Vishay IRF9530S, SiHF9530S Data Sheet

S

G

D

P-Channel MOSFET

Power MOSFET

IRF9530S, SiHF9530S

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) - 100

()V

R

DS(on)

Q

(Max.) (nC) 38

g

(nC) 6.8

Q

gs

Q

(nC) 21

gd

Configuration Single

= - 10 V 0.30

GS

FEATURES

• Halogen-free According to IEC 61249-2-21
Definition

• Surface Mount

• Available in Tape and Reel

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• P-Channel

• 175 °C Operating Temperature

•Fast Switching

• Compliant to RoHS Directive 2002/95/EC

D2PAK (TO-263)

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.

2

The D

PAK (TO-263) is a surface mount power package

capable of accommodating die sizes up to HEX-4. It

D

G

S

provides the highest power capability and the lowest
possible on-resistance in any existing surface mount
package. The D

2

PAK (TO-263) is suitable for high current
applications because of its low internal connection
resistance and can dissipate up to 2.0 W in a typical surface
mount application.

ORDERING INFORMATION

Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263)
Lead (Pb)-free and Halogen-free SiHF9530S-GE3 SiHF9530STRL-GE3

Lead (Pb)-free

IRF9530SPbF IRF9530STRLPbF
SiHF9530S-E3 SiHF9530STL-E3

Note

a. See device orientation.

a

SiHF9530STRR-GE3a

a

IRF9530STRRPbFa

a

SiHF9530STR-E3

a

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V
Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

a

at - 10 V

GS

C

T

= 100 °C - 8.2

C

DS

± 20

GS

I

D

IDM - 48
Linear Derating Factor 0.59
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Avalanche Current

a

Repetiitive Avalanche Energy
Maximum Power Dissipation T
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T

e

b

a

= 25 °C

e

c

C

TA = 25 °C 3.7

E

AS

I

AR

E

AR

P

D

dV/dt - 5.5 V/ns

, T

J

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

= - 25 V, starting TJ = 25 °C, L = 4.2 mH, Rg = 25 , IAS = - 12 A (see fig. 12).

b. V

DD

c. ISD  - 12 A, dI/dt  140 A/μs, VDD  VDS, TJ  175 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91077

www.vishay.com

S11-1051-Rev. C, 30-May-11 1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

- 100

- 12

0.025
400 mJ

- 12 A

8.8 mJ
88

- 55 to + 175

d

www.vishay.com/doc?91000

V

A

W/°C

W

°C

IRF9530S, SiHF9530S

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Ambient
(PCB Mount)

a

Maximum Junction-to-Case (Drain) R

thJA

R

thJA

thJC

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = - 1 mA - - 0.10 - V/°C

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

Internal Source Inductance L

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.

www.vishay.com Document Number: 91077
2 S11-1051-Rev. C, 30-May-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

DS

GS(th)

V

GSS

DSS

VGS = - 10 V ID = - 7.2 A

DS(on)

fs

iss

- 340 -

oss

-93-

rss

g

--6.8

gs

--21

gd

d(on)

r

-31-

d(off)

-39-

f

D

V

V

GS

R

Between lead,
6 mm (0.25") from
package and center of

S

S

die contact

MOSFET symbol
showing the
integral reverse

I

SM

SD

rr

rr

on

p - n junction diode

TJ = 25 °C, IS = - 12 A, VGS = 0 V

TJ = 25 °C, IF = - 12 A, dI/dt = 100 A/μs

This document is subject to change without notice.

-62

-40

°C/W

-1.7

VGS = 0, ID = - 250 μA - 100 - - V

VDS = VGS, ID = - 250 μA - 2.0 - - 4.0 V

= ± 20 V - - ± 100 nA

GS

VDS = - 100 V, VGS = 0 V - - - 100

= - 80 V, VGS = 0 V, TJ = 150 °C - - - 500

DS

VDS = - 50 V, ID = - 7.2 A

VGS = 0 V,

V

= - 25 V,

DS

f = 1.0 MHz, see fig. 5

b

b

- - 0.30 

3.7 - - S

- 860 -

--38

= - 12 A, VDS = - 80 V,

I

= - 10 V

D

see fig. 6 and 13

b

-12-

V

= - 50 V, ID = - 12 A,

DD

= 12 , RD = 3.9 , see fig. 10

G

G

G

b

D

S

D

S

b

-52-

-4.5-

-7.5-

--- 12

--- 48

--- 6.3V

- 120 240 ns

b

- 0.46 0.92 μC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

www.vishay.com/doc?91000

μA

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

A

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

V

To p

1

10

Bottom

, Drain Current (A)

D

- I

0

10

-1

10

91077_01

Fig. 1 - Typical Output Characteristics, TC = 25 °C

GS

- 15 V

- 10 V

- 8.0 V

- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V

- 4.5 V

- 4.5 V

20 µs Pulse Width

= 25 °C

T

C

0

10

1

10

- VDS, Drain-to-Source Voltage (V)

91077_03

1

10

, Drain Current (A)

D

- I

0

10

4

Fig. 3 - Typical Transfer Characteristics

IRF9530S, SiHF9530S

Vishay Siliconix

25 °C

175 °C

20 µs Pulse Width
V

= - 50 V

DS

5678910

- V

Gate-to-Source Voltage (V)

,

GS

V

To p

GS

- 15 V

- 10 V

- 8.0 V

- 7.0 V

- 6.0 V

Bottom

-1

- 5.5 V

- 5.0 V

- 4.5 V

0

10

- V

Drain-to-Source Voltage (V)

,

DS

1

10

, Drain Current (A)

D

- I

0

10

10

91077_02

Fig. 2 - Typical Output Characteristics, T

- 4.5 V

20 µs Pulse Width

= 175 °C

T

C

1

10

= 175 °C

C

3.0
I

= - 12 A

D

= - 10 V

V

GS

2.5

2.0

1.5

(Normalized)

1.0

, Drain-to-Source On Resistance

0.5

DS(on)

0.0

R

- 60- 40 - 20 0 20 40 60 80 100 120 140 160 180

T

Junction Temperature (°C)

91077_04

,

J

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91077 www.vishay.com
S11-1051-Rev. C, 30-May-11 3

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000