Vishay IRFB9N65A, SiHFB9N65A Data Sheet
TO-220AB
G
D
S
Available
RoHS*
COMPLIANT
Power MOSFET
IRFB9N65A, SiHFB9N65A
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 650
R
()V
DS(on)
Q
(Max.) (nC) 48
g
Q
(nC) 12
gs
Q
(nC) 19
gd
Configuration Single
= 10 V 0.93
GS
D
FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
G
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
S
N-Channel MOSFET
• Single Transistor Flyback
• Single Transistor Forward
ORDERING INFORMATION
Package TO-220AB
Lead (Pb)-free
SnPb
IRFB9N65APbF
SiHFB9N65A-E3
IRFB9N65A
SiHFB9N65A
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
= 25 °C
T
Continuous Drain Current V
Pulsed Drain Current
a
at 10 V
GS
C
= 100 °C 5.4
C
DS
± 30
GS
I
D
IDM 21
Linear Derating Factor 1.3 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
b
a
a
= 25 °C P
C
c
Operating Junction and Storage Temperature Range T
E
AS
I
AR
E
AR
D
dV/dt 2.8 V/ns
, T
J
stg
Soldering Recommendations (Peak Temperature) for 10 s 300
Mounting Torque 6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
SD
= 25 °C, L = 24 mH, Rg = 25 , IAS = 5.2 A (see fig. 12).
J
5.2 A, dI/dt 90 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
650
8.5
325 mJ
5.2 A
16 mJ
167 W
- 55 to + 150
d
10 lbf · in
1.1 N · m
V
AT
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91104 www.vishay.com
S11-0561-Rev. C, 11-Apr-11 1
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This document is subject to change without notice.
www.vishay.com/doc?91000
IRFB9N65A, SiHFB9N65A
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Maximum Junction-to-Case (Drain) R
thJA
thCS
thJC
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
V
Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
Dynamic
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Output Capacitance C
Effective Output Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. C
eff. is a fixed capacitance that gives the same charging time as C
oss
d. Uses SiHFIB5N65A data and test conditions.
DS
GS(th)
V
GSS
DSS
VGS = 10 V ID = 5.1 A
DS(on)
fs
iss
- 177 -
oss
-7.0-
rss
oss
eff. VDS = 0 V to 520 V
oss
g
--12
gs
--19
gd
d(on)
r
-34-
d(off)
-18-
f
S
V
V
V
GS
MOSFET symbol
showing the
integral reverse
I
SM
SD
rr
rr
on
p - n junction diode
TJ = 25 °C, IF = 5.2 A, dI/dt = 100 A/μs
-62
0.50 -
°C/WCase-to-Sink, Flat, Greased Surface R
-0.75
VGS = 0 V, ID = 250 μA 650 - - V
d
- 670 - mV/°C
VDS = VGS, ID = 250 μA 2.0 - 4.0 V
= ± 30 V - - ± 100 nA
GS
VDS = 650 V, VGS = 0 V - - 25
= 520 V, VGS = 0 V, TJ = 125 °C - - 250
DS
b
- - 0.93
VDS = 50 V, ID = 3.1 A 3.9 - - S
VGS = 0 V,
V
DS
f = 1.0 MHz, see fig. 5
V
GS
= 0 V
V
= 25 V,
= 1.0 V, f = 1.0 MHz - 1912 -
DS
= 520 V, f = 1.0 MHz - 48 -
DS
c
- 1417 -
-84-
--48
= 5.2 A, VDS = 400 V
I
= 10 V
D
see fig. 6 and 13
b
-14-
= 325 V, ID = 5.2 A
V
DD
R
= 9.1 ,RD = 62 ,
g
see fig. 10
b
G
TJ = 25 °C, IS = 5.2 A, VGS = 0 V
D
S
b
-20-
--5.2
--21
--1.5V
- 493 739 ns
b
-2.13.2μC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
while VDS is rising from 0 % to 80 % VDS.
oss
μA
pF
nC Gate-Source Charge Q
ns
A
www.vishay.com Document Number: 91104
2 S11-0561-Rev. C, 11-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
0.1
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J
°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
0.1
1
10
100
1 10 100
20µs PULSE WIDTH
T = 150 C
J
°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
0.1
1
10
100
4.0 5.0 6.0 7.0 8.0 9.0
V = 100V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
°
T = 150 C
J
°
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRFB9N65A, SiHFB9N65A
Vishay Siliconix
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
3.0
2.5
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
5.2A
I =
D
V =
GS
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
°
Fig. 4 - Normalized On-Resistance vs. Temperature
10V
Document Number: 91104 www.vishay.com
S11-0561-Rev. C, 11-Apr-11 3
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This document is subject to change without notice.
www.vishay.com/doc?91000
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