Vishay IRFD9110, SiHFD9110 Data Sheet
Power MOSFET
HVMDIP
D
S
G
IRFD9110, SiHFD9110
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) - 100
()V
R
DS(on)
Q
(Max.) (nC) 8.7
g
(nC) 2.2
Q
gs
Q
(nC) 4.1
gd
Configuration Single
= - 10 V 1.2
GS
S
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
•End Stackable
• P-Channel
• 175 °C Operating Temperature
•Fast Switching
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
G
D
P-Channel MOSFET
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable
case style which can be stacked in multiple combinations on
standard 0.1" pin centers. The dual drain serves as a thermal
link to the mounting surface for power dissipation levels up
to 1 W.
ORDERING INFORMATION
Package HVMDIP
Lead (Pb)-free
SnPb
IRFD9110PbF
SiHFD9110-E3
IRFD9110
SiHFD9110
Available
RoHS*
COMPLIANT
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
a
at - 10 V
GS
A
= 100 °C - 0.49
A
DS
± 20
GS
I
D
IDM - 5.6
Linear Derating Factor 0.0083 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
b
a
a
= 25 °C P
c
A
Operating Junction and Storage Temperature Range T
E
AS
I
AR
E
AR
D
dV/dt - 5.5 V/ns
, T
J
stg
Soldering Recommendations (Peak Temperature) for 10 s 300
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= - 25 V, starting TJ = 25 °C, L = 52 mH, Rg = 25 , IAS = - 2.0 A (see fig. 12).
DD
c. I
- 4.0 A, dI/dt 75 A/μs, VDD VDS, TJ 175 °C.
SD
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91138 www.vishay.com
S10-2464-Rev. C, 25-Oct-10 1
- 100
- 0.70
140 mJ
- 0.7 A
0.13 mJ
1.3 W
- 55 to + 175
d
V
AT
°C
IRFD9110, SiHFD9110
S
D
G
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
thJA
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
Temperature Coefficient
V
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
Internal Source Inductance L
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
DS
V
DS/TJ
GS(th)
V
GSS
DSS
VGS = - 10 V ID = - 0.42 A
DS(on)
fs
iss
-94-
oss
-18-
rss
g
--2.2
gs
--4.1
gd
d(on)
r
-15-
d(off)
-17-
f
D
V
GS
Between lead,
6 mm (0.25") from
package and center of
S
S
I
SM
SD
rr
rr
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IF = - 4.0 A, dI/dt = 100 A/μs
- 120 °C/W
VGS = 0 V, ID = - 250 μA - 100 - - V
Reference to 25 °C, I
= - 1 mA
D
- - 0.091 -
VDS = VGS, ID = - 250 μA - 2.0 - - 4.0 V
= ± 20 V - - ± 100 nA
GS
VDS = - 100 V, VGS = 0 V - - - 100
V
= - 80 V, VGS = 0 V, TJ = 150 °C - - - 500
DS
b
--1.2
VDS = - 50 V, ID = - 0.42 A 0.60 - - S
VGS = 0 V,
= - 25 V,
V
DS
- 200 -
f = 1.0 MHz, see fig. 5
--8.7
= - 4.0 A, VDS = - 80 V
I
= - 10 V
V
D
see fig. 6 and 13
= - 50 V, ID = - 4.0 A
DD
R
= 24 , RD = 11
g
see fig. 10
b
b
-10-
-27-
D
G
S
-4.0-
-6.0-
- - - 0.70
--- 5.6
TJ = 25 °C, IS = - 0.7 A, VGS = 0 V
b
--- 5.5V
- 82 160 ns
b
- 0.15 0.30 μC
V/°C
μA
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
nH
A
www.vishay.com Document Number: 91138
2 S10-2464-Rev. C, 25-Oct-10
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
TA = 25 °C
T
A
= 175 °C
IRFD9110, SiHFD9110
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TA = 25 °C
Fig. 2 - Typical Output Characteristics, T
= 175 °C
A
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91138 www.vishay.com
S10-2464-Rev. C, 25-Oct-10 3
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