Vishay SiHB22N60S Data Sheet
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SiHB22N60S
Vishay Siliconix
S Series Power MOSFET
PRODUCT SUMMARY
VDS at TJ max. (V) 650
R
max. at 25 °C (Ω)VGS = 10 V 0.190
DS(on)
Q
max. (nC) 98
g
Q
(nC) 17
gs
Q
(nC) 25
gd
Configuration Single
FEATURES
• Generation one
• High EAR capability
• Lower figure-of-merit R
• 100 % avalanche tested
• Ultra low R
• dV/dt ruggedness
• Ultra low gate charge (Qg)
D2PAK (TO-263)
D
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
G
D
G
S
N-Channel MOSFET
S
• PFC power supply stages
• Hard switching topologies
• Solar inverters
•UPS
• Motor control
• Lighting
• Server telecom
ORDERING INFORMATION
Package D2PAK (TO-263)
Lead (Pb)-free and Halogen-free SiHB22N60S-GE3
Lead (Pb)-free SiHB22N60S-E3
x Q
on
g
on
Available
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
a
at 10 V
GS
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
b
a
Maximum Power Dissipation
Drain-Source Voltage Slope T
Reverse Diode dV/dt
d
C
= 100 °C 13
C
2
D
PAK
(TO-263)
2
D
PAK
(TO-263)
= 125 °C
J
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak Temperature)
c
for 10 s 300
DS
± 30
GS
I
D
IDM 65
E
AS
E
AR
P
D
dV/dt
, T
J
stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. V
= 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 7 A.
DD
c. 1.6 mm from case.
d. I
≤ ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
SD
S15-0982-Rev. F, 27-Apr-15
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
600
22
2W/°C
690
25
250 W
37
5.3
-55 to +150
Document Number: 91395
V
AT
mJ
V/ns
°C
SiHB22N60S
S
D
G
www.vishay.com
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient D
Maximum Junction-to-Case (Drain) D
2
PAK (TO-263) R
2
PAK (TO-263) R
thJA
thJC
-62
-0.5
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
V
Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.70 - V/°C
DS
Gate-Source Threshold Voltage (N) V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance
a
g
DS
GS(th)
V
GSS
DSS
VGS = 10 V ID = 11 A - 0.160 0.190 Ω
DS(on)
fs
Dynamic
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Effective Output Capacitance
(Time Related)
Total Gate Charge Q
iss
- 1480 -
oss
-33-
rss
g
(TR)
a
C
oss eff.
V
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Gate Input Resistance R
-25-
gd
d(on)
r
- 77 115
d(off)
-5990
f
g
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current I
Diode Forward Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q
Reverse Recovery Current I
S
SM
SD
rr
rr
RRM
MOSFET symbol
showing the
integral reverse
p - n junction diode
Note
a. C
(TR) is a fixed capacitance that gives the same charging time as C
oss eff.
VGS = 0 V, ID = 1 mA 600 - - V
VDS = VGS, ID = 250 μA 2.0 - 4.0 V
= ± 20 V - - ± 100 nA
GS
V
= ± 30 V - - ± 1 μA
GS
VDS = 600 V, VGS = 0 V - - 1
= 600 V, VGS = 0 V, TJ = 150 °C - - 100
V
DS
VDS = 50 V, ID = 13 A - 9.4 - S
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz
VGS = 0 V VDS = 0 V to 480 V - 155 -
= 10 V ID = 22 A, VDS = 480 V
GS
= 380 V, ID = 22 A,
V
DD
R
= 9.1 Ω, VGS = 10 V
g
f = 1 MHz, open drain - 0.65 - Ω
TJ = 25 °C, IS = 22 A, VGS = 0 V - - 1.2 V
TJ = 25 °C, IF = IS,
dI/dt = 100 A/μs, V
while VDS is rising from 0 % to 80 % VDS.
oss
= 25 V
R
Vishay Siliconix
°C/W
- 2810 -
- 75 110
-2450
- 68 100
--22
--88
- 462 690 ns
- 8.3 16 μC
-3060A
μA
pF
nC Gate-Source Charge Qgs -17-
ns
A
S15-0982-Rev. F, 27-Apr-15
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: hvm@vishay.com
2
Document Number: 91395
www.vishay.com
VDS, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
0
10
20
30
40
50
04812162024
V
GS
Top 15 V
14 V
13 V
12 V
11 V
10 V
9 V
8 V
7 V
6 V
5 V
Bottom 4 V
TJ = 25 °C
4 V
0
6
12
18
24
30
0 4 8 12162024
4.0 V
VDS, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
V
GS
Top 15 V
14 V
13 V
12 V
11 V
10 V
9 V
8 V
7 V
6 V
5 V
Bottom 4 V
TJ = 150 °C
I
D
, Drain Current (A)
V
GS
,
Gate-to-Source Voltage (V)
0
10
20
30
40
50
60
46810
TJ = 25 °C
TJ = 150 °C
2
0
0.5
1
1.5
2
2.5
3
3.5
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160 180
T
J
,
Junction Temperature (°C)
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 22 A
V
GS
= 10 V
10
100
1000
10 000
100 000
110100
Capacitance (pF)
V
DS
,
Drain-to-Source Voltage (V)
VGS = 0 V, f = 1 MHz
C
iss
= Cgs + Cgd • C
ds
shorted
C
rss
= C
gd
C
oss
= Cds + C
gd
C
rss
C
iss
C
oss
0.0
2.0
4.0
6.0
8.0
10.0
12.0
010203040506070 8090100
V
DS
= 120 V
V
DS
= 300 V
V
DS
= 480 V
ID = 22 A
QG, Total Gate Charge (nC)
V
GS
, Gate-to-Source Voltage (V)
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SiHB22N60S
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TJ = 25 °C
Fig. 2 - Typical Output Characteristics, T
= 150 °C
J
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
S15-0982-Rev. F, 27-Apr-15
Fig. 3 - Typical Transfer Characteristics
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
3
Document Number: 91395
For technical questions, contact: hvm@vishay.com
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