Vishay IRF630S, SiHF630S Data Sheet

K

D2PAK (TO-263)

S

D

G

Power MOSFET

IRF630S, SiHF630S

Vishay Siliconix

Note

a. See device orientation.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91032
S11-1047-Rev. C, 30-May-11 1

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

PRODUCT SUMMARY

VDS (V) 200

R

()V

DS(on)

Q

(Max.) (nC) 43

g

Q

(nC) 7.0

gs

Q

(nC) 23

gd

Configuration Single

= 10 V 0.40

GS

FEATURES

• Halogen-free According to IEC 61249-2-21
Definition

• Surface Mount

• Available in Tape and Reel

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

•Fast Switching

• Ease of Paralleling

D

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

G

designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.

2

PAK is a surface mount power package capable of

S

N-Channel MOSFET

The D
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The

2

PAK is suitable for high current applications because of

D
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application.

ORDERING INFORMATION

Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263)

Lead (Pb)-free and Halogen-free SiHF630S-GE3 SiHF630STRL-GE3

Lead (Pb)-free

IRF630SPbF IRF630STRLPbF

SiHF630S-E3 SiHF630STL-E3

a

a

a

SiHF630STRR-GE3

IRF630STRRPbF

SiHF630STR-E3

a

a

a

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

= 25 °C

T

Continuous Drain Current V

Pulsed Drain Current

a

at 10 V

GS

C

= 100 °C 5.7

C

DS

± 20

GS

I

D

IDM 36

Linear Derating Factor 0.59

Linear Derating Factor (PCB Mount)

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation T

Maximum Power Dissipation (PCB Mount)

Peak Diode Recovery dV/dt

e

b

a

a

= 25 °C

C

e

c

TA = 25 °C 3.0

E

AS

I

AR

E

AR

P

D

dV/dt 5.0 V/ns

200

9.0

0.025

W/°C

250 mJ

9.0 A

7.4 mJ

74

V

AT

W

www.vishay.com

This document is subject to change without notice.

www.vishay.com/doc?91000

IRF630S, SiHF630S

Vishay Siliconix

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Operating Junction and Storage Temperature Range T

Soldering Recommendations (Peak Temperature) for 10 s 300

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V

= 50 V, starting TJ = 25 °C, L = 4.6 mH, Rg = 25 , IAS = 9.0 A (see fig. 12).

DD

c. I

 9.0 A, dI/dt  120 A/μs, VDD  VDS, TJ  150 °C.

SD

d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).

.

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL MIN. TYP. MAX. UNIT

Maximum Junction-to-Ambient
(PCB Mount)

c

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain)

R

thJA

thJA

R

thJC

--40

--62

--1.7

, T

J

stg

- 55 to + 150

d

°C/W

°C

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient

V

DS

V

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

Internal Source Inductance L

DS

DS/TJ

GS(th)

V

GSS

DSS

V

DS(on)

fs

iss

-240-

oss

-76-

rss

g

--7.0

gs

--23

gd

d(on)

r

-39-

d(off)

-20-

f

D

V

Between lead,
6 mm (0.25") from
package and center of

S

die contact

VGS = 0, ID = 250 μA 200 - - V

Reference to 25 °C, I

= 1 mA

D

-0.24-

VDS = VGS, ID = 250 μA 2.0 - 4.0 V

= ± 20 V - - ± 100 nA

GS

VDS = 200 V, VGS = 0 V - - 25

V

= 160V, VGS = 0 V, TJ = 125 °C - - 250

DS

= 10 V ID = 5.4 A

GS

VDS = 50 V, ID = 5.4 A

VGS = 0 V,

V

= 25 V,

DS

f = 1.0 MHz, see fig. 5

b

b

- - 0.40 

3.8 - - S

-800-

--43

= 5.9 A, VDS = 160 V

I

= 10 V

GS

D

see fig. 6 and 13

b

-9.4-

= 100 V, ID = 5.9 A

V

DD

R

= 12 , RD= 16 

g

see fig. 10

b

D

G

S

-28-

-4.5-

-7.5-

V/°C

μA

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

www.vishay.com Document Number: 91032
2 S11-1047-Rev. C, 30-May-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

S

D

G

IRF630S, SiHF630S

Vishay Siliconix

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

S

MOSFET symbol
showing the
integral reverse

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

I

SM

SD

rr

rr

on

p - n junction diode

TJ = 25 °C, IS = 9.0 A, VGS = 0 V

TJ = 25 °C, IF = 5.9 A,

dI/dt = 100 A/μs

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. When mounted on 1" square PCB (FR-4 or G-10 material).

b

b

--9.0

--36

--2.0V

- 170 340 ns

-1.12.2μC

A

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

V

To p

1

10

Bottom

0

10

, Drain Current (A)

D

I

-1

10

-1

10

91032_01

Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 2 - Typical Output Characteristics, TC = 150 °C

GS

15 V
10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width

= 25 °C

T

C

0

10

1

10

VDS, Drain-to-Source Voltage (V)

4.5 V

91032_02

To p

1

10

Bottom

0

10

, Drain Current (A)

D

I

-1

10

-1

10

V

GS

15 V
10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

0

10

V

Drain-to-Source Voltage (V)

,

DS

4.5 V

20 µs Pulse Width

= 150 °C

T

C

1

10

Document Number: 91032 www.vishay.com
S11-1047-Rev. C, 30-May-11 3

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000