.56 A
0.10 mJ
1.0 W
- 55 to + 150
d
Document Number: 91141
V
AT
°C
IRFD9220, SiHFD9220
D
S
G
S
D
G
www.vishay.com
d. 1.6 mm from case.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
thJA
- 120 °C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
V
Temperature Coefficient VDS/TJ Reference to 25 °C, ID = - 1 mA - - 0.22 - V/°C
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
DS
GS(th)
V
GSS
DSS
VGS = - 10 V ID = - 0.34 A
DS(on)
fs
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
Internal Source Inductance L
iss
- 110 -
oss
-33-
rss
g
--3.2
gs
--8.4
gd
d(on)
r
-7.3-
d(off)
-19-
f
D
S
VGS = 0 V, ID = - 250 μA - 200 - - V
VDS = VGS, ID = - 250 μA - 2.0 - - 4.0 V
= ± 20 V - - ± 100 nA
GS
VDS = - 200 V, VGS = 0 V - - - 100
V
= - 160 V, VGS = 0 V, TJ = 125 °C - - - 500
DS
b
VDS = - 50 V, ID = - 0.35 A
b
VGS = 0 V,
V
= - 25 V,
DS
f = 1.0 MHz, see fig. 5
= - 2.1 A, VDS = - 160 V,
I
= - 10 V
V
GS
V
R
= 18 , RD = 24 , see fig. 10
g
D
see fig. 6 and 13
= - 100 V, ID = - 3.9 A,
DD
b
b
Between lead,
6 mm (0.25") from
package and center of
die contact
Vishay Siliconix
--1.5
0.55 - - S
- 340 -
--15
-8.8-
-27-
-4.0-
-6.0-
μA
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
nH
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
S
MOSFET symbol
showing the
integral reverse
I
SM
SD
rr
rr
p - n junction diode
TJ = 25 °C, IS = - 0.56 A, VGS = 0 V
b
TJ = 25 °C, IF = - 3.9 A, dI/dt = 100 A/μs
--- 0.56
--- 4.5
--- 6.3V
- 150 300 ns
b
- 0.97 2.0 μC
A
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: hvm@vishay.com
S12-0617-Rev. D, 26-Mar-12
2
Document Number: 91141
www.vishay.com
20 μs PULSE WIDTH
T
A
= 25 °C
20 μs PULSE WIDTH
T
A
= 150 °C
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRFD9220, SiHFD9220
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TA = 25 °C
Fig. 2 - Typical Output Characteristics, T
= 150 °C
A
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
S12-0617-Rev. D, 26-Mar-12
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions, contact: hvm@vishay.com
3
Document Number: 91141
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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