Vishay IRF624, SiHF624 Data Sheet
TO-220AB
G
D
S
Available
RoHS*
COMPLIANT
Power MOSFET
IRF624, SiHF624
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 250
(Ω)V
R
DS(on)
Q
(Max.) (nC) 14
g
(nC) 2.7
Q
gs
Q
(nC) 7.8
gd
Configuration Single
= 10 V 1.1
GS
D
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
•Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
G
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
S
N-Channel MOSFET
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
ORDERING INFORMATION
Package TO-220AB
Lead (Pb)-free
SnPb
IRF624PbF
SiHF624-E3
IRF624
SiHF624
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
= 25 °C
T
Continuous Drain Current V
Pulsed Drain Current
a
at 10 V
GS
C
= 100 °C 2.8
C
DS
± 20
GS
I
D
IDM 14
Linear Derating Factor 0.40 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
b
a
a
= 25 °C P
c
C
E
AS
I
AR
E
AR
D
dV/dt 4.8 V/ns
, T
J
stg
Soldering Recommendations (Peak Temperature) for 10 s 300
Mounting Torque 6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 50 V, starting TJ = 25 °C, L = 8.3 mH, Rg = 25 Ω, IAS = 4.4 A (see fig. 12).
DD
c. I
≤ 4.4 A, dI/dt ≤ 90 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
SD
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91029 www.vishay.com
S11-0509-Rev. B, 21-Mar-11 1
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
250
4.4
100 mJ
4.4 A
5.0 mJ
50 W
- 55 to + 150
d
10 lbf · in
1.1 N · m
www.vishay.com/doc?91000
V
AT
°C
IRF624, SiHF624
D
S
G
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Maximum Junction-to-Case (Drain) R
thJA
thCS
thJC
-62
0.50 -
-2.5
°C/WCase-to-Sink, Flat, Greased Surface R
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.36 -
V
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
DS
GS(th)
V
GSS
DSS
V
DS(on)
fs
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
iss
-77-
oss
-15-
rss
g
--2.7
gs
--7.8
gd
d(on)
r
-20-
d(off)
-12-
f
D
Between lead,
6 mm (0.25") from
package and center of
Internal Source Inductance L
S
die contact
VGS = 0 V, ID = 250 μA 250 - -
VDS = VGS, ID = 250 μA 2.0 - 4.0 V
= ± 20 V - - ± 100 nA
GS
VDS = 250 V, VGS = 0 V - - 25
V
= 200 V, VGS = 0 V, TJ = 125 °C - - 250
DS
= 10 V ID = 2.6 A
GS
VDS = 50 V, ID = 2.6 A
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
b
b
--1.1Ω
1.5 - - S
- 260 -
--14
= 4.4 A, VDS = 200 V,
I
V
GS
= 10 V
D
see fig. 6 and 13
b
-7.0-
V
= 125 V, ID = 4.4 A,
DD
R
= 18 Ω, RD = 28 Ω, see fig. 10
g
b
-13-
-4.5-
-7.5-
V
V/°C
μA
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
nH
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
S
I
SM
SD
rr
rr
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IS = 4.4 A, VGS = 0 V
TJ = 25 °C, IF = 4.4 A, dI/dt = 100 A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
D
G
S
b
--4.4
--14
--1.8V
- 200 400 ns
b
A
- 0.93 1.9 μC
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
www.vishay.com Document Number: 91029
2 S11-0509-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
www.vishay.com/doc?91000
10
1
10
0
10
-1
10
0
10
1
V
DS
,
Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
4.5 V
Bottom
To p
V
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
20 µs Pulse Width
T
C
= 150 °C
91029_02
10
-1
I
D
= 4.4 A
V
GS
= 10 V
3.0
0.0
0.5
1.0
1.5
2.0
2.5
T
J
,
Junction Temperature (°C)
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
91029_04
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
IRF624, SiHF624
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
10
0
10
, Drain Current (A)
D
I
-1
10
10
91029_01
Fig. 1 - Typical Output Characteristics, TC = 25 °C
V
To p
Bottom
-1
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
0
10
VDS, Drain-to-Source Voltage (V)
4.5 V
20 µs Pulse Width
= 25 °C
T
C
1
10
, Drain Current (A)
I
91029_03
Vishay Siliconix
1
10
150 °C
0
10
25 °C
D
-1
10
20 µs Pulse Width
= 50 V
V
DS
4
5678910
V
Gate-to-Source Voltage (V)
,
GS
Fig. 3 - Typical Transfer Characteristics
Document Number: 91029 www.vishay.com
S11-0509-Rev. B, 21-Mar-11 3
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 2 - Typical Output Characteristics, T
This datasheet is subject to change without notice.
= 150 °C
C
Fig. 4 - Normalized On-Resistance vs. Temperature
www.vishay.com/doc?91000
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