Vishay IRF740LC, SiHF740LC Data Sheet

TO-220AB

G

D

S

Power MOSFET

IRF740LC, SiHF740LC

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 400

(Ω)V

R

DS(on)

Q

(Max.) (nC) 39

g

Q

(nC) 10

gs

Q

(nC) 19

gd

Configuration Single

= 10 V 0.55

GS

D

FEATURES

• Ultra Low Gate Charge

• Reduced Gate Drive Requirement

• Enhanced 30 V V

• Reduced C

• Extremely High Frequency Operation

• Repetitive Avalanche Rated

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

This new series of low charge Power MOSFETs achieve
significantly lower gate charge over conventional MOSFETs.
Utilizing the new LCDMOS technology, the device

G

improvements are achieved without added product cost,
allowing for reduced gate drive requirements and total
system savings. In addition, reduced switching losses and
improved efficiency are achievable in a variety of high

S

N-Channel MOSFET

frequency applications. Frequencies of a few MHz at high
current are possible using the new Low Charge MOSFETs.

These device improvements combined with the proven
ruggedness and reliability that are characteristic of Power
MOSFETs ofter the designer a new standard in power
transistors for switching applications.

ORDERING INFORMATION

Package TO-220AB

Lead (Pb)-free

SnPb

IRF740LCPbF
SiHF740LC-E3
IRF740LC
SiHF740LC

iss

, C

GS

oss

Rating

, C

rss

Available

RoHS*

COMPLIANT

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V
Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

a

at 10 V

GS

C

= 100 °C 6.3

T

C

DS

± 30

GS

I

D

IDM 32
Linear Derating Factor 1.0 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt

b

a

a

= 25 °C P

c

C

Operating Junction and Storage Temperature Range T

E

AS

I

AR

E

AR

D

dV/dt 4.0 V/ns

, T

J

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V

= 50 V, starting TJ = 25 °C, L = 9.1 mH, Rg = 25 Ω, IAS = 10 A (see fig. 12).

DD

c. I

≤ 10 A, dI/dt ≤ 120 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.

SD

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91053 www.vishay.com
S11-0507-Rev. B, 21-Mar-11 1

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

400

10

520 mJ

10 A
13 mJ

125 W

- 55 to + 150

d

10 lbf · in

1.1 N · m

www.vishay.com/doc?91000

V

A

°C

IRF740LC, SiHF740LC

D

S

G

S

D

G

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

-62

0.50 -

-1.0

°C/WCase-to-Sink, Flat, Greased Surface R

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.76 -

V

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

DS

GS(th)

V

GSS

DSS

V

DS(on)

fs

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

iss

- 190 -

oss

-18-

rss

g

--10

gs

--19

gd

d(on)

r

-25-

d(off)

-20-

f

D

Between lead,
6 mm (0.25") from
package and center of

Internal Source Inductance L

S

die contact

VGS = 0 V, ID = 250 μA 400 - -

VDS = VGS, ID = 250 μA 2.0 -

= ± 20 V - -

GS

VDS = 400 V, VGS = 0 V - -

= 320 V, VGS = 0 V, TJ = 125 °C - -

V

DS

= 10 V ID = 6.0 A

GS

VDS = 50 V, ID = 6.0 A

VGS = 0 V,

= 25 V,

V

DS

b

b

--

3.0 - -

- 1100 -

f = 1.0 MHz, see fig. 5

--39

= 10 A, VDS = 320 V

I

V

GS

= 10 V

D

see fig. 6 and 13

b

-11-

= 200 V, ID = 10 A ,

V

DD

R

= 9.1 Ω, RD = 20 Ω, see fig. 10

g

b

-31-

-4.5-

-7.5-

4.0 V

± 100 nA

25

250

0.55 Ω

V

V/°C

μA

S

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

S

MOSFET symbol
showing the
integral reverse

I

SM

SD

rr

rr

on

p - n junction diode

TJ = 25 °C, IS = 10 A, VGS = 0 V

b

TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μs

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

--10

--32

--

-

b

380 570 ns

-

2.8 4.2 μC

A

2.0 V

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.

www.vishay.com Document Number: 91053
2 S11-0507-Rev. B, 21-Mar-11

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

10

1

10

0

10

-1

10

0

10

1

V

DS

,

Drain-to-Source Voltage (V)

I

D

, Drain Current (A)

Bottom

To p

V

GS

15 V
10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width
T

C

= 150 °C

91053_02

4.5 V

10

-2

10

-2

10

-1

IRF740LC, SiHF740LC

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

V

To p

1

10

0

10

Bottom

, Drain Current (A)

-1

10

D

I

-2

10

-2

10

91053_01

Fig. 1 - Typical Output Characteristics, TC = 25 °C

GS

15 V
10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width

= 25 °C

T

C

-1

10

0

10

10

VDS, Drain-to-Source Voltage (V)

4.5 V

1

91053_03

1

10

150 °C

0

10

25 °C

-1

10

, Drain Current (A)

D

I

-2

10

4

5678910

V

Gate-to-Source Voltage (V)

,

GS

Fig. 3 - Typical Transfer Characteristics

Vishay Siliconix

20 µs Pulse Width

= 50 V

V

DS

3.0
I

= 10 A

D

= 10 V

V

GS

2.5

2.0

1.5

(Normalized)

1.0

, Drain-to-Source On Resistance

0.5

DS(on)

0.0

R

- 60 - 40 - 20 0 20 40 60 80 100 120 140 160

T

Junction Temperature (°C)

91053_04

Fig. 2 - Typical Output Characteristics, T

= 150 °C

C

Fig. 4 - Normalized On-Resistance vs. Temperature

,

J

Document Number: 91053 www.vishay.com
S11-0507-Rev. B, 21-Mar-11 3

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000