Vishay IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Data Sheet

D2PAK (TO-263)

G

D

S

I2PAK (TO-262)

IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V) 600

R

()V

DS(on)

Q

(Max.) (nC) 23

g

Q

(nC) 5.4

gs

Q

(nC) 11

gd

Configuration Single

= 10 V 2.2

GS

D

FEATURES

• Halogen-free According to IEC 61249-2-21
Definition

• Low Gate Charge Q
Requirement

• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness

• Fully Characterized Capacitance and Avalanche Voltage
and Current

• Effective C

Specified

oss

Results in Simple Drive

g

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

G

S

N-Channel MOSFET

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supply

• High Speed Power Switching

TYPICAL SMPS TOPOLOGIES

• Single Transistor Flyback

ORDERING INFORMATION

Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262)

Lead (Pb)-free and Halogen-free SiHFBC30AS-GE3 SiHFBC30ASTRL-GE3

Lead (Pb)-free

IRFBC30ASPbF IRFBC30ASTRLPbF

SiHFBC30AS-E3 SiHFBC30ASTL-E3

Note

a. See device orientation.

a

SiHFBC30ASTRR-GE3aSiHFBC30AL-GE3

a

IRFBC30ASTRRPbF

a

SiHFBC30ASTR-E3

a

IRFBC30ALPbF

a

SiHFBC30AL-E3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

a, e

at 10 V

GS

C

= 100 °C 2.3

C

DS

± 30

GS

I

D

IDM 14

Linear Derating Factor 0.69 W/°C

c, e

b

a

= 25 °C P

C

Single Pulse Avalanche Energy

Avalanche Current

a

Repetiitive Avalanche Energy

Maximum Power Dissipation T

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range T

E

AS

I

AR

E

AR

D

dV/dt 7.0 V/ns

, T

J

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I

SD

d. 1.6 mm from case.
e. Uses IRFBC30A/SiHFBC30A data and test conditions.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91109
S11-1052-Rev. C, 30-May-11 1

= 25 °C, L = 46 mH, Rg = 25 , IAS = 3.6 A (see fig. 12).

J

 3.6 A, dI/dt  170 A/μs, VDD  VDS, TJ  150 °C.

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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

600

3.6

290 mJ

3.6 A

7.4 mJ

74 W

- 55 to + 150

d

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V

AT

°C

IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient (PCB
Mounted, steady-state)

a

Maximum Junction-to-Case (Drain) R

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Output Capacitance C

Effective Output Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. C

eff. is a fixed capacitance that gives the same charging time as C

oss

d. Uses IRFBC30A/SiHFBC30A data and test conditions.

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2 S11-1052-Rev. C, 30-May-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

a

R

thJA

thJC

DS

GS(th)

V

GSS

-40

-1.7

VGS = 0, ID = 250 μA 600 - - V

d

-0.67-V/°C

VDS = VGS, ID = 250 μA 2.0 - 4.5 V

= ± 30 V - - ± 100 nA

GS

VDS = 600 V, VGS = 0 V - - 25

DSS

VGS = 10 V ID = 2.2 A

DS(on)

fs

iss

-70-

oss

-3.5-

rss

oss

eff. VDS = 0 V to 480 V

oss

g

--5.4

gs

--11

gd

d(on)

r

-19-

d(off)

-12-

f

S

I

SM

SD

rr

rr

on

V

= 480 V, VGS = 0 V, TJ = 125 °C - - 250

DS

b

--2.2

VDS = 50 V, ID = 2.2 A 2.1 - - S

- 510 -

-31-

f = 1.0 MHz, see fig. 5

V

= 0 V

GS

VGS = 0 V,

V

= 25 V,

DS

V

= 1.0 V, f = 1.0 MHz - 730 -

DS

= 480 V, f = 1.0 MHz - 19 -

V

DS

c

--23

= 3.6 A, VDS = 480 V,

I

V

GS

= 10 V

D

see fig. 6 and 13

b

-9.8-

V

= 300 V, ID = 3.6 A,

DD

R

= 12 , RD = 82 , see fig. 10

g

b, d

MOSFET symbol
showing the
integral reverse

G

p - n junction diode

TJ = 25 °C, IS = 3.6 A, VGS = 0 V

b

TJ = 25 °C, IF = 3.6 A, dI/dt = 100 A/μs

D

S

-13-

--3.6

--14

--1.6V

- 400 600 ns

b,

-1.11.7μC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

while VDS is rising from 0 to 80 % VDS.

oss

This document is subject to change without notice.

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°C/W

μA

pF

nC Gate-Source Charge Q

ns

A

0.01

0.1

1

10

100

0.1 1 10 100

20µs PULSE WIDTH
T = 25 C

J

°

TOP

BOTTOM

VGS
15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

DS

D

4.5V

0.1

1

10

0.1 1 10 100

20µs PULSE WIDTH
T = 150 C

J

°

TOP

BOTTOM

VGS
15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

DS

D

4.5V

IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Vishay Siliconix

100

10

°

T = 150 C

J

1

°

T = 25 C

0.1

D

I , Drain-to-Source Current (A)

0.01

4.0 5.0 6.0 7.0 8.0 9.0

J

V = 50V

DS

20µs PULSE WIDTH

V , Gate-to-Source Voltage (V)

GS

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

3.0

2.5

2.0

1.5

(Normalized)

1.0

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

3.6A

I =

D

V =

GS

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

°

Fig. 4 - Normalized On-Resistance vs. Temperature

10V

Document Number: 91109 www.vishay.com
S11-1052-Rev. C, 30-May-11 3

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This document is subject to change without notice.

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1 10 100 1000

VDS, Drain-to-Source Voltage (V)

1

10

100

1000

10000

C

,

C

a

p

a

c

i

t

a

n

c

e

(

p

F

)

Coss

Crss

Ciss

V

GS

= 0V, f = 1 MHZ

C

iss

= C

gs

+ Cgd, C

ds

SHORTED

C

rss

= C

gd

C

oss

= C

ds

+ C

gd

0 4 8 12 16 20 24

0

4

8

12

16

20

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

G

GS

FOR TEST CIRCUIT

SEE FIGURE

I =

D

13

3.6A

V = 120V

DS

V = 300V

DS

V = 480V

DS

0.1

1

10

100

0.4 0.6 0.8 1.0 1.2

V ,Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

SD

SD

V = 0 V

GS

T = 25 C

J

°

T = 150 C

J

°

0.1

1

10

100

10 100 1000 10000

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

Single Pulse

T T= 150 C

= 25 C

°

°

J

C

V , Drain-to-Source Voltage (V)

I , Drain Current (A)I , Drain Current (A)

DS

D

10us

100us

1ms

10ms

IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

www.vishay.com Document Number: 91109
4 S11-1052-Rev. C, 30-May-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area

This document is subject to change without notice.

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