Vishay IRF820S, SiHF820S Data Sheet

N-Channel MOSFET

G

D

S

Power MOSFET

IRF820S, SiHF820S

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 500

()V

R

DS(on)

Q

(Max.) (nC) 24

g

Q

(nC) 3.3

gs

Q

(nC) 13

gd

Configuration Single

D2PAK (TO-263)

= 10 V 3.0

GS

FEATURES

• Halogen-free According to IEC 61249-2-21
Definition

• Surface Mount

• Available in Tape and Reel

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

•Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.

2

The D

PAK (TO-263) is a surface mount power package

capable of accommodating die size up to HEX-4. It provides

D

G

S

the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The

2

D

PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.

ORDERING INFORMATION

Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263)
Lead (Pb)-free and Halogen-free SiHF820S-GE3 SiHF820STRL-GE3

Lead (Pb)-free

Note

a. See device orientation.

IRF820SPbF IRF820STRLPbF
SiHF820S-E3 SiHF820STL-E3

a

SiHF820STRR-GE3a

a

IRF820STRRPbFa

a

SiHF820STR-E3

a

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V
Gate-Source Voltage V

= 25 °C

T

Continuous Drain Current V

Pulsed Drain Current

a

at 10 V

GS

C

T

= 100 °C 1.6

C

DS

± 20

GS

I

D

IDM 8.0
Linear Derating Factor 0.40
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Avalanche Current

a

Repetitive Avalanche Energy
Maximum Power Dissipation T
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T

e

b

a

= 25 °C

e

c

C

TA = 25 °C 3.1

E

AS

I

AR

E

AR

P

D

dV/dt 3.5 V/ns

, T

J

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

= 50 V, starting TJ = 25 °C, L = 60 mH, Rg = 25 , IAS = 2.5 A (see fig. 12).

b. V

DD

c. ISD  2.5 A, dI/dt  50 A/μs, VDD  VDS, TJ  150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91060

www.vishay.com

S11-1049-Rev. C, 30-May-11 1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

500

2.5

0.025
210 mJ

2.5 A

5.0 mJ
50

- 55 to + 150

d

www.vishay.com/doc?91000

V

A

W/°C

W

°C

IRF820S, SiHF820S

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Ambient
(PCB Mount)

a

Maximum Junction-to-Case (Drain) R

R

thJA

thJA

thJC

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.59 - V/°C

V

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

Internal Source Inductance L

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.

www.vishay.com Document Number: 91060
2 S11-1049-Rev. C, 30-May-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

DS

GS(th)

V

GSS

DSS

VGS = 10 V ID = 1.5 A

DS(on)

fs

iss

-92-

oss

-37-

rss

g

--3.3

gs

--13

gd

d(on)

r

-33-

d(off)

-16-

f

D

V

V

GS

R

Between lead,
6 mm (0.25") from
package and center of

S

S

die contact

MOSFET symbol
showing the
integral reverse

I

SM

SD

rr

rr

on

p - n junction diode

TJ = 25 °C, IF = 2.1 A, dI/dt = 100 A/μs

This document is subject to change without notice.

-62

-40

°C/W

-2.5

VGS = 0, ID = 250 μA 500 - - V

VDS = VGS, ID = 250 μA 2.0 - 4.0 V

= ± 20 V - - ± 100 nA

GS

VDS = 500 V, VGS = 0 V - - 25

= 400 V, VGS = 0 V, TJ = 125 °C - - 250

DS

VDS = 50 V, ID = 1.5 A

VGS = 0 V,

V

= 25 V,

DS

f = 1.0 MHz, see fig. 5

b

b

--3.0

1.5 - - S

- 360 -

--24

= 2.1 A, VDS = 400 V,

I

= 10 V

D

see fig. 6 and 13

b

-8.0-

V

= 250 V, ID = 2.1 A,

DD

= 18 , RD = 100 , see fig. 10

g

G

G

TJ = 25 °C, IS = 2.5 A, VGS = 0 V

b

D

S

D

S

b

-8.6-

-4.5-

-7.5-

--2.5

--8.0

--1.6V

- 260 520 ns

b

- 0.70 1.4 μC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

www.vishay.com/doc?91000

μA

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

A

91060_01

Bottom

To p

V

GS

15 V
10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width
T

C

= 25 °C

4.5 V

VDS, Drain-to-Source Voltage (V)

I

D

, Drain Current (A)

10

0

10

1

10

0

10

-1

10

0

10

-1

10

0

10

1

V

DS

,

Drain-to-Source Voltage (V)

I

D

, Drain Current (A)

Bottom

To p

V

GS

15 V
10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width
T

C

= 150 °C

91060_02

4.5 V

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

IRF820S, SiHF820S

Vishay Siliconix

150 °C

Fig. 1 - Typical Output Characteristics, TC = 25 °C

0

10

, Drain Current (A)

D

I

-1

10

91060_03

3.0

2.5

2.0

1.5

(Normalized)

1.0

25 °C

20 µs Pulse Width
V

= 50 V

DS

4

5678910

V

Gate-to-Source Voltage (V)

,

GS

Fig. 3 - Typical Transfer Characteristics

I

= 2.1 A

D

= 10 V

V

GS

, Drain-to-Source On Resistance

0.5

DS(on)

0.0

R

- 60 - 40 - 20 0 20 40 60 80 100 120 140 160

T

Junction Temperature (°C)

91060_04

Fig. 2 - Typical Output Characteristics, T

= 150 °C

C

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91060 www.vishay.com
S11-1049-Rev. C, 30-May-11 3

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This document is subject to change without notice.

,

J

www.vishay.com/doc?91000