Vishay IRF9Z20, SiHF9Z20 Data Sheet

www.vishay.com

TO-220AB

G

D

S

IRF9Z20, SiHF9Z20

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V) -50

R

()V

DS(on)

Q

max. (nC) 26

g

Q

(nC) 6.2

gs

Q

(nC) 8.6

gd

Configuration Single

= -10 V 0.28

GS

G

P-Channel MOSFET

FEATURES

• P-channel versatility

• Compact plastic package

•Fast switching

• Low drive current

• Ease of paralleling

• Excellent temperature stability

• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

S

D

DESCRIPTION

The power MOSFET technology is the key to Vishay’s
advanced line of power MOSFET transistors. The efficient
geometry and unique processing of the power MOSFET
design achieve very low on-state resistance combined with
high transconductance and extreme device ruggedness.

The P-channel power MOSFETs are designed for
application which require the convenience of reverse
polarity operation. They retain all of the features of the more
common N-channel power MOSFETs such as voltage
control, very fast switching, ease of paralleling, and
excellent temperature stability.

P-channel power MOSFETs are intended for use in power
stages where complementary symmetry with N-channel
devices offers circuit simplification. They are also very useful
in drive stages because of the circuit versatility offered by
the reverse polarity connection. Applications include motor
control, audio amplifiers, switched mode converters, control
circuits and pulse amplifiers.

ORDERING INFORMATION

Package TO-220AB

Lead (Pb)-free IRF9Z20PbF

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

Linear Derating Factor 0.32 W/°C

Inductive Current, Clamped L = 100 μH I

Unclamped Inductive Current (Avalanche current) I

Maximum Power Dissipation T

Operating Junction and Storage Temperature Range T

Soldering Recommendations (Peak temperature)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).

= - 25 V, starting TJ = 25 °C, L =100 μH, Rg = 25 

b. V

DD

c. 0.063" (1.6 mm) from case.

S16-0015-Rev. C, 18-Jan-16

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

a

For technical questions, contact: [e-mail]

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

at - 10 V

GS

c

C

= 100 °C -6.1

C

= 25 °C P

C

for 10 s 300

1

DS

± 20

GS

I

D

IDM -39

LM

L

D

, T

J

stg

-50

-9.7

-39 A

-2.2 A

40 W

-55 to +150

Document Number: 90121

V

AT

°C

IRF9Z20, SiHF9Z20

D

S

G

S

D

G

www.vishay.com

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

-80

1.0 -

-3.1

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

Internal Source Inductance L

DS

GS(th)

V

GSS

DSS

DS(on)

fs

iss

oss

rss

gs

gd

d(on)

r

d(off)

f

D

S

V

DS

VGS = -10 V ID = -5.6 A

- 320 -

-58-

g

V

-4.16.2

-5.78.6

R

g

switching times are essentially independent

-1218

-2538

Between lead,
6 mm (0.25") from
package and center of
die contact

VGS = 0 V, ID = -250 μA -50 - - V

VDS = VGS, ID = -250 μA -2.0 - -4.0 V

= ± 20 V - - ± 500 nA

GS

VDS = max. rating, VGS = 0 V - - -250

= max. rating x 0,8, VGS = 0 V, TJ =125°C - - -1000

b

VDS = 2 x VGS, IDS = -5.6 A

b

VGS = 0 V,

V

= -25 V,

DS

f = 1.0 MHz, see fig. 9

= -9.7 A, VDS = -0.8 max.

I

= -10 V

GS

= 18 , RD = 2.4, see fig. 16 (MOSFET

D

rating. see fig. 17

V

= -25 V, ID = -9.7 A,

DD

of operating temperature)

Vishay Siliconix

°C/WCase-to-Sink, Flat, Greased Surface R

μA

- 0.20 0.28 

2.3 3.5 - S

- 480 -

pFOutput Capacitance C

-1726

nC Gate-Source Charge Q

-8.212

-5786

-4.5-

-7.5-

ns

nH

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

S

I

SM

SD

rr

rr

on

MOSFET symbol
showing the 
integral reverse
p - n junction diode

TJ = 25 °C, IS = - 9.7 A, VGS = 0 V

b

TJ = 25 °C, IF = - 9.7 A, dI/dt = 100 A/μs

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

---9.7

---39

---6.3V

56 110 280 ns

b

0.17 0.34 0.85 μC

A

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).
b. Pulse width  300 μs; duty cycle  2 %.

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: [e-mail]

S16-0015-Rev. C, 18-Jan-16

2

Document Number: 90121

www.vishay.com

Negative I

D

, Drain Current (A)

Negative V

DS

,

Drain-to-Source Voltage (V)

5

90121_03

80 µs Pulse Test

- 4 V

V

GS

= - 10

- 6 V

- 5 V

- 7 V

- 8 V

15

12

0

3

6

9

1

0

4

32

5.0

4.0

3.0

2.0

0.0

1.0

0

4

20

1612

8

90121_06

TJ = 25 °C

TJ = 150 °C

80 µs Pulse Test
V

DS

< - 50 V

g

fs

,Transconductance (S)

Negative I

D

,

Drain Current (A)

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

IRF9Z20, SiHF9Z20

Vishay Siliconix

15

V

= - 10, - 8 V

GS

12

9

, Drain Current (A)

6

D

3

Negative I

0

0

90121_01

5

Negative VDS, Drain-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics

2

10

80 µs Pulse Test

5

= 2 x V

V

DS

2

GS

10

5

2

, Drain Current (A)

D

1

5

Negative I

90121_02

0.1

2

0

TJ = 150 °C

246

Negative V

Gate-to-Source Voltage (V)

,

GS

TJ = 25 °C

Fig. 2 - Typical Transfer Characteristics

80 µs Pulse Test

1510

3

- 7 V

- 6 V

- 5 V

- 4 V

10

5

2

2

10

5

2

10

5

, Drain Current (A)

D

2

1

5

Negative I

2

2520

0.1
110

90121_04

Operation in this area limited

by R

DS(on)

IRF9Z20, SiHF9Z20
IRF9Z22, SiHF9Z22

10 µs

100 µs

IRF9Z20, SiHF9Z20
IRF9Z22, SiHF9Z22

25

TC = 25 °C

= 150 °C

T

J

Single Pulse

25

1 ms

10 ms

DC

Negative VDS, Drain-to-Source Voltage (V)

2

10

Fig. 4 - Maximum Safe Operating Area

8

10

Fig. 5 - Typical Transconductance vs. Drain Current

S16-0015-Rev. C, 18-Jan-16

2

10

5

2

10

TJ = 150 °C

5

2

1

, Reverse Drain Current (A)

Fig. 3 - Typical Saturation Characteristics

DR

5

2

0.1

Negative I

90121_07

08642

Negative VSD, Source-to-Drain Voltage (V)

Fig. 6 - Typical Source-Drain Diode Forward Voltage

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: [e-mail]

3

TJ = 25 °C

Document Number: 90121

10