Vishay IRFD020, SiHFD020 Data Sheet
N-Channel MOSFET
G
D
S
HVMDIP
D
S
G
Available
RoHS*
COMPLIANT
Power MOSFET
IRFD020, SiHFD020
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 50
R
()V
DS(on)
Q
(Max.) (nC) 24
g
Q
(nC) 7.1
gs
Q
(nC) 7.1
gd
Configuration Single
= 10 V 0.10
GS
FEATURES
• For Automatic Insertion
• Compact, End Stackable
•Fast Switching
• Ease of Paralleling
• Excellent Temperature Stability
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
The HVMDIP technology is the key to Vishay’s advanced
line of power MOSFET transistors. The efficient geometry
and unique processing of the HVMDIP design achieves
very low on-state resistance combined with high
transconductance and extreme device ruggedness.
HVMDIPs feature all of the established advantages of
MOSFETs such as voltage control, very fast switching, ease
of paralleling, and temperature stability of the electrical
parameters.
The HVMDIP 4 pin, dual-in-line package brings the
advantages of HVMDIPs to high volume applications where
automatic PC board insertion is desireable, such as circuit
boards for computers, printers, telecommunications
equipment, and consumer products. Their compatibility with
automatic insertion equipment, low-profile and end
stackable features represent the stat-of-the-art in power
device packaging.
ORDERING INFORMATION
Package HVMDIP
Lead (Pb)-free
SnPb
IRFD020PbF
SiHFD020-E3
IRFD020
SiHFD020
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage
Gate-Source Voltage V
Continuous Drain Current V
Pulsed Drain Current
Linear Derating Factor 0.0080 W/°C
Inductive Current, Clamped L = 100 μH I
Unclamped Inductive Current (Avalanche Current)
Maximum Power Dissipation T
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak Temperature) for 10 s 300
Notes
a. T
= 25 °C to 150 °C
J
b. Repetitive rating; pulse width limited by maximum junction temperature.
c. V
= 25 V, starting TJ = 25 °C, L = 100 μH, Rg = 25
DD
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91465 www.vishay.com
S11-0915-Rev. A, 16-May-11 1
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
a
T
= 25 °C
at 10 V
GS
b
c
This document is subject to change without notice.
C
= 100 °C 1.5
C
= 25 °C P
C
V
DS
± 20
GS
I
D
IDM 19
LM
I
L
D
, T
J
stg
- 55 to + 150
50
2.4
19
2.2
1.0 W
d
www.vishay.com/doc?91000
V
AT
A
°C
IRFD020, SiHFD020
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
thJA
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
b
b
R
b
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
Internal Source Inductance L
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
Body Diode Voltage
a
c
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. V
= 25 V, starting TJ = 25 °C, L = 100 μH, Rg = 25
DD
DS
GS(th)
V
GSS
DSS
I
V
D(on)
VGS = 10 V ID = 1.4 A - 0.080 0.10
DS(on)
g
fs
iss
- 260 -
oss
-44-
rss
g
-4.77.1
gs
-4.77.1
gd
d(on)
r
-1624
d(off)
-2639
f
D
= max. rating x 0.8, VGS = 0 V, TC = 125
V
DS
GS
V
GS
Between lead,
6 mm (0.25") from
package and center of
S
S
die contact
MOSFET symbol
showing the
integral reverse
I
SM
V
SD
rr
rr
on
p - n junction diode
TJ = 25 °C, IF = 15 A, dI/dt = 100 A/μs
- 120 °C/W
VGS = 0 V, ID = 250 μA 50 - - V
VDS = VGS, ID = 250 μA 2.0 - 4.0 V
= ± 20 V - - ± 500 nA
GS
VDS = max. rating, VGS = 0 V - - 250
- - 1000
= 10 V VDS > I
D(on)
x R
max. 2.4 - - A
DS(on)
VDS = 20 V, ID = 7.5 A 4.9 7.3 - S
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz
- 400 -
-1624
= 15 A,
I
= 10 V
D
V
= max. rating x 0.8
DS
-8.713
V
= 25 V, ID = 15 A,
DD
R
= 18 , RD = 1.7
g
D
G
S
D
G
S
-5583
-4.0-
-6.0-
--2.4
--19
TC = 25 °C, IS = 2.4 A, VGS = 0 V - - 1.4 V
57 130 310 ns
0.17 0.34 0.85 μC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
μA
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
nH
A
www.vishay.com Document Number: 91465
2 S11-0915-Rev. A, 16-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRFD020, SiHFD020
Vishay Siliconix
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91465 www.vishay.com
S11-0915-Rev. A, 16-May-11 3
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This document is subject to change without notice.
www.vishay.com/doc?91000
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