Vishay IRF9640S, SiHF9640S, IRF9640L, SiHF9640L Data Sheet
www.vishay.com
D2PAK (TO-263)
G
D
S
I2PAK (TO-262)
G
D
S
IRF9640S, SiHF9640S, IRF9640L, SiHF9640L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) -200
R
()V
DS(on)
Q
max. (nC) 44
g
Q
(nC) 7.1
gs
Q
(nC) 27
gd
Configuration Single
= -10 V 0.50
GS
G
S
FEATURES
• Surface mount
• Available in tape and reel
• Dynamic dV/dt rating
• Repetitive avalanche rated
•P-channel
• Fast switching
• Ease of paralleling
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
Note
*
Thi s datasheet pro vi des information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
D
P-Channel MOSFET
cost-effectiveness.
The D2PAK (TO-263) is a surface mount power package. It
provides the highest power capability and the lowest
possible on-resistance in any existing surface mount
package. The D2PAK (TO-263) is suitable for high current
applications because of its low internal connection
resistance and can dissipate up to 2.0 W in a typical surface
mount application. The through-hole version (IRF9640L,
SiHF9640L) is available for low-profile applications.
ORDERING INFORMATION
Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262)
Lead (Pb)-free and Halogen-free SiHF9640S-GE3 - - SiHF9640L-GE3
Lead (Pb)-free
Note
a. See device orientation.
IRF9640SPbF IRF9640STRLPbF
SiHF9640S-E3 SiHF9640STL-E3
a
IRF9640STRRPbF a IRF9640LPbF
a
SiHF9640STR-E3
a
SiHF9640L-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
a
at -10 V
GS
C
= 100 °C -6.8
C
DS
± 20
GS
I
D
IDM -44
Linear Derating Factor 1.0
Linear Derating Factor (PCB mount)
Single Pulse Avalanche Energy
Avalanche Current
a
Repetitive Avalanche Energy
Maximum Power Dissipation T
Maximum Power Dissipation (PCB mount)
Peak Diode Recovery dV/d
c
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak temperature)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= -50 V, starting TJ = 25 °C, L = 8.7 mH, Rg = 25 , IAS = -11 A (see fig. 12).
DD
-11 A, dI/dt 150 A/μs, VDD VDS, TJ 150 °C.
c. I
SD
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
S16-0754-Rev. E, 02-May-16
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
e
b
a
= 25 °C
e
C
TA = 25 °C 3.0
E
AS
I
AR
E
AR
P
D
dV/dt -5.0 V/ns
, T
J
d
for 10 s 300
stg
1
For technical questions, contact: hvm@vishay.com
-200
-11
0.025
700 mJ
-11 A
13 mJ
125
-55 to +150
Document Number: 91087
Available
Available
V
AT
W/°C
W
°C
IRF9640S, SiHF9640S, IRF9640L, SiHF9640L
D
S
G
S
D
G
www.vishay.com
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Maximum Junction-to-Ambient
(PCB mount)
a
Maximum Junction-to-Case (Drain) R
thJA
R
thJA
thJC
-62
-40
-1.0
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
V
Temperature Coefficient VDS/TJ Reference to 25 °C, ID = -1 mA - -0.20 - V/°C
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
DS
GS(th)
V
GSS
DSS
VGS = -10 V ID = 6.6 A
DS(on)
fs
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
Internal Source Inductance L
Gate Input Resistance R
iss
- 370 -
oss
-81-
rss
g
--7.1
gs
--27
gd
d(on)
r
-39-
d(off)
-38-
f
D
S
g
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
S
I
SM
SD
rr
rr
on
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
VGS = 0 V, ID = -250 μA -200 - - V
VDS = VGS, ID = -250 μA -2.0 - -4.0 V
= ± 20 V - - ± 100 nA
GS
VDS = -200 V, VGS = 0 V - - -100
= -160 V, VGS = 0 V, TJ = 125 °C - - -500
V
DS
VDS = -50 V, ID = -6.6 A
b
b
VGS = 0 V,
V
= -25 V,
DS
f = 1.0 MHz, see fig. 5
= -11 A, VDS = -160 V,
I
V
= -10 V
GS
V
R
= 9.1 , RD = 8.6 , see fig. 10
g
D
see fig. 6 and 13
= -100 V, ID = -11 A,
DD
b
b
Between lead,
6 mm (0.25") from
package and center of
die contact
f = 1 MHz, open drain 0.3 - 1.7
MOSFET symbol
showing the
integral reverse
p -n junction diode
TJ = 25 °C, IS = -11 A, VGS = 0 V
TJ = 25 °C, IF = -11 A, dI/dt = 100 A/μs
b
b
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Vishay Siliconix
°C/W
- - 0.50
4.1 - - S
- 1200 -
--44
-14-
-43-
-4.5-
-7.5-
---11
---44
---5.0V
- 250 300 ns
-2.93.6μC
μA
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
nH
A
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: hvm@vishay.com
S16-0754-Rev. E, 02-May-16
2
Document Number: 91087
IRF9640S, SiHF9640S, IRF9640L, SiHF9640L
91087_01
Bottom
To p
V
GS
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
20 µs Pulse Width
T
C
= 25 °C
- 4.5 V
- VDS, Drain-to-Source Voltage (V)
- I
D
, Drain Current (A)
10
0
10
1
10
1
10
0
I
D
= - 11 A
V
GS
= - 10 V
3.0
0.0
0.5
1.0
1.5
2.0
2.5
T
J
,
Junction Temperature (°C)
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
91087_04
- 60 - 40 - 20 0 20 40 6080100 120 140 160
2400
2000
1600
1200
0
400
800
10
0
10
1
Capacitance (pF)
- V
DS
,
Drain-to-Source Voltage (V)
C
iss
C
rss
C
oss
V
GS
= 0 V, f = 1 MHz
C
iss
= Cgs + Cgd, Cds Shorted
C
rss
= C
gd
C
oss
= Cds + C
gd
91087_05
QG, Total Gate Charge (nC)
- V
GS
, Gate-to-Source Voltage (V)
20
16
12
8
0
4
0
10
50
4030
20
V
DS
= - 40 V
V
DS
= - 100 V
For test circuit
see figure 13
V
DS
= - 160 V
91087_06
ID = - 11 A
60
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TC = 25 °C
V
To p
1
10
Bottom
, Drain Current (A)
D
- I
0
10
0
10
91087_02
Fig. 2 - Typical Output Characteristics, T
1
10
GS
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
10
- V
Drain-to-Source Voltage (V)
,
DS
25 °C
150 °C
20 µs Pulse Width
= 150 °C
T
C
1
= 150 °C
C
Fig. 4 - Normalized On-Resistance vs. Temperature
- 4.5 V
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
, Drain Current (A)
D
91087_03
- I
S16-0754-Rev. E, 02-May-16
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
0
10
4
5678910
- V
Gate-to-Source Voltage (V)
,
GS
20 µs Pulse Width
V
= - 50 V
DS
Fig. 3 - Typical Transfer Characteristics
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: hvm@vishay.com
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
3
Document Number: 91087
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