Vishay IRFB17N50L, SiHFB17N50L Data Sheet

TO-220AB

Available

RoHS*

COMPLIANT

IRFB17N50L, SiHFB17N50L

Power MOSFET

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 500

()V

DS(on)

(Max.) (nC) 130

(nC) 33

(nC) 59

Configuration Single

= 10 V 0.28

FEATURES

• Low Gate Charge Qg results in Simple Drive Requirement

• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

• Fully Characterized Capacitance and Avalanche Voltage and Current

•Low t

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

N-Channel MOSFET

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supply

• High Speed Power Switching

• ZVS and High Frequency Circuit

• PWM Inverters

ORDERING INFORMATION

Package TO-220AB

Lead (Pb)-free

SnPb

IRFB17N50LPbF SiHFB17N50L-E3 IRFB17N50L SiHFB17N50L

and Soft Diode Recovery

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

at 10 V

= 100 °C 11

± 30

IDM 64

Linear Derating Factor 1.8 W/°C

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation T

Peak Diode Recovery dV/dt

= 25 °C P

Operating Junction and Storage Temperature Range T

dV/dt 13 V/ns

, T

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting T

c. I

= 25 °C, L = 3.0 mH, Rg = 25 , IAS = 16 A (see fig. 12).

 16 A, dI/dt  347 A/μs, VDD  VDS, TJ  150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91098 www.vishay.com S11-0514-Rev. B, 21-Mar-11 1

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

500

390 mJ

16 A

22 mJ

220 W

- 55 to + 150

10 lbf · in

1.1 N · m

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°C

IRFB17N50L, SiHFB17N50L

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

-62

0.50 -

-0.56

°C/WCase-to-Sink, Flat, Greased Surface R

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.6 - V/°C

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

GS(th)

GSS

DSS

VGS = 10 V ID = 9.9 A

DS(on)

Dynamic

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Output Capacitance C

Effective Output Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

iss

- 325 -

oss

-37-

rss

oss

eff. VGS = 0 V VDS = 0 V to 400 V

oss

--33

--59

d(on)

-50-

d(off)

-28-

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Reverse Recovery Current I

Forward Turn-On Time t

RRM

MOSFET symbol showing the

integral reverse p - n junction diode

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %.

www.vishay.com Document Number: 91098 2 S11-0514-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

VGS = 0 V, ID = 250 μA 500 - - V

VDS = VGS, ID = 250 μA 3.0 - 5.0 V

= ± 30 V - - ± 100 nA

VDS = 500 V, VGS = 0 V - - 50 μA

= 400 V, VGS = 0 V, TJ = 125 °C - - 2.0 mA

VDS = 50 V, ID = 9.9 A

VGS = 0 V,

= 25 V,

f = 1.0 MHz, see fig. 5

= 0 V VDS = 1.0 V , f = 1.0 MHz - 3690 -

= 0 V VDS = 400 V , f = 1.0 MHz - 84 -

- 0.28 0.32 

11 - - S

- 2760 -

- 159 -

- - 130

= 16 A, VDS = 400 V,

= 10 V

see fig. 6 and 13

-21-

= 250 V, ID = 16 A,

= 7.5 , see fig. 10

TJ = 25 °C, IS = 16 A, VGS = 0 V

TJ = 25 °C

= 125 °C - 220 330

TJ = 25 °C - 470 710

= 125 °C - 810 1210

= 16 A, dI/dt = 100 A/μs

-51-

--16

--64

--1.5V

- 170 250

-7.311A

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

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nC Gate-Source Charge Q

VDS, Drain-to-Source Voltage (V)

, Drain-to-Source Current (A)

0.1

100

0.01

0.1

100

VGS 15 V 12 V 10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

Top

Bottom

5.0 V

20 μs PULSE WIDTH TJ = 25 °C

, Drain-to-Source Current (A)

0.1

100

VDS, Drain-to-Source Voltage (V)

0.1

100

VGS 15 V 12 V 10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

Bottom

Top

5.0 V

20 μs PULSE WIDTH TJ = 125 °C

VDS = 50 V 20 μs PULSE WIDTH

TJ = 25 °C

TJ = 150 °C

5.0

4.0

7.0

6.0

8.0

9.0

10.0

0.1

100

VGS, Gate-to-Source Voltage (V)

, Drain-to-Source Current (A)

IRFB17N50L, SiHFB17N50L

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics

Vishay Siliconix

Fig. 3 - Typical Transfer Characteristics

3.0 ID = 16 A

2.5

2.0

1.5

1.0

0.5

, Drain-to-Source On Resistance (Normalized)

VGS = 10 V

100

120

140

160

DS(on)

0.0

- 60

- 40

- 20

TJ, Junction Temperature

Fig. 2 - Typical Output Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91098 www.vishay.com S11-0514-Rev. B, 21-Mar-11 3

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

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