Vishay IRF830A, SiHF830A Data Sheet
N-Channel MOSFET
G
D
S
TO-220AB
G
D
S
Available
RoHS*
COMPLIANT
Power MOSFET
IRF830A, SiHF830A
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 500
R
(Ω)V
DS(on)
Q
(Max.) (nC) 24
g
Q
(nC) 6.3
gs
Q
(nC) 11
gd
Configuration Single
= 10 V 1.4
GS
FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Effective C
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptable Power Supply
• High Speed power Switching
TYPICAL SMPS TOPOLOGIES
• Two Transistor Forward
•Half Bridge
• Full Bridge
ORDERING INFORMATION
Package TO-220AB
Lead (Pb)-free
SnPb
IRF830APbF
SiHF830A-E3
IRF830A
SiHF830A
Specified
oss
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
a
at 10 V
GS
C
= 100 °C 3.2
C
DS
± 30
GS
I
D
IDM 20
Linear Derating Factor 0.59 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
b
a
a
= 25 °C P
c
C
E
AS
I
AR
E
AR
D
dV/dt 5.3 V/ns
, T
J
stg
Soldering Recommendations (Peak Temperature) for 10 s 300
Mounting Torque 6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
SD
d. 1.6 mm from case.
= 25 °C, L = 18 mH, Rg = 25 Ω, IAS = 5.0 A (see fig. 12).
J
≤ 5.0 A, dI/dt ≤ 370 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91061 www.vishay.com
S11-0507-Rev. C, 21-Mar-11 1
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
500
5.0
230 mJ
5.0 A
7.4 mJ
74 W
- 55 to + 150
d
10 lbf · in
1.1 N · m
www.vishay.com/doc?91000
V
AT
°C
IRF830A, SiHF830A
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Maximum Junction-to-Case (Drain) R
thJA
thCS
thJC
-62
0.50 -
-1.7
°C/WCase-to-Sink, Flat, Greased Surface R
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.60 -
V
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
DS
GS(th)
V
GSS
DSS
VGS = 10 V ID = 3.0 A
DS(on)
fs
Dynamic
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Output Capacitance C
Output Capacitance C
Effective Output Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
iss
-93-
oss
-4.3-
rss
V
oss
V
oss
eff. VGS = 0 V; VDS = 0 V to 400 V
oss
g
--6.3
gs
--11
gd
d(on)
r
-21-
d(off)
-15-
f
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
S
I
SM
SD
rr
rr
on
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
c. C
eff. is a fixed capacitance that gives the same charging time as C
oss
VGS = 0 V, ID = 250 μA 500 - -
VDS = VGS, ID = 250 μA 2.0 -
= ± 30 V - -
GS
VDS = 500 V, VGS = 0 V - -
= 400 V, VGS = 0 V, TJ = 125 °C - -
V
DS
VDS = 50 V, ID = 3.0 A
VGS = 0 V,
= 25 V,
V
DS
b
b
--
2.8 - -
-620-
4.5 V
± 100 nA
25
250
1.4 Ω
f = 1.0 MHz, see fig. 5
= 0 V; VDS = 1.0 V, f = 1.0 MHz 886
GS
= 0 V; VDS = 400 V, f = 1.0 MHz 27
GS
c
39
--24
= 5.0 A, VDS = 400 V,
I
V
GS
= 10 V
D
see fig. 6 and 13
b
-10-
V
= 250 V, ID = 5.0 A,
DD
Rg = 14 Ω, RD = 49 Ω, see fig. 10
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IS = 5.0 A, VGS = 0 V
D
G
S
b
TJ = 25 °C, IF = 5.0 A, dI/dt = 100 A/μs
b
-21-
--5.0
--20
--
-
b
-
430 650 ns
1.62 2.4 μC
1.5 V
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
while VDS is rising from 0 % to 80 % VDS.
oss
V
V/°C
μA
S
pF
nC Gate-Source Charge Q
ns
A
www.vishay.com Document Number: 91061
2 S11-0507-Rev. C, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF830A, SiHF830A
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics
Vishay Siliconix
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
Document Number: 91061 www.vishay.com
S11-0507-Rev. C, 21-Mar-11 3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 4 - Normalized On-Resistance vs. Temperature
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