Vishay IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L Data Sheet

S

G

D

P-Channel MOSFET

D2PAK (TO-263)

G

D

S

I2PAK (TO-262)

G

D

S

IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V) - 60

()V

R

DS(on)

Q

(Max.) (nC) 19

g

Q

(nC) 5.4

gs

Q

(nC) 11

gd

Configuration Single

= - 10 V 0.28

GS

FEATURES

• Halogen-free According to IEC 61249-2-21
Definition

• Advanced Process Technology

• Surface Mount (IRF9Z24S, SiHF9Z24S)

•

Low-Profile Through-Hole (IRF9Z24L, SiHF9Z24L)

• 175 °C Operating Temperature

•Fast Switching

• P-Channel

• Fully Avalanche Rated

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.

2

PAK is a surface mount power package capable of

The D
accommodating die size up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The

2

PAK is suitable for high current applications because of

D
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application.
The through-hole version (IR9Z24L, SiH9Z24L) is available
for low-profile applications.

ORDERING INFORMATION

Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262)
Lead (Pb)-free and Halogen-free SiHF9Z24S-GE3 SiHF9Z24STRL-GE3

Lead (Pb)-free

Note

a. See device orientation.

IRF9Z24SPbF IRF9Z24STRLPbF
SiHF9Z24S-E3 SiHF9Z24STL-E3

a

SiHF9Z24STRR-GE3a

a

IRF9Z24STRRPbFa IRF9Z24LPbF

a

SiHF9Z24STR-E3

a

-

SiHF9Z24L-E3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

a, e

T

= 25 °C

e

VGS at - 10 V

C

= 100 °C - 7.7

T

C

V
V

I

IDM

DS

GS

D

Linear Derating Factor 0.40 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy

b, e

a

a

Maximum Power Dissipation

Peak Diode Recovery dV/dt

c, e

Operating Junction and Storage Temperature Range

= 25 °C

T

A

= 25 °C 60 W

T

C

E

AS

I

AR

E

AR

P

D

dV/dt - 4.5 V/ns

, T

T

J

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

= - 25 V, starting TJ = 25 °C, L = 2.3 mH, Rg = 25 , IAS = - 11 A (see fig. 12).

b. V

DD

 - 11 A, dI/dt  140 A/μs, VDD  VDS, TJ  175 °C.

c. I

SD

d. 1.6 mm from case.
e. Uses IRF9Z24, SiHF9Z24 data and test conditions.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91091
S11-1063-Rev. C, 30-May-11 1

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

- 60

± 20

- 11

- 44

240 mJ

- 11 A

6.0 mJ

3.7 W

- 55 to + 175

d

www.vishay.com/doc?91000

V

A

°C

IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL MIN. TYP. MAX. UNIT

Maximum Junction-to-Ambient
(PCB Mount)

a

Maximum Junction-to-Case (Drain) R

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = - 1 mA

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

Body Diode Voltage V

Drain-Source Body Diode Characteristics

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. Uses IRF9Z24, SiHF9Z24 data and test conditions.

a

R

thJA

thJC

DS

GS(th)

V

GSS

--40
°C/W

--2.5

VGS = 0, ID = - 250 μA - 60 - - V

c

- - 0.056 - V/°C

VDS = VGS, ID = - 250 μA - 2.0 - - 4.0 V

= ± 20 V - - ± 100 nA

GS

VDS = - 60 V, VGS = 0 V - - - 100

DSS

VGS = - 10 V ID = - 6.6 A

DS(on)

fs

iss

- 360 -

oss

-65-

rss

g

--5.4

gs

--11

gd

d(on)

r

-15-

d(off)

-29-

f

S

I

SM

SD

rr

rr

on

V

= - 48 V, VGS = 0 V, TJ = 150 °C - - - 500

DS

VDS = - 25 V, ID = - 6.6 A

VGS = 0 V,

V

= - 25 V,

DS

f = 1.0 MHz, see fig. 5

b

c

- - 0.28 

1.4 - - S

- 570 -

c

--19

= - 11 A, VDS = - 48 V,

I

V

GS

= - 10 V

D

see fig. 6 and 13

b, c

-13-

= - 30 V, ID = - 11 A,

V

DD

R

= 18 , RD = 2.5 , see fig. 10

g

MOSFET symbol
showing the
integral reverse

G

p - n junction diode

TJ = 25 °C, IS = - 11 A, VGS = 0 V

TJ = 25 °C, IF = -11 A, dI/dt = 100 A/μs

b

D

S

b

b, c

-68-

--- 11

--- 44

--- 6.3V

- 100 200 ns

- 320 640 nC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

μA

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

A

www.vishay.com Document Number: 91091
2 S11-1063-Rev. C, 30-May-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

91091_01

20 µs Pulse Width
T

C

= 25 °C

- 4.5 V

- VDS, Drain-to-Source Voltage (V)

- I

D

, Drain Current (A)

10

0

10

1

10

1

10

0

Bottom

To p

V

GS

- 15 V

- 10 V

- 8.0 V

- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V

- 4.5 V

10

-1

20 µs Pulse Width
V

DS

= - 25 V

10

1

10

0

- I

D

, Drain Current (A)

- V

GS

,

Gate-to-Source Voltage (V)

5678 910

4

25 °C

175 °C

91091_03

I

D

= - 11 A

V

GS

= - 10 V

3.0

0.5

1.0

1.5

2.0

2.5

T

J

,

Junction Temperature (°C)

R

DS(on)

, Drain-to-Source On Resistance

(Normalized)

91091_04

- 60 - 40- 20 0 20 40 6080100 120 140 160

180

0.0

IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Vishay Siliconix

, Drain Current (A)

D

- I

91091_02

Document Number: 91091 www.vishay.com
S11-1063-Rev. C, 30-May-11 3

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 1 - Typical Output Characteristics

V

To p

GS

- 15 V

- 10 V

1

10

- 8.0 V

- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V

Bottom

- 4.5 V

0

10

20 µs Pulse Width
T

-1

10

- V

,

DS

0

10

Drain-to-Source Voltage (V)

Fig. 2 - Typical Output Characteristics

- 4.5 V

= 175 °C

C

1

10

This document is subject to change without notice.

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

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