Vishay IRFBC40A, SiHFBC40A Data Sheet
www.vishay.com
N-Channel MOSFET
G
D
S
TO-220AB
G
D
S
IRFBC40A, SiHFBC40A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) 600
R
()V
DS(on)
Q
max. (nC) 42
g
Q
(nC) 10
gs
Q
(nC) 20
gd
Configuration Single
= 10 V 1.2
GS
FEATURES
• Low gate charge Qg results in simple drive
Requirement
• Improved gate, avalanche and dynamic dV/dt
ruggedness
• Fully characterized capacitance and avalanche voltage
and current
• Effective C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
*
Thi s datasheet pro vi des information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
APPLICATIONS
• Switch mode power supply (SMPS)
• Uninterruptible power supply
• High speed power switching
TYPICAL SMPS TOPOLOGIES
• Single transistor forward
ORDERING INFORMATION
Package TO-220AB
Lead (Pb)-free
SnPb
IRFBC40APbF
SiHFBC40A-E3
IRFBC40A
SiHFBC40A
specified
oss
Available
Available
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
a
at 10 V
GS
C
= 100 °C 3.9
C
DS
± 30
GS
I
D
IDM 25
Linear Derating Factor 1.0 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak temperature)
b
a
a
= 25 °C P
c
d
C
for 10 s 300
E
AS
I
AR
E
AR
D
dV/dt 6.0 V/ns
, T
J
stg
Mounting Torque 6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. ISD 6.2 A, dI/dt 80 A/μs, VDD VDS, TJ 150 °C.
= 25 °C, L = 29.6 mH, Rg = 25 , IAS = 6.2 A (see fig. 12).
J
d. 1.6 mm from case.
S16-0763-Rev. D, 02-May-16
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
600
6.2
570 mJ
6.2 A
13 mJ
125 W
-55 to +150
10 lbf · in
1.1 N · m
Document Number: 91112
V
AT
°C
IRFBC40A, SiHFBC40A
S
D
G
www.vishay.com
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Maximum Junction-to-Case (Drain) R
thJA
thCS
thJC
-62
0.50 -
-1.0
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
V
Temperature Coefficient
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
DS
V
DS/TJ
GS(th)
V
GSS
DSS
VGS = 10 V ID = 3.7 A
DS(on)
fs
Dynamic
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Output Capacitance C
Effective Output Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Gate Input Resistance R
iss
- 136 -
oss
-7.0-
rss
oss
eff. VDS = 0 V to 480 V
oss
g
--10
gs
--20
gd
d(on)
r
-31-
d(off)
-18-
f
g
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
S
I
SM
SD
rr
rr
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IF = 6.2 A, dI/dt = 100 A/μs
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. C
eff. is a fixed capacitance that gives the same charging time as C
oss
VGS = 0 V, ID = 250 μA 600 - - V
Reference to 25 °C, I
= 1 mA
D
VDS = VGS, ID = 250 μA 2.0 - 4.0 V
= ± 30 V - - ± 100 nA
GS
VDS = 600 V, VGS = 0 V - - 25
= 480 V, VGS = 0 V, TJ = 125 °C - - 250
V
DS
b
VDS = 50 V, ID = 3.7 A 3.4 - - S
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
= 1.0 V, f = 1.0 MHz - 1487 -
V
DS
V
V
GS
= 0 V
GS
= 10 V
V
= 480 V, f = 1.0 MHz - 36 -
DS
= 6.2 A, VDS = 480 V
I
D
see fig. 6 and 13
V
= 300 V, ID = 6.2 A
DD
R
= 9.1 , RD = 47
g
see fig. 10
c
b
b
f = 1 MHz, open drain 0.6 - 3.9
TJ = 25 °C, IS = 6.2 A, VGS = 0 V
b
b
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
while VDS is rising from 0 % to 80 % VDS.
oss
Vishay Siliconix
°C/WCase-to-Sink, Flat, Greased Surface R
-0.66-
--1.2
- 1036 -
-48-
--42
-13-
-23-
--6.2
--25
--1.5V
- 431 647 ns
-1.82.8μC
V/°C
μA
pF
nC Gate-Source Charge Q
ns
A
S16-0763-Rev. D, 02-May-16
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: hvm@vishay.com
2
Document Number: 91112
www.vishay.com
VDS, Drain-to-Source Voltage (V)
I
D
, Drain-to-Source Current (A)
0.1
1
10
100
0.01
0.1
1
10
100
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
Top
Bottom
4.5 V
20 µs PULSE WIDTH
TJ = 25 °C
TJ = 25 °C
TJ = 150 °C
5.0
4.0
7.0
6.0
8.0
9.0
10.0
0.1
1
10
100
VGS, Gate-to-Source Voltage (V)
I
D
, Drain-to-Source Current (A)
VDS = 50 V
20 µs PULSE WIDTH
ID = 6.2 A
VGS = 10 V
TJ, Junction Temperature
R
DS(on)
, Drain-to-Source On Resistance (Normalized)
20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-60 -40 -20 0
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRFBC40A, SiHFBC40A
Vishay Siliconix
Fig. 1 - Typical Output Characteristics
100
10
, Drain-to-Source Current (A)
D
I
0.1
VGS
Top
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom
4.5 V
1
1
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
4.5 V
20 µs PULSE WIDTH
TJ = 150 °C
10
Fig. 3 - Typical Transfer Characteristics
100
Fig. 4 - Normalized On-Resistance vs. Temperature
S16-0763-Rev. D, 02-May-16
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3
For technical questions, contact: hvm@vishay.com
Document Number: 91112
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