Vishay IRF9540S, SiHF9540S Data Sheet

S

G

D

P-Channel MOSFET

Power MOSFET

IRF9540S, SiHF9540S

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) - 100

()V

R

DS(on)

Q

(Max.) (nC) 61

g

Q

(nC) 14

gs

Q

(nC) 29

gd

Configuration Single

= - 10 V 0.20

GS

FEATURES

• Halogen-free According to IEC 61249-2-21
Definition

• Surface Mount

• Available in Tape and Reel

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• P-Channel

• 175 °C Operating Temperature

•Fast Switching

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

D2PAK (TO-263)

D

G

S

Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.

2

The D

PAK (TO-263) is a surface mount power package
capable of accommodating die sizes up to HEX-4. It
provides the highest power capability and the lowest
possible on-resistance in any existing surface mount
package. The D

2

PAK (TO-263) is suitable for high current
applications because of its low internal connection
resistance and can dissipate up to 2.0 W in a typical surface
mount application.

ORDERING INFORMATION

Package D2PAK (TO-263) D2PAK (TO-263)
Lead (Pb)-free and Halogen-free SiHF9540S-GE3 SiHF9540STRL-GE3

Lead (Pb)-free

Note

a. See device orientation.

IRF9540SPbF IRF9540STRLPbF
SiHF9540S-E3 SiHF9540STL-E3

a

a

a

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V
Gate-Source Voltage V

= 25 °C

T

Continuous Drain Current V

Pulsed Drain Current

a

at - 10 V

GS

C

= 100 °C - 13

C

DS

± 20

GS

I

D

IDM - 72
Linear Derating Factor 1.0
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T

e

b

a

a

T

= 25 °C P

e

c

C

E

AS

I

AR

E

AR

D

dV/dt - 5.5 V/ns

, T

J

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V

= - 25 V, starting TJ = 25 °C, L = 2.7 mH, Rg = 25 , IAS = - 19 A (see fig. 12).

DD

c. I

 - 19 A, dI/dt  200 A/μs, VDD  VDS, TJ  175 °C.

SD

d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material)

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91079

www.vishay.com

S11-1051-Rev. C, 30-May-11 1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

- 100

- 19

0.025
640 mJ

- 19 A

15 mJ

150

3.7

- 55 to + 175

d

www.vishay.com/doc?91000

V

AT

W/°C

W

°C

IRF9540S, SiHF9540S

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL MIN. TYP. MAX. UNIT

Maximum Junction-to-Ambient
(PCB Mount)

a

Maximum Junction-to-Case (Drain) R

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = - 1 mA - - 0.087 - V/°C

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

Internal Source Inductance L

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.

a

R

thJA

thJC

DS

GS(th)

V

GSS

--40
°C/W

--1.0

VGS = 0, ID = - 250 μA - 100 - - V

VDS = VGS, ID = - 250 μA - 2.0 - - 4.0 V

= ± 20 V - - ± 100 nA

GS

VDS = - 100 V, VGS = 0 V - - - 100

DSS

VGS = - 10 V ID = - 11 A

DS(on)

fs

iss

- 590 -

oss

- 140 -

rss

g

--14

gs

--29

gd

d(on)

r

-34-

d(off)

-57-

f

D

S

S

I

SM

SD

rr

rr

on

V

= - 80 V, VGS = 0 V, TJ = 150 °C - - - 500

DS

b

- - 0.20 

VDS = - 50 V, ID = - 11 A 6.2 - - S

VGS = 0 V,

V

= - 25 V,

DS

f = 1.0 MHz, see fig. 5

- 1400 -

--61

= - 19 A, VDS = - 80 V,

I

V

GS

= - 10 V

D

see fig. 6 and 13

b

-16-

V

= - 50 V, ID = - 19 A,

DD

R

= 9.1 , RD = 2.4 , see fig. 10

G

Between lead,

D

6 mm (0.25") from
package and center of
die contact

MOSFET symbol
showing the
integral reverse
p - n junction diode

TJ = 25 °C, IS = - 19 A, VGS = 0 V

G

S

D

G

S

b

TJ = 25 °C, IF = - 19 A, dI/dt = 100 A/μs

b

-73-

-4.5-

-7.5-

--- 19

--- 72

--- 5.0V

- 130 260 ns

b

- 0.35 0.70 nC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

μA

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

A

www.vishay.com Document Number: 91079
2 S11-1051-Rev. C, 30-May-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

91079_01

20 µs Pulse Width
T

C

= 25 °C

- 4.5 V

- VDS, Drain-to-Source Voltage (V)

- I

D

, Drain Current (A)

10

0

10

1

10

2

10

1

Bottom

To p

V

GS

- 15 V

- 10 V

- 8.0 V

- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V

- 4.5 V

10

1

10

0

10

1

- V

DS

,

Drain-to-Source Voltage (V)

- I

D

, Drain Current (A)

20 µs Pulse Width
T

C

= 175 °C

91079_02

- 4.5 V

Bottom

To p

V

GS

- 15 V

- 10 V

- 8.0 V

- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V

- 4.5 V

20 µs Pulse Width
V

DS

= - 50 V

10

1

- I

D

, Drain Current (A)

- V

GS

,

Gate-to-Source Voltage (V)

5678

9

10

4

25 °C

175 °C

91079_03

I

D

= - 19 A

V

GS

= - 10 V

3.0

0.0

0.5

1.0

1.5

2.0

2.5

T

J

,

Junction Temperature (°C)

R

DS(on)

, Drain-to-Source On Resistance

(Normalized)

91079_04

- 60- 40 - 20 0 20 40 6080100 120140 160

180

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

IRF9540S, SiHF9540S

Vishay Siliconix

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 - Typical Output Characteristics, T

= 175 °C

C

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91079 www.vishay.com
S11-1051-Rev. C, 30-May-11 3

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This document is subject to change without notice.

www.vishay.com/doc?91000