Vishay IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Data Sheet
D2PAK (TO-263)
G
D
S
I2PAK (TO-262)
G
D
S
IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) 600
()V
R
DS(on)
Q
(Max.) (nC) 31
g
Q
(nC) 4.6
gs
Q
(nC) 17
gd
Configuration Single
= 10 V 2.2
GS
D
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount (IRFBC30S, SiHFBC30S)
• Low-Profile Through-Hole (IRFBC30L, SiHFBC30L)
•
Available in Tape and Reel (IRFBC30S, SiHFBC30S)
• Dynamic dV/dt Rating
• 150 °C Operating Temperature
•Fast Switching
• Fully Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
G
cost-effectiveness.
2
PAK is a surface mount power package capable of
The D
the accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
S
N-Channel MOSFET
on-resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application. The
through-hole version (IRFBC30L, SiHFBC30L) is a available
for low-profile applications.
ORDERING INFORMATION
Package D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262)
Lead (Pb)-free and Halogen-free SiHFBC30S-GE3 SiHFBC30STRL-GE3
Lead (Pb)-free
Note
a. See device orientation.
IRFBC30SPbF IRFBC30STRLPbF
SiHFBC30S-E3 SiHFBC30STL-E3
a
SiHFBC30L-GE3
a
IRFBC30LPbF
a
SiHFBC30L-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a, e
= 25 °C
T
e
VGS at 10 V
C
T
= 100 °C
C
V
DS
V
GS
I
D
IDM
Linear Derating Factor 0.59 W/°C
c, e
b, e
a
= 25 °C
T
A
T
= 25 °C
C
E
AS
I
AR
E
AR
P
D
dV/dt 3.0 V/ns
T
, T
J
stg
Single Pulse Avalanche Energy
Avalanche Current
a
Repetiitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 50 V, starting TJ = 25 °C, L = 41 mH, Rg = 25 , IAS = 3.6 A (see fig. 12).
DD
c. I
3.6 A, dI/dt 60 A/μs, VDD VDS, TJ 150 °C.
SD
d. 1.6 mm from case.
e. Uses IRFBC30, SiHFBC30 data and test conditions.
600
± 20
3.6
2.3
14
290 mJ
3.6 A
7.4 mJ
3.1
74
- 55 to + 150
d
300
V
A
W
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91111
S11-1053-Rev. C, 30-May-11 1
www.vishay.com
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient (PCB
Mounted, steady-state)
a
Maximum Junction-to-Case (Drain) R
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
For recommended footprint and soldering techniques refer to application note #AN-994.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
V
Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Source Inductance L
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. Uses IRFBC30, SiHFBC30 data and test conditions.
a
R
thJA
thJC
DS
GS(th)
V
GSS
-40
°C/W
-1.7
VGS = 0, ID = 250 μA 600 - - V
c
-0.62-V/°C
VDS = VGS, ID = 250 μA 2.0 - 4.0 V
= ± 20 V - - ± 100 nA
GS
VDS = 600 V, VGS = 0 V - - 100
DSS
VGS = 10 V ID = 2.2 A
DS(on)
fs
iss
-86-
oss
-19-
rss
g
--4.6
gs
--17
gd
d(on)
r
-35-
d(off)
-14-
f
S
S
I
SM
SD
rr
rr
on
V
= 480 V, VGS = 0 V, TJ = 125 °C - - 500
DS
VDS = 50 V, ID = 2.2 A
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
b
c
c
--2.2
2.5 - - S
- 660 -
--31
= 3.6 A, VDS = 360 V,
I
V
= 10 V
GS
D
see fig. 6 and 13
b, c
-11-
V
= 300 V, ID = 3.6 A,
DD
R
= 12 , RD = 82 , see fig. 10
g
b, c
-13-
Between lead, and center of die contcat - 7.5 - nH
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IS = 3.6 A, VGS = 0 V
TJ = 25 °C, IF = 3.6 A, dI/dt = 100 A/μs
D
G
S
b
b, c
--3.6
--14
--1.6V
- 370 810 ns
-2.04.2μC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
μA
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
A
www.vishay.com Document Number: 91111
2 S11-1053-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91111 www.vishay.com
S11-1053-Rev. C, 30-May-11 3
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This document is subject to change without notice.
www.vishay.com/doc?91000
IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
www.vishay.com Document Number: 91111
4 S11-1053-Rev. C, 30-May-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This document is subject to change without notice.
www.vishay.com/doc?91000
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