Vishay SiHFBF20S, IRFBF20L, SiHFBF20L Data Sheet

D2PAK (TO-263)

I2PAK (TO-262)

IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V) 900

()V

DS(on)

(Max.) (nC) 38

(nC) 4.7

(nC) 21

Configuration Single

= 10 V 8.0

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition

• Surface Mount (IRFBF20S, SiHFBF20S)

•

Low-Profile Through-Hole (IRFBF20L, SiHFBF20L)

•

Available in Tape and Reel (IRFBF20S, SiHFBF20S)

• Dynamic dV/dt Rating

• 150 °C Operating Temperature

•Fast Switching

• Fully Avalanche Rated

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The D

PAK is a surface mount power package capabel of the accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The

N-Channel MOSFET

PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRFBF20L, SiHFBF20L) is available for low-profile applications.

ORDERING INFORMATION

Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262) Lead (Pb)-free and Halogen-free SiHFBF20S-GE3 SiHFBF20STRL-GE3

Lead (Pb)-free

IRFBF20SPbF IRFBF20STRLPbF SiHFBF20S-E3 SiHFBF20STL-E3

Note

a. See device orientation.

SiHFBF20STRR-GE3a SiHFBF20L-GE3

IRFBF20STRRPbFa IRFBF20LPbF

SiHFBF20STR-E3

SiHFBF20L-E3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current V

Pulsed Drain Current Linear Derating Factor 0.43 W/°C

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature) for 10 s

Mounting Torque 6-32 or M3 screw 10 N

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

= 50 V; starting TJ = 25 °C, L = 117 mH, Rg = 25 , IAS = 1.7 A (see fig. 12).

b. V

c. I

 1.7 A, dI/dt  70 A/μs, VDD  VDS, TJ  150 °C.

d. 1.6 mm from case. e. Uses IRFBF20, SiHFBF20 data and test conditions.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91121 S11-1053-Rev. B, 30-May-11 1

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

a,e

VGS

= 25 °C

at 10 V

= 100 °C

IDM

c, e

b, e

= 25 °C

dV/dt 1.5 V/ns

, T

stg

900

± 20

1.7

1.1

6.8

180 mJ

1.7 A

5.4 mJ

3.1

- 55 to + 150

300

°C

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IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient (PCB Mounted, steady-state)

Maximum Junction-to-Case R

Note

a. When mounted on 1" square PCB ( FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 1.1 - mV/°C

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

thJA

thJC

GS(th)

GSS

-40 °C/W

-2.3

VGS = 0, ID = 250 μA 900 - - V

VDS = VGS, ID = 250 μA 2.0 - 4.0 V

= ± 20 V - - ± 100 nA

VDS = 900 V, VGS = 0 V - - 100

DSS

VGS = 10 V ID = 1.0 A

DS(on)

iss

-55-

oss

-18-

rss

--4.7

--21

d(on)

-56-

d(off)

-32-

= 720 V, VGS = 0 V, TJ = 125 °C - - 500

VDS = 50 V, ID = 1.0 A

VGS = 0 V,

= 25 V,

f = 1.0 MHz, see fig. 5

--8.0

0.6 - - S

- 490 -

--38

= 1.7 A, VDS = 360 V,

= 10 V

see fig. 6 and 13

-8.0-

= 450 V, ID = 1.7 A,

= 18 , VGS = 10 V, see fig. 10

-21-

μA

pFOutput Capacitance C

nC Gate-Source Charge Q

www.vishay.com Document Number: 91121 2 S11-1053-Rev. B, 30-May-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L

Vishay Siliconix

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

MOSFET symbol showing the integral reverse p - n junction diode

TJ = 25 °C, IS = 1.7 A, VGS = 0 V

TJ = 25 °C, IF = 1.7 A, dI/dt = 100 A/μs

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %. c. Uses IRFBF20/SiHFBF20 data and test conditions.

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

--1.7

--6.8

--1.5V

- 350 530 ns

- 0.85 1.3 μC

Fig. 1 - Typical Output Characteristics Fig. 2 - Typical Output Characteristics

Document Number: 91121 www.vishay.com S11-1053-Rev. B, 30-May-11 3

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

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IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L

Vishay Siliconix

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

www.vishay.com Document Number: 91121 4 S11-1053-Rev. B, 30-May-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This document is subject to change without notice.

www.vishay.com/doc?91000

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