Vishay IRF9610, SiHF9610 Data Sheet

Power MOSFET

IRF9610, SiHF9610

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) - 200

(Ω)V

DS(on)

(Max.) (nC) 11

(nC) 7.0

(nC) 4.0

Configuration Single

TO-220

= - 10 V 3.0

FEATURES

• Dynamic dV/dt Rating

• P-Channel

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Lead (Pb)-free Available

DESCRIPTION

The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness.

The TO-220 package is universally preferred for all

P-Channel MOSFET

commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

ORDERING INFORMATION

Package TO-220

Lead (Pb)-free

SnPb

IRF9610PbF SiHF9610-E3 IRF9610 SiHF9610

Available

RoHS*

COMPLIANT

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

= 25

Continuous Drain Current V

Pulsed Drain Current

at - 10 V

= 100

± 20

IDM - 7.0

Linear Derating Factor 0.16 W/°C

Maximum Power Dissipation T

Inductive Current, Clamp I

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range T

= 25 °C P

dV/dt - 5.0 V/ns

, T

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5). b. Not applicable.

c. I

≤ - 1.8 A, dI/dt ≤ 70 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91080 www.vishay.com S09-0046-Rev. A, 19-Jan-09 1

- 200

- 1.8

- 1.0

20 W

- 7.0 A

- 55 to + 150

10 lbf · in

1.1 N · m

°C

IRF9610, SiHF9610

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = - 1 mA - - 0.23 -

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

Internal Source Inductance L

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.

GS(th)

GSS

DSS

DS(on)

iss

-50-

oss

-15-

rss

--7.0

--4.0

d(on)

-10-

d(off)

-8.0-

VGS = - 10 V ID = -0.90 A

Between lead, 6 mm (0.25") from package and center of

die contact

MOSFET symbol showing the integral reverse p - n junction diode

TJ = 25 °C, IS = - 1.8 A, VGS = 0 V

TJ = 25 °C, IF = - 1.8 A, dI/dt = 100 A/µs

-62

0.50 -

°C/WCase-to-Sink, Flat, Greased Surface R

-6.4

VGS = 0 V, ID = - 250 µA - 200 - -

VDS = VGS, ID = - 250 µA - 2.0 -

= ± 20 V - -

VDS = - 200 V, VGS = 0 V - -

= - 160 V, VGS = 0 V, TJ = 125 °C - -

VDS = - 50 V, ID = - 0.90 A

VGS = 0 V,

= - 25 V,

f = 1.0 MHz, see fig. 10

0.90 - -

- 170 -

- 4.0 V

± 100 nA

- 100

- 500

3.0 Ω

--11

= - 3.5 A, VDS = - 160 V,

= - 10 V

see fig. 11 and 18

-8.0-

= - 100 V, ID = - 0.90 A,

= 50 Ω, RD = 110 Ω, see fig. 17

-15-

-4.5-

-7.5-

--- 1.8

--- 7.0

--- 5.8V

- 240 360 ns

-1.72.6µC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

V/°C

µA

pFOutput Capacitance C

nC Gate-Source Charge Q

www.vishay.com Document Number: 91080 2 S09-0046-Rev. A, 19-Jan-09

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

IRF9610, SiHF9610

Vishay Siliconix

, Drain Current (A)

91080_01

, Drain Current (A)

91080_02

- 2.40

= - 10, - 9, - 8, - 7 V

- 1.92

- 1.44

- 0.96

- 0.48

80 µs Pulse Test

0.00

- 10

- 20

- 30 - 40

VDS, Drain-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics

- 2.40

- 1.92

- 1.44

- 0.96

- 0.48

0.00 0 - 4 - 6 - 8 - 10

= - 55 °C

= 25 °C

= 125 °C

80 µs Pulse Test

> I

- 2

Gate-to-Source Voltage (V)

D(on)

Fig. 2 - Typical Transfer Characteristics

x R

DS(on)

- 6 V

- 5 V

- 4 V

max.

- 50

, Drain Current (A)

91080_03

, Drain Current (A)

Negative I

91080_04

- 2.40

= - 10, - 9, - 8 V

- 1.92

- 1.44

- 0.96

- 0.48

80 µs Pulse Test

0.00 0 - 4 - 6 - 8 - 10

- 2

Drain-to-Source Voltage (V)

Fig. 3 - Typical Saturation Characteristics

Operation in this area limited

by R

DS(on)

0.1

110

TC = 25 °C

= 150 °C

Single Pulse

Negative VDS, Drain-to-Source Voltage (V)

Fig. 4 - Maximum Safe Operating Area

- 7 V

- 6 V

- 5 V

- 4 V

µs

100

1 ms

10 ms

2.0

1.0

0.5

D = 0.5

1/t2

thJC

= 6.4 °C/W

(t)

, Normalized Effective Transient

thJC

(t)/R

thJC

91080_05

0.2

0.1

0.05

0.02

Thermal Impedence (Per Unit)

0.01 10

0.2

0.1

0.05

0.02

0.01

25 25 25 25 25 25

-5

Single Pulse (Transient Thermal Impedence)

-4

-3

-2

Notes:

1. Duty Factor, D = t

2. Per Unit Base = R

- TC = PDM Z

3. T

0.1 1.0 10

t1, Square Wave Pulse Duration (s)

Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration

Document Number: 91080 www.vishay.com S09-0046-Rev. A, 19-Jan-09 3

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