Vishay IRF820A, SiHF820A Data Sheet

TO-220AB

Power MOSFET

IRF820A, SiHF820A

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 500

(Ω)V

DS(on)

(Max.) (nC) 17

(nC) 4.3

(nC) 8.5

Configuration Single

= 10 V 3.0

FEATURES

• Low Gate Charge Qg Results in Simple Drive Requirement

• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

• Fully Characterized Capacitance and Avalanche Voltage and current

• Effective C

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptable Power Supply

• High Speed Power Switching

TYPICAL SMPS TOPOLOGIES

N-Channel MOSFET

• Two Transistor Forward

• Half bridge

• Full bridge

ORDERING INFORMATION

Package TO-220AB

Lead (Pb)-free

SnPb

IRF820APbF SiHF820A-E3 IRF820A SiHF820A

Specified

oss

Available

RoHS*

COMPLIANT

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V Gate-Source Voltage V

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

at 10 V

= 100 °C 1.6

± 30

IDM 10 Linear Derating Factor 0.40 W/°C Single Pulse Avalanche Energy Repetitive Avalanche Current Repetitive Avalanche Energy Maximum Power Dissipation T Peak Diode Recovery dV/dt Operating Junction and Storage Temperature Range T

= 25 °C P

dV/dt 3.4 V/ns

, T

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting T c. I

d. 1.6 mm from case.

= 25 °C, L = 45 mH, Rg = 25 Ω, IAS = 2.5 A (see fig. 12).

≤ 2.5 A, dI/dt ≤ 270 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91057 www.vishay.com S11-0507-Rev. B, 21-Mar-11 1

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

500

2.5

140 mJ

2.5 A

5.0 mJ 50 W

- 55 to + 150

10 lbf · in

1.1 N · m

www.vishay.com/doc?91000

°C

IRF820A, SiHF820A

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

-62

0.50 -

-2.5

°C/WCase-to-Sink, Flat, Greased Surface R

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.60 -

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

GS(th)

GSS

DSS

DS(on)

Dynamic

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Output Capacitance C

Effective Output Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

iss

-53-

oss

-2.7-

rss

oss

eff. VGS = 0 V; VDS = 0 V to 400 V

oss

--4.3

--8.5

d(on)

-16-

d(off)

-13-

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

MOSFET symbol showing the integral reverse p - n junction diode

TJ = 25 °C, IF = 2.5 A, dI/dt = 100 A/μs

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %. c. C

eff. is a fixed capacitance that gives the same charging time as C

oss

VGS = 0 V, ID = 250 μA 500 - -

VDS = VGS, ID = 250 μA 2.0 -

= ± 30 V - - ± 100 nA

4.5 V

VDS = 500 V, VGS = 0 V - - 25

= 400 V, VGS = 0 V, TJ = 125 °C - - 250

= 10 V ID = 1.5 A

VDS = 50 V, ID = 1.5 A

VGS = 0 V,

= 25 V,

f = 1.0 MHz, see fig. 5

= 0 V; VDS = 1.0 V, f = 1.0 MHz 490

= 0 V; VDS = 400 V, f = 1.0 MHz 15

--3.0Ω

1.4 - - S

- 340 -

--17

= 2.5 A, VDS = 400 V,

= 10 V

see fig. 6 and 13

-8.1-

= 250 V, ID = 2.5 A,

= 21 Ω, RD = 97 Ω, see fig. 10

-12-

--2.5

--10

TJ = 25 °C, IS = 2.5 A, VGS = 0 V

--1.6V

- 330 500 ns

- 760 1140 nC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

while VDS is rising from 0 % to 80 % VDS.

oss

V/°C

μA

nC Gate-Source Charge Q

www.vishay.com Document Number: 91057 2 S11-0507-Rev. B, 21-Mar-11

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

91057_01

Bottom

To p

15 V 10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width T

= 25 °C

4.5 V

VDS, Drain-to-Source Voltage (V)

, Drain-to-Source Current (A)

10 10

0.1

-2

0.1

20 µs Pulse Width V

= 50 V

-2

, Drain-to-Source Current (A)

Gate-to-Source Voltage (V)

5.0 6.0 7.0 8.0 9.0

4.0

91057_03

TJ = 25 °C

TJ = 150 °C

0.1

IRF820A, SiHF820A

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Vishay Siliconix

Fig. 3 - Typical Transfer Characteristics

, Drain-to-Source Current (A)

0.1

91057_02

Fig. 2 - Typical Output Characteristics, T

To p

Bottom

15 V 10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

101

Drain-to-Source Voltage (V)

4.5 V

20 µs Pulse Width

= 150 °C

3.0 I

= 2.5 A

= 10 V

2.5

2.0

1.5

(Normalized)

1.0

, Drain-to-Source On Resistance

0.5

DS(on)

0.0

91057_04

- 60 - 40 - 20 0 20 40 60 80 100 120 140 160

Junction Temperature (°C)

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91057 www.vishay.com S11-0507-Rev. B, 21-Mar-11 3

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

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