Vishay IRF9630S, SiHF9630S Data Sheet

www.vishay.com

IRF9630S, SiHF9630S

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V) -200

R

()V

DS(on)

Q

max. (nC) 29

g

Q

(nC) 5.4

gs

Q

(nC) 15

gd

Configuration Single

D2PAK (TO-263)

= -10 V 0.80

GS

S

FEATURES

• Surface mount

• Available in tape and reel

• Dynamic dV/dt rating

• Repetitive avalanche rated

•P-channel

• Fast switching

• Ease of paralleling

• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

Note

*

Thi s datasheet pro vi des information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.

G

Please see the information / tables in this datasheet for details.

DESCRIPTION

Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,

D

G

S

D

P-Channel MOSFET

ruggedized device design, low on-resistance and
cost-effectiveness.

2

The D

PAK (TO-263) is a surface mount power package
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.

ORDERING INFORMATION

Package D2PAK (TO-263) D2PAK (TO-263)

Lead (Pb)-free and Halogen-free SiHF9630S-GE3 SiHF9630STRL-GE3

Lead (Pb)-free

Note

a. See device orientation.

IRF9630SPbF IRF9630STRLPbF

SiHF9630S-E3 SiHF9630STL-E3

a

a

a

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

a

at -10 V

GS

C

= 100 °C -4.0

C

DS

± 20

GS

I

D

IDM -26

Linear Derating Factor 0.59

Linear Derating Factor (PCB mount)

Single Pulse Avalanche Energy

Avalanche Current

a

Repetitive Avalanche Energy

Maximum Power Dissipation T

Maximum Power Dissipation (PCB mount)

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range T

Soldering Recommendations (Peak temperature)

e

b

a

= 25 °C

e

c

d

C

TA = 25 °C 3.0

for 10 s 300

E

AS

I

AR

E

AR

P

D

dV/dt -5.0 V/ns

, T

J

stg

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

= -50 V, starting TJ = 25 °C, L = 17 mH, Rg = 25 , IAS = -6.5 A (see fig. 12).

b. V

DD

c. I

 -6.5 A, dI/dt  120 A/μs, VDD  VDS, TJ  150 °C.

SD

d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).

S16-0754-Rev. D, 02-May-16

1

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

-200

-6.5

0.025

500 mJ

-6.4 A

7.4 mJ

74

-55 to +150

Document Number: 91085

Available

Available





V

AT

W/°C

W

°C

IRF9630S, SiHF9630S

D

S

G

S

D

G

www.vishay.com

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Ambient 
(PCB mount)

a

Maximum Junction-to-Case (Drain) R

thJA

R

thJA

thJC

-62

-40

-1.7

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = -1 mA - -0.24 - V/°C

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

DS

GS(th)

V

GSS

DSS

VGS = -10 V ID = -3.9 A

DS(on)

fs

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

iss

- 200 -

oss

-40-

rss

g

--5.4

gs

--15

gd

d(on)

r

-28-

d(off)

-24-

f

D

V

Between lead,
6 mm (0.25") from
package and center of

Internal Source Inductance L

Gate Input Resistance R

S

g

die contact

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

S

I

SM

SD

rr

rr

on

MOSFET symbol
showing the 
integral reverse
p - n junction diode

TJ = 25 °C, IF = -6.5 A, dI/dt = 100 A/μs

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.

VGS = 0, ID = -250 μA -200 - - V

VDS = VGS, ID = -250 μA -2.0 - -4.0 V

= ± 20 V - - ± 100 nA

GS

VDS = -200 V, VGS = 0 V - - - 100

= -160 V, VGS = 0 V, TJ = 125 °C - - -500

V

DS

VDS = -50 V, ID = -3.9 A

b

b

VGS = 0 V,

V

= -25 V,

DS

f = 1.0 MHz, see fig. 5

= -6.5 A, VDS = -160 V,

I

= -10 V

GS

V

R

= 12 , RD = 15 , see fig. 10

g

D

see fig. 6 and 13

= -100 V, ID = -6.5 A,

DD

b

b

f = 1 MHz, open drain 0.6 - 3.7 

TJ = 25 °C, IS = -6.5 A, VGS = 0 V

b

b

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Vishay Siliconix

°C/W

- - 0.80 

2.8 - - S

- 700 -

--29

-12-

-27-

-4.5-

-7.5-

---6.5

---26

---6.5V

- 200 300 ns

-1.92.9μC

μA

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

A

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: [e-mail]

S16-0754-Rev. D, 02-May-16

2

Document Number: 91085

www.vishay.com

91085_01

Bottom

To p

V

GS

- 15 V

- 10 V

- 8.0 V

- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V

- 4.5 V

20 µs Pulse Width
T

C

= 25 °C

- 4.5 V

- VDS, Drain-to-Source Voltage (V)

- I

D

, Drain Current (A)

10

0

10

1

10

1

10

0

10

-1

10

-1

I

D

= - 6.5 A

V

GS

= - 10 V

3.0

0.0

0.5

1.0

1.5

2.0

2.5

T

J

,

Junction Temperature (°C)

R

DS(on)

, Drain-to-Source On Resistance

(Normalized)

91085_04

- 60 - 40 - 20 0 20 40 6080100 120 140 160

1200

1000

800

600

0

200

400

10

0

10

1

Capacitance (pF)

- V

DS

,

Drain-to-Source Voltage (V)

C

iss

C

rss

C

oss

V

GS

= 0 V, f = 1 MHz

C

iss

= Cgs + Cgd, Cds Shorted

C

rss

= C

gd

C

oss

= Cds + C

gd

91085_05

QG, Total Gate Charge (nC)

- V

GS

, Gate-to-Source Voltage (V)

20

16

12

8

0

4

0

5

25

2015

10

V

DS

= - 40 V

V

DS

= - 100 V

For test circuit
see figure 13

V

DS

= - 160 V

91085_06

ID = - 6.5 A

30

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

IRF9630S, SiHF9630S

Vishay Siliconix

Fig. 1 - Typical Output Characteristics, TC = 25 °C

V

To p

1

10

Bottom

0

10

, Drain Current (A)

D

- I

-1

10

-1

10

91085_02

Fig. 2 - Typical Output Characteristics, T

1

10

GS

- 15 V

- 10 V

- 8.0 V

- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V

- 4.5 V

0

10

- V

Drain-to-Source Voltage (V)

,

DS

25 °C

150 °C

- 4.5 V

20 µs Pulse Width

= 150 °C

T

C

1

10

= 150 °C

C

Fig. 4 - Normalized On-Resistance vs. Temperature

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

, Drain Current (A)

D

- I

91085_03

S16-0754-Rev. D, 02-May-16

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

0

10

4

5678910

- V

GS

Gate-to-Source Voltage (V)

,

20 µs Pulse Width
V

= - 50 V

DS

Fig. 3 - Typical Transfer Characteristics

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: [e-mail]

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

3

Document Number: 91085