Vishay IRFB18N50K, SiHFB18N50K Data Sheet
IRFB18N50K, SiHFB18N50K
Power MOSFET
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 500
(Ω)V
R
DS(on)
Q
(Max.) (nC) 120
g
Q
(nC) 34
gs
Q
(nC) 54
gd
Configuration Single
TO-220
= 10 V 0.26
GS
D
FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage
and Current
•Low R
• Lead (Pb)-free Available
APPLICATIONS
G
S
D
G
N-Channel MOSFET
S
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
• Hard Switched and High Frequency Circuits
ORDERING INFORMATION
Package TO-220
Lead (Pb)-free
SnPb
IRFB18N50KPbF
SiHFB18N50K-E3
IRFB18N50K
SiHFB18N50K
Available
RoHS*
COMPLIANT
DS(on)
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
= 25 °C
T
Continuous Drain Current V
Pulsed Drain Current
a
at 10 V
GS
C
= 100 °C 11
C
DS
± 30
GS
I
D
IDM 68
Linear Derating Factor 1.8 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
b
a
a
= 25 °C P
C
c
E
AS
I
AR
E
AR
D
dV/dt 7.8 V/ns
, T
J
stg
Soldering Recommendations (Peak Temperature) for 10 s 300
Mounting Torque 6-32 or M3 screw 10 N
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. Starting T
c. I
SD
d. 1.6 mm from case.
= 25 °C, L = 2.5 mH, RG = 25 Ω, IAS = 17 A.
J
≤ 17 A, dI/dt ≤ 376 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91100 www.vishay.com
S09-0015-Rev. A, 19-Jan-09 1
500
17
370 mJ
17 A
22 mJ
220 W
- 55 to + 150
d
V
AT
°C
IRFB18N50K, SiHFB18N50K
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
Note
a. R
is measured at TJ approximately 90 °C.
th
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
V
Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.59 - V/°C
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
Dynamic
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Output Capacitance C
Effective Output Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. C
eff. is a fixed capacitance that givs the same charging time as C
oss
www.vishay.com Document Number: 91100
2 S09-0015-Rev. A, 19-Jan-09
a
a
a
R
thJA
thCS
R
thJC
DS
GS(th)
V
GSS
-58
0.50 -
°C/WCase-to-Sink, Flat, Greased Surface R
-0.56
VGS = 0 V, ID = 250 µA 500 - - V
VDS = VGS, ID = 250 µA 3.0 - 5.0 V
= ± 30 V - - ± 100 nA
GS
VDS = 500 V, VGS = 0 V - - 50
DSS
VGS = 10 V ID = 10 A
DS(on)
fs
iss
- 330 -
oss
-38-
rss
oss
eff. VDS = 0 V to 400 V
oss
g
--34
gs
--54
gd
d(on)
r
-45-
d(off)
-30-
f
S
I
SM
SD
rr
rr
on
V
= 400 V, VGS = 0 V, TJ = 125 °C - - 250
DS
b
- 0.26 0.29 Ω
VDS = 50 V, ID = 10 A 6.4 - - S
- 2830 -
- 155 -
f = 1.0 MHz, see fig. 5
V
= 0 V
GS
VGS = 0 V,
V
= 25 V,
DS
= 1.0 V, f = 1.0 MHz - 3310 -
V
DS
V
= 400 V, f = 1.0 MHz - 93 -
DS
c
- - 120
I
= 17 A, VDS = 400 V,
D
see fig. 6 and 13
V
= 10 V
GS
V
= 250 V, ID = 17 A,
DD
R
= 7.5 Ω, see fig. 10
G
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IS = 17 A, VGS = 0 V
TJ = 25 °C, IF = 17 A, dI/dt = 100 A/µs
b
-22-
-60-
b
D
G
S
b
--17
--68
--1.5V
- 520 780 ns
b
-5.38.0µC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
while VDS is rising from 0 to 80 % VDS.
oss
µA
pF
nC Gate-Source Charge Q
ns
A
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
)
A
(
t
n
e
r
r
u
C
e
c
r
u
o
S
o
t
n
i
a
r
D
,
D
I
100
10
1
0.1
0.01
0.001
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
5.0V
20µs PULSE WIDTH
Tj = 25°C
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
t (A)
n
e
r
r
u
C
e
c
r
u
o
S
o
t
n
i
a
r
D
,
I
IRFB18N50K, SiHFB18N50K
Vishay Siliconix
100.00
TJ= 150°C
10.00
1.00
TJ= 25°C
0.10
D
VDS= 100V
0.01
5.0 6.0 7.0 8.0 9.0 10.0
VGS , Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
20µs PULSE WIDTH
100
TOP 15V
10
1
0.1
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
)
A
(
t
n
e
r
r
u
C
e
c
r
u
o
S
o
t
n
i
a
r
D
,
D
I
VGS
5.0V
20µs PULSE WIDTH
Tj = 150°C
0.01
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
R , Drain-to-Source On Resistance
3.0
2.5
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
0.0
17A
I =
D
V =
GS
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Tem perature ( C)
J
°
Fig. 4 - Normalized On-Resistance vs. Temperature
10V
Document Number: 91100 www.vishay.com
S09-0015-Rev. A, 19-Jan-09 3
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