Vishay SiHF9520S Data Sheet

S

G

D

P-Channel MOSFET

Power MOSFET

IRF9520S, SiHF9520S

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) - 100

()V

R

DS(on)

Q

(Max.) (nC) 18

g

Q

(nC) 3.0

gs

Q

(nC) 9.0

gd

Configuration Single

= - 10 V 0.60

GS

FEATURES

• Halogen-free According to IEC 61249-2-21
Definition

• Surface Mount

• Available in Tape and Reel

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• P-Channel

• 175 °C Operating Temperature

•Fast Switching

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

D2PAK (TO-263)

D

G

S

Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.

2

The D

PAK (TO-263) is a surface mount power package
capable of accommodating die sizes up to HEX-4. It
provides the highest power capability and the lowest
possible on-resistance in any existing surface mount
package. The D

2

PAK (TO-263) is suitable for high current
applications because of its low internal connection
resistance and can dissipate up to 2.0 W in a typical surface
mount application.

ORDERING INFORMATION

Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263)

a

Lead (Pb)-free and Halogen-free SiHF9520S-GE3 SiHF9520STRL-GE3

Lead (Pb)-free

Note

a. See device orientation.

IRF9520SPbF IRF9520STRLPbF
SiHF9520S-E3 SiHF9520STL-E3

SiHF9520STRR-GE3a

a

IRF9520STRRPbFa

a

SiHF9520STR-E3

a

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V
Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

a

at - 10 V

GS

C

= 100 °C - 4.8

C

DS

± 20

GS

I

D

IDM - 27
Linear Derating Factor 0.40
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Avalanche Current

a

Repetiitive Avalanche Energy
Maximum Power Dissipation T
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T

e

b

a

= 25 °C

e

c

C

TA = 25 °C 3.7

E

AS

I

AR

E

AR

P

D

dV/dt - 5.5 V/ns

, T

J

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V

= - 25 V, starting TJ = 25 °C, L = 9.7 mH, Rg = 25 , IAS = - 6.8 A (see fig. 12).

DD

c. I

 - 6.8 A, dI/dt  110 A/μs, VDD  VDS, TJ  175 °C.

SD

d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91075

www.vishay.com

S11-1050-Rev. C, 30-May-11 1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

- 100

- 6.8

0.025
300 mJ

- 6.8 A

6.0 mJ
60

- 55 to + 175

d

www.vishay.com/doc?91000

V

AT

W/°C

W

°C

IRF9520S, SiHF9520S

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Ambient
(PCB Mount)

a

Maximum Junction-to-Case (Drain) R

thJA

R

thJA

thJC

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = - 1 mA - - 0.1 - V/°C

V

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

Internal Source Inductance L

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.

www.vishay.com Document Number: 91075
2 S11-1050-Rev. C, 30-May-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

DS

GS(th)

V

GSS

DSS

VGS = - 10 V ID = - 4.1 A

DS(on)

fs

iss

- 170 -

oss

-45-

rss

g

--3.0

gs

--9.0

gd

d(on)

r

-21-

d(off)

-25-

f

D

V

V

GS

R

Between lead,
6 mm (0.25") from
package and center of

S

S

die contact

MOSFET symbol
showing the
integral reverse

I

SM

SD

rr

rr

on

p - n junction diode

TJ = 25 °C, IS = - 6.8 A, VGS = 0 V

TJ = 25 °C, IF = - 6.8 A, dI/dt = 100 A/μs

This document is subject to change without notice.

-62

-40

°C/W

-2.5

VGS = 0, ID = - 250 μA - 100 - - V

VDS = VGS, ID = - 250 μA - 2.0 - - 4.0 V

= ± 20 V - - ± 100 nA

GS

VDS = - 100 V, VGS = 0 V - - - 100

= - 80 V, VGS = 0 V, TJ = 150 °C - - - 500

DS

VDS = - 50 V, ID = - 4.1 A

VGS = 0 V,

V

= - 25 V,

DS

f = 1.0 MHz, see fig. 5

b

b

- - 0.60 

2.0 - - S

- 390 -

--18

= - 6.8 A, VDS = - 80 V,

I

= - 10 V

D

see fig. 6 and 13

b

-9.6-

V

= - 50 V, ID = - 6.8 A,

DD

= 18 , RD = 7.1 , see fig. 10

G

G

G

b

D

S

D

S

b

-29-

-4.5-

-7.5-

--- 6.8

--- 27

--- 6.3V

- 98 200 ns

b

- 0.33 0.66 μC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

www.vishay.com/doc?91000

μA

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

A

91075_01

20 µs Pulse Width
T

C

= 25 °C

- 4.5 V

- VDS, Drain-to-Source Voltage (V)

- I

D

, Drain Current (A)

10

0

10

1

10

1

10

0

Bottom

To p

V

GS

- 15 V

- 10 V

- 8.0 V

- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V

- 4.5 V

10

1

10

0

10

0

10

1

- V

DS

,

Drain-to-Source Voltage (V)

- I

D

, Drain Current (A)

20 µs Pulse Width
T

C

= 175 °C

91075_02

- 4.5 V

Bottom

To p

V

GS

- 15 V

- 10 V

- 8.0 V

- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V

- 4.5 V

20 µs Pulse Width
V

DS

= - 50 V

10

1

10

0

- I

D

, Drain Current (A)

- V

GS

,

Gate-to-Source Voltage (V)

5678910

4

25 °C

175 °C

91075_03

I

D

= - 6.8 A

V

GS

= - 10 V

3.0

0.0

0.5

1.0

1.5

2.0

2.5

T

J

,

Junction Temperature (°C)

R

DS(on)

, Drain-to-Source On Resistance

(Normalized)

91075_04

- 60- 40 - 20 0 20 40 60 80 100 120 140 160 180

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

IRF9520S, SiHF9520S

Vishay Siliconix

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 - Typical Output Characteristics, T

= 175 °C

C

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91075 www.vishay.com
S11-1050-Rev. C, 30-May-11 3

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This document is subject to change without notice.

www.vishay.com/doc?91000