VISHAY SiE832DF Datasheet

SiE832DF

PRODUCT SUMMARY

VDS (V)

0.0055 at V

40

Package Drawing

http://www.vishay.com/doc?73398

0.007 at V

D

r

DS(on)

(Ω)

GS

= 10 V

= 4.5 V

6 7 8 9 10 D S S G D

New Product

N-Channel 40-V (D-S) MOSFET

FEATURES

• TrenchFET® Power MOSFET

• Ultra Low Thermal Resistance Using Top-Exposed PolarPAK Double-Sided Cooling

• Leadframe-Based New Encapsulated Package

- Die Not Exposed

- Same Layout Regardless of Die Size

• Low Q

• 100 % R

gd/Qgs

g

APPLICATIONS

•VRM

• Point-of-Load

• Synchronous Rectification

Silicon

Limit

103

91

PolarPAK

a

(A)

I

D

Package

Limit

67 8 9

50

Qg (Typ)

25 nC

10

D D S G

Vishay Siliconix

®

Package for

Ratio Helps Prevent Shoot-Through

and UIS Tested

D

RoHS

COMPLIANT

D S S G D

5 4 3 2 1

Top View Bottom View

Top surface is connected to pins 1, 5, 6, and 10

Ordering Information: SiE832DF-T1-E3 (Lead (Pb)-free)

1 4 3 2 5

G

S

N-Channel MOSFET

For Related Documents

http://www.vishay.com/ppg?74414

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol

Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

T

= 25 °C

C

= 70 °C

T

C

V

DS

V

GS

I

D

TA = 25 °C TA = 70 °C

Pulsed Drain Current I

= 25 °C

T

Continuous Source-Drain Diode Current

Single Pulse Avalanche Current Avalanche Energy

Maximum Power Dissipation

C

TA = 25 °C

L = 0.1 mH

= 25 °C

T

C

T

= 70 °C 66

C

= 25 °C

T

A

DM

I

S

I

AS

E

AS

P

D

TA = 70 °C

T

Operating Junction and Storage Temperature Range

d, e

Soldering Recommendations (Peak Temperature)

Notes: a. Package limited is 50 A. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 sec. d. See Solder Profile (http://www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

, T

J

stg

Document Number: 74414 S-62483-Rev. A, 04-Dec-06

Limit

40

± 20

103 (Silicon Limit)

a

(Package Limit)

50

23.6

18.9

a

b, c

80

a

50

b, c

4.3 35

61 mJ

104

b, c

5.2

b, c

3.3

- 50 to 150 260

Unit

V

A

W

°C

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SiE832DF

Vishay Siliconix

THERMAL RESISTANCE RATINGS

Parameter Symbol

Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain Top) Maximum Junction-to-Case (Source)

Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 68 °C/W. c. Measured at source pin (on the side of the package).

a, b

a

a, c

t ≤ 10 sec R

Steady State

R

thJA

R

(Drain) 1 1.2

thJC

(Source) 2.8 3.4

thJC

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min Typ Max Unit

Static

V

Drain-Source Breakdown Voltage V

Temperature Coefficient ΔV

V

DS

Temperature Coefficient ΔV

V

GS(th)

Gate-Source Threshold Voltage Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance Output Capacitance Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time

DS

DS /TJ

GS(th) /TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

r

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

a

Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing.

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

V

DS

V

DS

V

DS

I

D

I

D

IF = 10 A, di/dt = 100 A/µs, TJ = 25 °C

= 0 V, ID = 250 µA

GS

VDS = V V

= 0 V, V

DS

V

= 40 V, V

DS

= 40 V, V

≥ 5 V, V

DS

V

GS

V

GS

V

= 15 V, ID = 13.6 A

DS

= 20 V, V

DS

= 20 V, V

V

= 20 V, RL = 2 Ω

DD

≅ 10 A, V

V

= 20 V, RL = 2 Ω

DD

≅ 10 A, V

ID = 250 µA

, ID = 250 µA

GS

= ± 20 V

GS

= 0 V, TJ = 55 °C

GS

= 10 V, ID = 14 A = 4.5 V, ID = 12 A

= 0 V, f = 1 MHz

GS

= 10 V, ID = 20 A

GS

= 4.5 V, ID = 20 A

GS

f = 1 MHz 1.1 1.7 Ω

= 4.5 V, Rg = 1 Ω

GEN

= 10 V, Rg = 1 Ω

GEN

TC = 25 °C

IS = 10 A

Typical Maximum

20 24

40 V

1.5 2.2 3.0 V

= 0 V

= 10 V

25 A

°C/W

43.1

- 6.9

± 100 nA

1

10

0.0046 0.0055

0.0058 0.007 86 S

3800

510 160

51 77 25 38 12

7

45 70

260 400

35 55 55 85 15 25 30 45 35 55 10 15

50 80

0.8 1.2 V 85 130 ns

110 170 nC

64 ns 21

Unit

mV/°C

µA

Ω

pF

nC

ns

A

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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Document Number: 74414

S-62483-Rev. A, 04-Dec-06

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

SiE832DF

Vishay Siliconix

80

VGS = 10 thru 4 V

60

)A( tnerruC niarD -I

40

D

20

0

0.0 0.4 0.8 1.2 1.6 2.0

- Drain-to-Source Voltage (V)

V

DS

Output Characteristics

0.008

0.007

) ( ecnatsiseR-nO

0.006

0.005

-

)no(SD

r

0.004

VGS = 4.5 V

VGS = 10 V

VGS = 3 V

20

16

)A( tnerruC niarD -I

12

TC = 125 °C

8

D

4

0

1.5 2.0 2.5 3.0 3.5 4.0

TC = 25 °C

- Gate-to-Source Voltage (V)

V

GS

Transfer Characteristics

4500

C

oss

3600

)Fp( ecnati

2700

c a pa

1800

C -

C

900

C

rss

C

iss

TC = - 55 °C

0.003 0204060

On-Resistance vs. Drain Current

10

)V( e

g atl

o V ecruoS-ot-etaG

-

SG

V

ID = 20 A

8

6

4

2

0

0102030405060

Qg - Total Gate Charge (nC)

Gate Charge

Document Number: 74414 S-62483-Rev. A, 04-Dec-06

- Drain Current (A)

I

D

VDS = 20 V

VDS = 32 V

0

80

0 8 16 24 32 40

VDS - Drain-to-Source Voltage (V)

Capacitance

1.8

ID = 14 A

1.6

e cn

1.4

a

t

)

sis

dez

eR

i

lamr

1.2

nO

-

o

)

N (

n o(SD

1.0

r

0.8

0.6

- 50 - 25 0 25 50 75 100 125 150

T

J

VGS = 10 V, 4.5 V

- Junction Temperature (°C)

On-Resistance vs. Junction Temperature

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