Vishay IRF740AS, SiHF740AS, IRF740AL, SiHF740AL Data Sheet

D2PAK (TO-263)

G

D

S

I2PAK (TO-262)

G

D

S

IRF740AS, SiHF740AS, IRF740AL, SiHF740AL

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V) 400

R

()V

DS(on)

Q

(Max.) (nC) 36

g

Q

(nC) 9.9

gs

Q

(nC) 16

gd

Configuration Single

= 10 V 0.55

GS

D

FEATURES

• Halogen-free According to IEC 61249-2-21
Definition

• Low Gate Charge Q
Requirement

• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness

• Fully Characterized Capacitance and
Avalanche Voltage and Current

• Effective C

specified

oss

Results in Simple Drive

g

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Switch Mode Power Supply (SMPS)

G

• Uninterruptible Power Supply

• High speed Power Switching

TYPICAL SMPS TOPOLOGIES

S

N-Channel MOSFET

• Single Transistor Flyback Xfmr. Reset

• Single Transistor Forward Xfmr. Reset (Both for US Line
Input Only)

ORDERING INFORMATION

Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262)

Lead (Pb)-free and Halogen-free SiHF740AS-GE3 SiHF740ASTRL-GE3

Lead (Pb)-free

IRF740ASPbF IRF740ASTRLPbF

SiHF740AS-E3 SiHF740ASTL-E3

Note

a. See device orientation.

a

SiHF740ASTRR-GE3aSiHF740AL-GE3

a

IRF740ASTRRPbF

a

SiHF740ASTR-E3

a

a

IRF740ALPbF

SiHF740AL-E3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V
Gate-Source Voltage V

= 25 °C

T

Continuous Drain Current

Pulsed Drain Current

a, e

e

VGS at 10 V

C

= 100 °C 6.3

C

DS

± 30

GS

I

D

IDM 40

Linear Derating Factor 1.0 W/°C

c, e

b, e

a

= 25 °C

T

A

T

= 25 °C 125

C

E

AS

I

AR

E

AR

P

D

dV/dt 5.9 V/ns

, T

J

stg

Single Pulse Avalanche Energy
Avalanche Current

a

Repetiitive Avalanche Energy

Maximum Power Dissipation

Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak Temperature) for 10 s 300

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I

SD

d. 1.6 mm from case.

= 25 °C, L = 12.6 mH, Rg = 25 , IAS = 10 A (see fig. 12).

J

 10 A, dI/dt  330 A/μs, VDD  VDS, TJ  150 °C.

e. Uses IRF740A, SiHF740A data and test conditions.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91052
S11-1048-Rev. C, 30-May-11 1

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

400

10

630 mJ

10 A

12.5 mJ

3.1

- 55 to + 150

d

www.vishay.com/doc?91000

V

AT

W

°C

IRF740AS, SiHF740AS, IRF740AL, SiHF740AL

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient (PCB
Mounted, Steady-State)

a

Maximum Junction-to-Case (Drain) R

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Output Capacitance C

Effective Output Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. C

eff. is a fixed capacitance that gives the same charging time as C

oss

d. Uses IRF740A, SiHF740A data and test conditions.

www.vishay.com Document Number: 91052
2 S11-1048-Rev. C, 30-May-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

a

R

thJA

thJC

DS

GS(th)

V

GSS

-40

-1.0

VGS = 0, ID = 250 μA 400 - - V

d

-0.48-V/°C

VDS = VGS, ID = 250 μA 2.0 - 4.0 V

= ± 30 V - - ± 100 nA

GS

VDS = 400 V, VGS = 0 V - - 25

DSS

VGS = 10 V ID = 6.0 A

DS(on)

fs

iss

- 170 -

oss

-7.7-

rss

oss

eff. VDS = 0 V to 320 V

oss

g

--9.9

gs

--16

gd

d(on)

r

-24-

d(off)

-22-

f

S

I

SM

SD

rr

rr

on

V

= 320 V, VGS = 0 V, TJ = 125 °C - - 250

DS

VDS = 50 V, ID = 6.0 A

f = 1.0 MHz, see fig. 5

V

= 0 V

GS

b

d

VGS = 0 V,

V

= 25 V,

DS

V

= 1.0 V, f = 1.0 MHz - 1490 -

DS

= 320 V, f = 1.0 MHz - 52 -

V

DS

d

c, d

- - 0.55 

4.9 - - S

- 1030 -

-61-

--36

= 10 A, VDS = 320 V,

I

V

GS

= 10 V

D

see fig. 6 and 13

b, d

-10-

V

= 200 V, ID = 10 A,

R

DD

= 10 , RD = 19.5 , see fig. 10

g

MOSFET symbol
showing the
integral reverse
p - n junction diode

TJ = 25 °C, IS = 10 A, VGS = 0 V

G

b

TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μs

b, d

D

S

b, d

-35-

--10

--40

--2.0V

- 240 360 ns

-1.92.9μC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

while VDS is rising from 0 to 80 % VDS.

oss

This document is subject to change without notice.

www.vishay.com/doc?91000

°C/W

μA

pF

nC Gate-Source Charge Q

ns

A

91052_01

Bottom

To p

V

GS

15 V
10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width
T

J

= 25 °C

4.5 V

VDS, Drain-to-Source Voltage (V)

I

D

, Drain-to-Source Current (A)

10

2

0.1

10

-2

1

10

1100.1

10

2

V

DS

,

Drain-to-Source Voltage (V)

I

D

, Drain-to-Source Current (A)

Bottom

To p

V

GS

15 V
10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width
T

J

= 150 °C

91052_02

4.5 V

10

2

0.1

1

10

1100.1

10

2

IRF740AS, SiHF740AS, IRF740AL, SiHF740AL

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

91052_03

Fig. 1 - Typical Output Characteristics

2

10

10

TJ = 150 °C

1

TJ = 25 °C

, Drain-to-Source Current (A)

D

I

0.1

4.0

5.0 6.0 7.0 8.0 9.0 10.0

V

Gate-to-Source Voltage (V)

,

GS

Fig. 3 - Typical Transfer Characteristics

Vishay Siliconix

20 µs Pulse Width
V

= 50 V

DS

Document Number: 91052 www.vishay.com
S11-1048-Rev. C, 30-May-11 3

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 2 - Typical Output Characteristics

3.0
I

= 10 A

D

= 10 V

V

GS

2.5

2.0

1.5

(Normalized)

1.0

, Drain-to-Source On Resistance

0.5

DS(on)

0.0

R

- 60 - 40 - 20 0 20 40 60 80 100 120 140 160

T

Junction Temperature (°C)

91052_04

,

J

Fig. 4 - Normalized On-Resistance vs. Temperature

This document is subject to change without notice.

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