Vishay IRFB13N50A, SiHFB13N50A Data Sheet

TO-220AB

Available

IRFB13N50A, SiHFB13N50A

Power MOSFET

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 500

()V

DS(on)

(Max.) (nC) 81

(nC) 20

(nC) 36

Configuration Single

= 10 V 0.450

FEATURES

• Lower Gate Charge Qg Results in Simpler Drive Reqirements

• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

• Fully Characterized Capacitance and Avalanche Voltage

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

N-Channel MOSFET

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supplies

• High Speed Power Switching

ORDERING INFORMATION

Package TO-220AB

Lead (Pb)-free

SnPb

IRFB13N50APbF SiHFB13N50A-E3 IRFB13N50A SiHFB13N50A

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

at 10 V

= 25 °C

= 100 °C

IDM

Linear Derating Factor 2.0 W/°C

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range

= 25 °C P

dV/dt 9.2 V/ns

, T

stg

Soldering Recommendations (Peak Temperature) for 10 s

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting T

c. I

= 25 °C, L = 5.7 mH, Rg = 25 , IAS =14 A, dV/dt = 7.6 V/ns (see fig. 12a).

 14 A, dI/dt  250 A/μs, VDD  VDS, TJ  150 °C.

d. 1.6 mm from case.

500

± 30

9.1

560 mJ

14 A

25 mJ

250 W

- 55 to + 150

300

10 lbf · in

1.1 N · m

°C

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91095 www.vishay.com S11-0514-Rev. B, 21-Mar-11 1

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

IRFB13N50A, SiHFB13N50A

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

-62

0.50 -

-0.50

°C/WCase-to-Sink, Flat, Greasd Surface R

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.55 - V/°C

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

GS(th)

GSS

DSS

VGS = 10 V ID = 8.4 A

DS(on)

Dynamic

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Output Capacitance C

Effective Output Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

iss

- 290 -

oss

-11-

rss

oss

eff. VDS = 0 V to 400 V

oss

d(on)

-39-

d(off)

-31-

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Body Diode Reverse Recovery Current I

Forward Turn-On Time t

RRM

MOSFET symbol showing the integral reverse p - n junction diode

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %. c. C

eff. is a fixed capacitance that gives the same charging time as C

oss

VGS = 0 V, ID = 250 μA 500 - - V

VDS = VGS, ID = 250 μA 2.0 - 4.0 V

= ± 30 V - - ± 100 nA

VDS = 500 V, VGS = 0 V - - 25

= 400 V, VGS = 0 V, TJ = 125 °C - - 250

- - 0.450 

VDS = 50 V, ID = 8.4 A 8.1 - - S

- 1910 -

- 160 -

f = 1.0 MHz, see fig. 5

= 0 V

VGS = 0 V,

= 25 V,

= 1.0 V, f = 1.0 MHz - 2730 -

= 400 V, f = 1.0 MHz - 82 -

= 14 A, VDS = 400 V,

see fig. 6 and 13

= 10 V

= 250 V, ID = 14 A,

= 7.5,

see fig. 10

-15-

-39-

--14

--56

TJ = 25 °C, IS = 14 A, VGS = 0 V

--1.5V

- 370 550 ns

TJ = 25 °C, IF = 14 A,

= 125 °C, dI/dt = 100 A/μs

-4.46.5μC

-2131A

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

while VDS is rising from 0 % to 80 % VDS.

oss

μA

nC Gate-Source Charge Q

www.vishay.com Document Number: 91095 2 S11-0514-Rev. B, 21-Mar-11

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

, Drain-to-Source Current (A)

91095_01

20 µs Pulse Width T

= 25 °C

4.5 V

VDS, Drain-to-Source Voltage (V)

-2

Bottom

To p

15 V 10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

0.1

Drain-to-Source Voltage (V)

, Drain-to-Source Current (A)

Bottom

To p

15 V 10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width T

= 150 °C

91095_02

4.5 V

0.1

= 14 A

= 10 V

3.0

0.0

0.5

1.0

1.5

2.0

2.5

Junction Temperature (°C)

DS(on)

, Drain-to-Source On Resistance

(Normalized)

91095_04

- 60 - 40 - 20 0 20 40 60 80 100 120 140 160

IRFB13N50A, SiHFB13N50A

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics

TJ = 25 °C

, Drain-to-Source Current (A)

0.1 4

6 8 10 12 14 16

91095_03

Fig. 3 - Typical Transfer Characteristics

Vishay Siliconix

TJ = 150 °C

20 µs Pulse Width V

= 50 V

Gate-to-Source Voltage (V)

Document Number: 91095 www.vishay.com S11-0514-Rev. B, 21-Mar-11 3

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 2 - Typical Output Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

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