Vishay IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L Data Sheet

D2PAK (TO-263)

G

D

S

I2PAK (TO-262)

G

D

S

IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V) - 60

()V

R

DS(on)

Q

(Max.) (nC) 34

g

Q

(nC) 9.9

gs

Q

(nC) 16

gd

Configuration Single

= - 10 V 0.14

GS

FEATURES

• Halogen-free According to IEC 61249-2-21
Definition

• Advanced Process Technology

• Surface Mount (IRF9Z34S, SiHF9Z34S)

•

Low-Profile Through-Hole (IRF9Z34L, SiHF9Z34L)

• 175 °C Operating Temperature

•Fast Switching

• P-Channel

• Fully Avalanche Rated

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay utilize

S

advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer

G

with an extremely efficient and reliable device for use in a
wide variety of applications.

2

PAK is a surface mount power package capable of

The D
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The

D

P-Channel MOSFET

D2PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application.
The through-hole version (IRF9Z34L, SiHF9Z34L) is
available for low-profile applications.

ORDERING INFORMATION

Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262)
Lead (Pb)-free and Halogen-free SiHF9Z34S-GE3 SiHF9Z34STRL-GE3

Lead (Pb)-free

Note

a. See device orientation.

IRF9Z34SPbF IRF9Z34STRLPbF
SiHF9Z34S-E3 SiHF9Z34STL-E3

a

SiHF9Z34STRR-GE3a-

a

a

IRF9Z34STRRPbF
SiHF9Z34STR-E3

a

a

IRF9Z34LPbF
SiHF9Z34L-E3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V
Gate-Source Voltage V

= 25 °C

T

Continuous Drain Current VGS at - 10 V

Pulsed Drain Current

a, e

C

= 100 °C - 13

T

C

DS

± 20

GS

I

D

IDM - 72

Linear Derating Factor 0.59 W/°C

c, e

b, e

a

= 25 °C

T

C

T

= 25 °C 3.7

A

Single Pulse Avalanche Energy
Avalanche Current

a

Repetiitive Avalanche Energy

Maximum Power Dissipation

Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T

E

AS

I

AR

E

AR

P

D

dV/dt - 4.5 V/ns

, T

J

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

= - 25 V, starting TJ = 25 °C, L = 1.3 mH, Rg = 25 , IAS = - 18 A (see fig. 12).

b. V

DD

 - 18 A, dI/dt  170 A/μs, VDD  VDS, TJ  175 °C.

c. I

SD

d. 1.6 mm from case.
e. Uses IRF9Z34, SiHF9Z34 data and test conditions.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91093
S11-1052-Rev. C, 30-May-11 1

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

- 60

- 18

370 mJ

- 18 A

8.8 mJ
88

- 55 to + 175

d

www.vishay.com/doc?91000

V

A

W

°C

IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient (PCB
Mounted, steady-state)

a

Maximum Junction-to-Case (Drain) R

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = - 1 mA

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. Uses IRF9Z34,SiHF9Z34 data and test conditions.

a

R

thJA

thJC

DS

GS(th)

V

GSS

-40
°C/W

-1.7

VGS = 0 V, ID = - 250 μA - 60 - - V

c

- - 0.06 - V/°C

VDS = VGS, ID = - 250 μA - 2.0 - - 4.0 V

= ± 20 V - - ± 100 nA

GS

VDS = - 60 V, VGS = 0 V - - - 100

DSS

VGS = - 10 V ID = - 11 A

DS(on)

fs

iss

- 620 -

oss

- 100 -

rss

g

--9.9

gs

--16

gd

d(on)

r

-20-

d(off)

-58-

f

S

I

SM

SD

rr

rr

on

V

= - 48 V, VGS = 0 V, TJ = 150 °C - - - 500

DS

VDS = - 25 V, ID = - 11 A

VGS = 0 V,

V

= - 25 V,

DS

f = 1.0 MHz, see fig. 5

b

c

c

- - 0.14 

5.9 - - S

- 1100 -

--34

= - 18 A, VDS = - 48 V,

I

V

GS

= - 10 V

D

see fig. 6 and 13

b, c

-18-

V

= - 30 V, ID = - 18 A,

DD

R

= 12 , RD = 1.5 , see fig. 10

g

b, c

MOSFET symbol
showing the
integral reverse

G

p - n junction diode

TJ = 25 °C, IS = - 18 A, VGS = 0 V

b

TJ = 25 °C, IF = - 18 A, dI/dt = 100 A/μs

D

S

- 120 -

--- 18

--- 72

--- 6.3V

- 100 200 ns

b, c

- 280 520 nC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

μA

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

A

www.vishay.com Document Number: 91093
2 S11-1052-Rev. C, 30-May-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

91093_01

20 µs Pulse Width
T

C

= 25 °C

- 4.5 V

- VDS, Drain-to-Source Voltage (V)

- I

D

, Drain Current (A)

10

0

10

1

10

2

10

1

10

0

Bottom

To p

V

GS

- 15 V

- 10 V

- 8.0 V

- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V

- 4.5 V

10

-1

10

-1

10

0

10

1

- V

DS

,

Drain-to-Source Voltage (V)

- I

D

, Drain Current (A)

Bottom

To p

V

GS

- 15 V

- 10 V

- 8.0 V

- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V

- 4.5 V

20 µs Pulse Width
T

C

= 175 °C

91093_02

- 4.5 V

10

2

10

1

10

0

IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

1

10

, Drain Current (A)

D

- I

0

10

91093_03

Vishay Siliconix

25 °C

175 °C

20 µs Pulse Width

= - 25 V

V

DS

4

5678 910

- V

Gate-to-Source Voltage (V)

,

GS

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

2.5
I

= - 18 A

D

= - 10 V

V

GS

2.0

1.5

1.0

(Normalized)

0.5

, Drain-to-Source On Resistance

DS(on)

0.0

R

91093_04

- 60 - 40- 20 0 20 40

T

Junction Temperature (°C)

,

J

60 80 100

120 140 160

Fig. 4 - Normalized On-Resistance vs. Temperature

180

This document is subject to change without notice.

www.vishay.com/doc?91000

Document Number: 91093 www.vishay.com
S11-1052-Rev. C, 30-May-11 3

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT