Vishay IRF640S, SiHF640S, SiHF640L Data Sheet
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N-Channel MOSFET
G
D
S
D2PAK (TO-263)
G
D
S
I2PAK (TO-262)
G
D
S
IRF640S, SiHF640S, SiHF640L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) 200
R
()V
DS(on)
Q
max. (nC) 70
g
Q
(nC) 13
gs
Q
(nC) 39
gd
Configuration Single
= 10 V 0.18
GS
FEATURES
• Surface mount
• Low-profile through-hole
• Available in tape and reel
Available
• Dynamic dV/dt rating
• 150 °C operating temperature
Available
• Fast switching
• Fully avalanche rated
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
*
Thi s datasheet pro vi des information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combinations of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK is a surface mount power package capable of
accommodating die size up to HEX-4. It provides the
highest power capability and the last lowest possible
on-resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application. The
through-hole version (SiHF640L) is available for low-profile
applications.
ORDERING INFORMATION
Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262)
Lead (Pb)-free and Halogen-free SiHF640S-GE3 SiHF640STRL-GE3
Lead (Pb)-free IRF640SPbF IRF640STRLPbF
Note
a. See device orientation.
a
SiHF640STRR-GE3
a
IRF640STRRPbF
a
a
SiHF640L-GE3
-
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
a, e
at 10 V
GS
C
= 100 °C 11
C
DS
± 20
GS
I
D
IDM 72
Linear Derating Factor 1.0 W/°C
c, e
b, e
a
T
= 25 °C
C
= 25 °C 3.1
T
A
Single Pulse Avalanche Energy
Avalanche Current
a
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak temperature)
d
for 10 s 300
E
AS
I
AR
E
AR
P
D
dV/dt 5.0 V/ns
, T
J
stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 50 V, starting TJ = 25 °C, L = 2.7 mH, Rg = 25 , IAS = 18 A (see fig. 12).
DD
c. I
18 A, dI/dt 150 A/μs, VDD VDS, TJ 150 °C.
SD
d. 1.6 mm from case.
e. Uses IRF640, SiHF640 data and test conditions.
S16-0014-Rev. E, 18-Jan-16
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: hvm@vishay.com
1
200
18
580 mJ
18 A
13 mJ
130
-55 to +150
Document Number: 91037
V
AT
W
°C
IRF640S, SiHF640S, SiHF640L
S
D
G
www.vishay.com
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient
(PCB mounted, steady-state)
a
Maximum Junction-to-Case (Drain) R
R
thJA
thJC
-40
-1.0
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
V
Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
DS
GS(th)
V
GSS
DSS
VGS = 10 V ID = 11 A
DS(on)
fs
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Gate Input Resistance R
iss
- 430 -
oss
- 130 -
rss
g
--13
gs
--39
gd
d(on)
r
-45-
d(off)
-36-
f
g
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
S
I
SM
SD
rr
rr
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IF = 18 A, dI/dt = 100 A/μs
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. Uses IRF640/SiHF640 data and test conditions.
VGS = 0 V, ID = 250 μA 200 - - V
c
VDS = VGS, ID = 250 μA 2.0 - 4.0 V
= ± 20 V - - ± 100 nA
GS
VDS = 200 V, VGS = 0 V - - 25
= 160 V, VGS = 0 V, TJ = 125 °C - - 250
V
DS
VDS = 50 V, ID = 11 A
b
d
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
= 18 A, VDS = 160 V,
I
V
= 10 V
GS
V
R
= 9.1 , RD = 5.4 , see fig. 10
g
D
see fig. 6 and 13
= 100 V, ID = 18 A,
DD
d
b, c
b, c
f = 1 MHz, open drain 0.5 - 3.6
TJ = 25 °C, IS = 18 A, VGS = 0 V
b
b, c
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Vishay Siliconix
°C/W
-0.29-V/°C
- - 0.18
6.7 - - S
- 1300 -
--70
-14-
-51-
--18
--72
--2.0V
- 300 610 ns
-3.47.1μC
μA
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
A
S16-0014-Rev. E, 18-Jan-16
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: hvm@vishay.com
2
Document Number: 91037
IRF640S, SiHF640S, SiHF640L
I
D
= 18 A
V
GS
= 10 V
3.0
0.0
0.5
1.0
1.5
2.0
2.5
T
J
,
Junction Temperature (°C)
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
91037_04
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
3000
2500
2000
1500
0
500
1000
10
0
10
1
Capacitance (pF)
V
DS
,
Drain-to-Source Voltage (V)
C
iss
C
rss
C
oss
V
GS
= 0 V, f = 1 MHz
C
iss
= Cgs + Cgd, Cds Shorted
C
rss
= C
gd
C
oss
= Cds + C
gd
91037_05
QG, Total Gate Charge (nC)
V
GS
, Gate-to-Source Voltage (V)
20
16
12
8
0
4
0
15
75
6045
30
V
DS
= 40 V
V
DS
= 100 V
For test circuit
see figure 13
V
DS
= 160 V
91037_06
ID = 18 A
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
V
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
20 µs Pulse Width
= 25 °C
T
C
0
10
1
10
VDS, Drain-to-Source Voltage (V)
4.5 V
1
10
, Drain Current (A)
D
0
I
10
10
91037_01
To p
Bottom
-1
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TJ = 25 °C
V
To p
1
10
Bottom
, Drain Current (A)
D
0
I
10
-1
10
91037_02
Fig. 2 - Typical Output Characteristics, T
1
10
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
0
10
V
Drain-to-Source Voltage (V)
,
DS
150 °C
4.5 V
20 µs Pulse Width
= 150 °C
T
C
1
10
= 175 °C
J
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
, Drain Current (A)
D
I
91037_03
S16-0014-Rev. E, 18-Jan-16
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
25 °C
0
10
10
-1
4
5678910
V
Gate-to-Source Voltage (V)
,
GS
20 µs Pulse Width
V
= 50 V
DS
Fig. 3 - Typical Transfer Characteristics
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: hvm@vishay.com
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
3
Document Number: 91037
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