Vishay IRF9630, SiHF9630 Data Sheet

www.vishay.com

P-Channel MOSFET

TO-220AB

IRF9630, SiHF9630

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V) -200

max. ()V

DS(on)

max. (nC) 29

(nC) 5.4

(nC) 15

Configuration Single

= -10 V 0.80

FEATURES

• Dynamic dV/dt rating

• Repetitive avalanche rated

•P-channel

• Fast switching

• Ease of paralleling

• Simple drive requirements

• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note

Thi s datasheet pro vi des information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details.

DESCRIPTION

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.  The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

ORDERING INFORMATION

Package TO-220AB

Lead (Pb)-free

SnPb

IRF9630PbF

SiHF9630-E3

IRF9630

SiHF9630

Available

  

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

at -10 V

= 100 °C -4.0

± 20

IDM -26

Linear Derating Factor 0.59 W/°C

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation T

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range T

Soldering Recommendations (Peak temperature)

= 25 °C P

for 10 s 300

dV/dt -5.0 V/ns

, T

stg

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. V

= -50 V, starting TJ = 25 °C, L = 17 mH, Rg = 25 , IAS = -6.5 A (see fig. 12).

c. I

 -6.5 A, dI/dt 20 A/μs, VDD  VDS, TJ  150 °C.

d. 1.6 mm from case.

S16-0754-Rev. D, 02-May-16

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

-200

-6.5

500 mJ

-6.4 A

7.4 mJ

74 W

-55 to +150

10 lbf · in

1.1 N · m

Document Number: 91084

°C

IRF9630, SiHF9630

www.vishay.com

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

-62

0.50 -

-1.7

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = -1 mA - -0.24 - V/°C

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

GS(th)

GSS

DSS

VGS = -10 V ID = -3.9 A

DS(on)

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

Internal Source Inductance L

Gate Input Resistance R

iss

- 200 -

oss

-40-

rss

--5.4

--15

d(on)

-28-

d(off)

-24-

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

TJ = 25 °C, IF = -6.5 A, dI/dt = 100 A/μs

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %.

VGS = 0 V, ID = -250 μA -200 - - V

VDS = VGS, ID = -250 μA -2.0 - -4.0 V

= ± 20 V - - ± 100 nA

VDS = -200 V, VGS = 0 V - - -100

= -160 V, VGS = 0 V, TJ = 125 °C - - -500

VDS = -50 V, ID = -3.9 A

VGS = 0 V,

= -25 V,

f = 1.0 MHz, see fig. 5

= -6.5 A,

= -10 V

= -100 V, ID = -6.5 A,

= 12 , RD = 15, see fig. 10

Between lead,

= -160 V,

see fig. 6 and 13

6 mm (0.25") from package and center of die contact

f = 1 MHz, open drain 0.6 - 3.7 

MOSFET symbol showing the  integral reverse

p -n junction diode

TJ = 25 °C, IS = -6.5 A, VGS = 0 V

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Vishay Siliconix

°C/WCase-to-Sink, Flat, Greased Surface R

- - 0.80 

2.8 - - S

- 700 -

--29

-12-

-27-

-4.5-

-7.5-

---6.5

---26

---6.5V

- 200 300 ns

-1.92.9μC

μA

pFOutput Capacitance C

nC Gate-Source Charge Q

S16-0754-Rev. D, 02-May-16

Document Number: 91084

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

www.vishay.com

-1

- V, Drain-to-Source Voltage (V)

- I

, Drain Current (A)

Bottom

To p

- 15 V

- 10 V

- 8.0 V

- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V

- 4.5 V

20 µs Pulse Width T

= 150 °C

91084_02

- 4.5 V

-1

= - 6.5 A

= - 10 V

3.0

0.0

0.5

1.0

1.5

2.0

2.5

Junction Temperature (°C)

DS(on)

, Drain-to-Source On Resistance

(Normalized)

91084_04

- 60 - 40 - 20 0 20 40 6080100 120 140 160

1200

1000

800

600

200

400

Capacitance (pF)

- V

Drain-to-Source Voltage (V)

iss

rss

oss

= 0 V, f = 1 MHz

iss

= Cgs + Cgd, Cds Shorted

rss

= C

oss

= Cds + C

91084_05

QG, Total Gate Charge (nC)

- V

, Gate-to-Source Voltage (V)

2015

= - 40 V

= - 100 V

For test circuit see figure 13

= - 160 V

91084_06

ID = - 6.5 A

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

- 15 V

- 10 V

- 8.0 V

- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V

- 4.5 V

20 µs Pulse Width

= 25 °C

- VDS, Drain-to-Source Voltage (V)

- 4.5 V

, Drain Current (A)

- I

-1

91084_01

To p

Bottom

-1

IRF9630, SiHF9630

Vishay Siliconix

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 - Typical Output Characteristics, T

25 °C

150 °C

= 150 °C

Fig. 4 - Normalized On-Resistance vs. Temperature

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

, Drain Current (A)

- I

91084_03

S16-0754-Rev. D, 02-May-16

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

5678910

- V

Gate-to-Source Voltage (V)

20 µs Pulse Width V

= - 50 V

Fig. 3 - Typical Transfer Characteristics

For technical questions, contact: hvm@vishay.com

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Document Number: 91084

+ 5 hidden pages