Vishay IRFD9210, SiHFD9210 Data Sheet
S
G
D
P-Channel MOSFET
HVMDIP
D
S
G
Available
RoHS*
COMPLIANT
Power MOSFET
IRFD9210, SiHFD9210
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) - 200
()V
R
DS(on)
Q
(Max.) (nC) 8.9
g
Q
(nC) 2.1
gs
Q
(nC) 3.9
gd
Configuration Single
= - 10 V 3.0
GS
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• P-Channel
• Fast Switching
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
The Power MOSFETs technology is the key to Vishay
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of the Power MOSFETs
design archieve very low on-state resistance combined with
high transconductance and extreme device ruggedness.
The 4 pin DIP package is a low cost machine-insertable case
style which can be stacked in multiple combinations on
standard 0.1
link to the mounting surface for power dissipation levels up to
1 W.
ORDERING INFORMATION
Package HVMDIP
Lead (Pb)-free
SnPb
IRFD9210PbF
SiHFD9210-E3
IRFD9210
SiHFD9210
" pin centers. The dual drain serves as a thermal
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
a
at - 10 V
GS
A
T
= 100 °C - 0.25
A
DS
± 20
GS
I
D
IDM - 3.2
Linear Derating Factor 0.0083 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
b
a
a
= 25 °C P
c
A
E
AS
I
AR
E
AR
D
dV/dt - 5.0 V/ns
, T
J
stg
Soldering Recommendations (Peak Temperature) for 10 s 300
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= - 50 V, starting TJ = 25 °C, L = 123 mH, Rg = 25 , IAS = - 1.6 A (see fig. 12).
DD
c. I
- 2.3 A, dI/dt 70 A/µs, VDD VDS, TJ 150 °C.
SD
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91140 www.vishay.com
S10-2464-Rev. C, 25-Oct-10 1
- 200
- 0.40
210 mJ
- 0.40 A
0.10 mJ
1.0 W
- 55 to + 150
d
V
A
°C
IRFD9210, SiHFD9210
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
thJA
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
Temperature Coefficient
V
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
Internal Source Inductance L
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 µs; duty cycle 2 %.
DS
V
DS/TJ
GS(th)
V
GSS
DSS
VGS = - 10 V ID = - 0.24 A
DS(on)
fs
iss
-54-
oss
-16-
rss
g
--2.1
gs
--3.9
gd
d(on)
r
-11-
d(off)
-13-
f
D
V
V
GS
Between lead,
6 mm (0.25") from
package and center of
S
S
die contact
MOSFET symbol
showing the
integral reverse
I
SM
SD
rr
rr
p - n junction diode
TJ = 25 °C, IF = - 2.3 A, dI/dt = 100 A/µs
- 120 °C/W
VGS = 0 V, ID = - 250 µA - 200 - - V
Reference to 25 °C, I
= - 1 mA
D
- - 0.23 -
VDS = VGS, ID = - 250 µA - 2.0 - - 4.0 V
= ± 20 V - - ± 100 nA
GS
VDS = - 200 V, VGS = 0 V - - - 100
= - 160 V, VGS = 0 V, TJ = 125 °C - - - 500
DS
b
--3.0
VDS = - 50 V, ID = - 0.24 A 0.27 - - S
VGS = 0 V,
= - 25 V,
V
DS
- 170 -
f = 1.0 MHz, see fig. 5
--8.9
= - 1.3 A, VDS = - 160 V
I
= - 10 V
V
TJ = 25 °C, IS = - 0.40 A, VGS = 0 V
D
see fig. 6 and 13
= - 100 V, ID = - 2.3 A
DD
R
= 24 , RD = 41
g
see fig. 10
b
b
-8.0-
-12-
D
G
S
D
G
S
b
-4.0-
-6.0-
- - - 0.40
--- 3.2
--- 5.8V
- 110 220 ns
b
- 0.56 1.1 µC
V/°C
µA
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
nH
A
www.vishay.com Document Number: 91140
2 S10-2464-Rev. C, 25-Oct-10
TA = 25 °C
TA = 150 °C
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRFD9210, SiHFD9210
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TA = 25 °C
Fig. 2 - Typical Output Characteristics, T
= 150 °C
A
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91140 www.vishay.com
S10-2464-Rev. C, 25-Oct-10 3
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